Richard K Lai

US Patent:

7239852, Jul 3, 2007

Filed:

Aug 1, 2003

Appl. No.:

10/632683

Inventors:

Jeffrey Ming-Jer Yang - Cerritos CA, US
Matt Nishimoto - Torrance CA, US
Yun-Ho Chung - Redondo Beach CA, US
Michael Battung - Torrance CA, US
Richard Lai - Redondo Beach CA, US

Assignee:

Northrop Grumman Corporation - Los Angeles CA

International Classification:

H04B 1/44

US Classification:

455 78, 4551271, 4551272, 330 54, 330286

Abstract:

A common source, bi-directional microwave amplifier is described. More particularly, the present invention is a microwave, common source, bi-directional amplifier that includes a first amplification path and a second amplification path wherein the signal directional flow is controlled through the selective biasing of the first amplification path and the second amplification path. Each amplification path is designed to optimize desired performance. For signal flow through the first amplification path, the first amplification path is biased-on and the second path is biased-off. For signal flow through the second amplification path, the second amplification path is biased-on and the first path is biased-off.

US Patent:

7411226, Aug 12, 2008

Filed:

Apr 27, 2005

Appl. No.:

11/115938

Inventors:

Yeong-Chang Choug - Irvine CA, US
Ronald Grundbacher - Manhattan Beach CA, US
Po-Hsin Liu - Anaheim CA, US
Denise L. Leung - Manhattan Beach CA, US
Richard Lai - Redondo Beach CA, US

Assignee:

Northrop Grumman Corporation - Los Angeles CA

International Classification:

H01L 31/00
H01L 29/80
H01L 21/28

US Classification:

257192, 257280, 257282, 257283, 438570

Abstract:

An InP high electron mobility transistor (HEMT) structure in which a gate metal stack includes an additional thin layer of a refractory metal, such as molybdenum (Mo) or platinum (Pt) at a junction between the gate metal stack and a Schottky barrier layer in the HEMT structure. The refractory metal layer reduces or eliminates long-term degradation of the Schottky junction between the gate metal and the barrier layer, thereby dramatically improving long-term reliability of InP HEMTs, but without sacrifice in HEMT performance, whether used as a discrete device or in an integrated circuit.

US Patent:

7709860, May 4, 2010

Filed:

Apr 29, 2009

Appl. No.:

12/432113

Inventors:

Linh Dang - Lawndale CA, US
Wayne Yoshida - Hermosa Beach CA, US
Xiaobing Mei - Manhattan Beach CA, US
Jennifer Wang - Redondo Beach CA, US
Po-Hsin Liu - Anaheim CA, US
Jane Lee - Torrance CA, US
Weidong Liu - San Marino CA, US
Michael Barsky - Sherman Oaks CA, US
Richard Lai - Redondo Beach CA, US

Assignee:

Northrop Grumman Space & Mission Systems Corp. - Los Angeles CA

International Classification:

H01L 29/778

US Classification:

257194, 257E29246

Abstract:

In a method of forming a semiconductor device on a semiconductor substrate (), a photoresist layer () is deposited on the semiconductor substrate; a window () is formed in the photoresist layer () by electron beam lithography; a conformal layer () is deposited on the photoresist layer () and in the window (); and substantially all of the conformal layer () is selectively removed from the photoresist layer () and a bottom portion of the window to form dielectric sidewalls () in the window ().

US Patent:

20080111157, May 15, 2008

Filed:

Nov 14, 2006

Appl. No.:

11/598817

Inventors:

Linh Dang - Lawndale CA, US
Wayne Yoshida - Hermosa Beach CA, US
Xiaobing Mei - Manhattan Beach CA, US
Jennifer Wang - Redondo Beach CA, US
Po-Hsin Liu - Anaheim CA, US
Jane Lee - Torrance CA, US
Weidong Liu - San Marino CA, US
Michael Barsky - Sherman Oaks CA, US
Richard Lai - Redondo Beach CA, US

Assignee:

Northrop Grumman Corporation - Los Angeles CA

International Classification:

H01L 29/778
H01L 21/28

US Classification:

257194, 438579, 257E29246, 257E21158

Abstract:

In a method of forming a semiconductor device on a semiconductor substrate (), a photoresist layer () is deposited on the semiconductor substrate; a window () is formed in the photoresist layer () by electron beam lithography; a conformal layer () is deposited on the photoresist layer () and in the window (); and substantially all of the conformal layer () is selectively removed from the photoresist layer () and a bottom portion of the window to form dielectric sidewalls () in the window ().