Abstract:
A high-speed semiconductor transistor and process for forming same. The process includes forming, in a Si substrate ( ), spaced apart shallow trench isolations (STIs) ( ), and a gate ( ) atop the substrate between the STIs. Then, regions ( ) of the substrate on either side of the gate are either amorphized and doped, or just doped. In certain embodiments of the invention, extension regions ( or â) and deep drain and deep source regions ( or â) are formed. In other embodiments, just deep drain and deep source regions ( or â) are formed. A conformal layer ( ) is then formed atop the substrate, covering the substrate surface ( ) and the gate. The conformal layer can serve to absorb light and/or to distribute heat to the underlying structures. Then, at least one of front-side irradiation ( ) and back-side irradiation ( ) is performed to activate the drain and source regions and, if present, the extensions. Explosive recrystallization ( ) is one mechanism used to achieve dopant activation.