Ling Chen

US Patent:

7814491, Oct 12, 2010

Filed:

Apr 14, 2004

Appl. No.:

10/824074

Inventors:

Ling Long Chen - Fremont CA, US
Joost Willem Daniel Pronk Van Hoogeveen - Mountain View CA, US
Nils Peder Pedersen - Cascade CO, US
Xuemei Gao - Fremont CA, US
Amol A. Chiplunkar - Bangalore, IN
Harapanahalli Gururaja Rao - Sunnyvale CA, US
John Meldrum Perry - San Jose CA, US
Ross Adam Margo - Fremont CA, US
Estelle Jeanine Chiquet - Elk Grove CA, US

Assignee:

Oracle America, Inc. - Redwood City CA

International Classification:

G06F 9/46
G06F 15/173

US Classification:

718104, 718100, 709226

Abstract:

A method for managing system resources including creating a container, wherein creating the container comprises allocating a first portion of a first resource to the container, associating the container with a resource pool, wherein the resource pool is associated with the first resource, determining whether the first portion of the first resource is valid, and activating the container if the first portion of the first resource is valid.

US Patent:

8156141, Apr 10, 2012

Filed:

Dec 13, 2006

Appl. No.:

11/639038

Inventors:

Igor Shmulevich - San Ramon CA, US
Ling Chen - San Jose CA, US

Assignee:

EMC Corporation - Hopkinton MA

International Classification:

G06F 17/00

US Classification:

707770, 707769, 707803, 709227

Abstract:

Keeping incorporated web page content up to date is disclosed. A web page is associated with a stored object that has been incorporated into the web page, for example an object stored in a repository. The web page is updated automatically based at least in part on an indication that the stored object has been changed.

US Patent:

8212940, Jul 3, 2012

Filed:

Dec 6, 2006

Appl. No.:

11/567211

Inventors:

Dave Xiao Dong Yang - Beijing, CN
Ling Chen - Fremont CA, US
Nien-Tsu Wang - Los Gatos CA, US
Hsi-Chen Wang - San Jose CA, US
Chih-Ching Steve Chou - San Jose CA, US

International Classification:

H04N 5/455
H04N 5/44

US Classification:

348726, 348725, 348555, 348552, 710 62, 710300

Abstract:

A hybrid architecture of a television (TV) receiving system is disclosed. The architecture includes two portions, a hardware portion and a software portion. The hardware portion includes a minimum amount of hardware to achieve operations of receiving a RF signal, producing an IF signal and outputting data representing the IP signal. The software portion, taking advantage of available computing power (e. g. , high-speed microprocessor and a lot of memory) in a computing device and executed therein, includes one or more demodulators, all implemented in software. Each of the demodulators is implemented in accordance with one type of TV standard. Thus depending on the received data, a corresponding demodulator is activated to demodulate the received data and subsequently produces audio and video data. One of the advantages, benefits and objects in the present invention is to have a band of software-based demodulators, any of which may be updated or expanded whenever there is a new TV standard or modification to an existing standard.

US Patent:

8555159, Oct 8, 2013

Filed:

Dec 13, 2006

Appl. No.:

11/638081

Inventors:

Igor Shmulevich - San Ramon CA, US
Gary Tang - Santa Clara CA, US
Ling Chen - San Jose CA, US
Andy Simmons - Montara CA, US

Assignee:

EMC Corporation - Hopkinton MA

International Classification:

G06F 17/00

US Classification:

715255

Abstract:

Facilitating definition of a web page is disclosed. An indication that an external data is to be incorporated into the web page from an external source, such as another web page, is received via an editing interface. The external data is retrieved in real time from the external source and displayed in the editing interface.

US Patent:

20010016429, Aug 23, 2001

Filed:

Jan 5, 2001

Appl. No.:

09/755009

Inventors:

Alfred Mak - Union City CA, US
Ling Chen - Sunnyvale CA, US
David Smith - Santa Clara CA, US
Mei Chang - Saratoga CA, US
Steve Ghanayem - Sunnyvale CA, US

Assignee:

Applied Materials, Inc.

International Classification:

H01L021/31
B05C011/10
G11B003/68

US Classification:

438/785000, 118/697000, 369/272000

Abstract:

A layer of tungsten nitride is deposited on the upper surface of a wafer. The deposition is performed by providing a gaseous mixture and providing energy to the gaseous mixture to form a plasma. The gaseous mixture includes a first gaseous composition containing tungsten and a second gaseous composition containing nitrogen and hydrogen. The second gaseous composition is one that does not have a gas phase reaction with the first gaseous composition to form tungsten nitride, unless energy is provided to the gaseous mixture. The first gaseous composition may be tungsten hexafluoride (WF). The gaseous mixture may be infused with energy to form a plasma by providing it with energy from an rf signal. In the plasma, the nitrogen dissociates into nitrogen ions, and the tungsten separates from the fluorine. The nitrogen ions and tungsten then combine to form tungsten nitride (WN), which deposits on the wafer's upper surface.

US Patent:

20030140857, Jul 31, 2003

Filed:

Jan 28, 2002

Appl. No.:

10/058670

Inventors:

Salvador Umotoy - Antioch CA, US
Lawrence Chung-Lai Lei - Milpitas CA, US
Ling Chen - Sunnyvale CA, US
Anzhong Chang - San Jose CA, US
Seshadri Ganguli - Sunnyvale CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C016/00

US Classification:

118/726000, 427/255280, 118/715000

Abstract:

In accordance with an embodiment of the invention, a processing chamber is configured to carry out chemical vapor deposition (CVD). An ampoule vaporizer is fastened to the chamber, and is configured to convert a fluorine-free tungsten-containing solid compound to vapor delivered to the chamber for use in the CVD. In one embodiment, the solid compound is tungsten hexacarbonyl (W(CO)6). In another embodiment, a mass flow controller is fastened to the chamber, and is configured to receive the vapor from the ampoule vaporizer, regulate the flow of the vapor, and deliver the vapor to the chamber. In yet another embodiment, the chamber includes a funnel-shaped dispersion plate configured to receive a gas mixture and direct the gas mixture toward a surface of the wafer in a substantially uniform manner.

US Patent:

20050014165, Jan 20, 2005

Filed:

Oct 22, 2003

Appl. No.:

10/690880

Inventors:

Nancy Lee - San Francisco CA, US
Ling Chen - Fremont CA, US

Assignee:

California Pacific Medical Center - San Francisco CA

International Classification:

C12Q001/68

US Classification:

435006000

Abstract:

A panel of biomarkers has been identified for analysis of colorectal cancer. The panel, originally identified using a mouse colon cancer model, has been used to assess changes in human tissue from surgical and biopsy samples against a normal human control panel of biomarkers. The panel may be used for providing a cost effective, rapid, noninvasive procedure for risk assessment, early diagnosis, establishing prognosis, monitoring patient treatment, detecting relapse, and for the discovery of therapeutic intervention of colorectal cancer.

US Patent:

58584641, Jan 12, 1999

Filed:

Feb 13, 1997

Appl. No.:

8/791131

Inventors:

Karl Littau - Palo Alto CA
Dashun S. Zhou - Sunnyvale CA
Alfred Mak - Union City CA
Ling Chen - Sunnyvale CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1620

US Classification:

427237

Abstract:

A method and apparatus for minimizing excess aluminum deposition that can build up inside a substrate processing chamber during an aluminum CVD substrate processing operation. The method of the present invention periodically introduces nitrogen into the processing chamber after aluminum CVD processing of at least a single wafer in order to minimize unwanted aluminum accumulation in various parts of the chamber. According to one embodiment, the present invention provides a method of minimizing excess metal deposition inside a substrate processing chamber after a substrate processing operation. The method includes the steps of introducing a nitrogen-containing passivating gas into a chamber after the substrate processing operation, and maintaining at least a portion of the chamber at a second temperature during the introducing step thereby reducing excess metal build up within the chamber. In preferred embodiments, the method is performed after removal of the substrate from the processing chamber. In other preferred embodiments, the second temperature ranges from about 200. degree. -300. degree. C.