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Weibin Qiu

age ~54

from Urbana, IL

Also known as:
  • Qui Weibin

Weibin Qiu Phones & Addresses

  • Urbana, IL
  • Champaign, IL
  • Evanston, IL
  • Lowell, MA

Us Patents

  • Method Of Plasma Etching Ga-Based Compound Semiconductors

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  • US Patent:
    8343878, Jan 1, 2013
  • Filed:
    Dec 15, 2009
  • Appl. No.:
    12/638721
  • Inventors:
    Weibin Qiu - Urbana IL, US
    Lynford L. Goddard - Champaign IL, US
  • Assignee:
    The Board of Trustees of the University of Illinois - Urbana IL
  • International Classification:
    H01L 21/302
  • US Classification:
    438710, 438700, 438703, 438706, 216 37, 216 41, 216 67
  • Abstract:
    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCland Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.
  • Method Of Plasma Etching Ga-Based Compound Semiconductors

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  • US Patent:
    20100159706, Jun 24, 2010
  • Filed:
    Dec 15, 2009
  • Appl. No.:
    12/638741
  • Inventors:
    Weibin Qiu - Urbana IL, US
    Lynford L. Goddard - Champaign IL, US
  • Assignee:
    The Board of Trustees of the University of Illinois - Urbana IL
  • International Classification:
    H01L 21/3065
  • US Classification:
    438710, 257E21218
  • Abstract:
    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiClgas into the chamber, flowing Ar gas into the chamber, and flowing Hgas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

Resumes

Weibin Qiu Photo 1

Research Associate At Uiuc

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Location:
Urbana-Champaign, Illinois Area
Industry:
Electrical/Electronic Manufacturing
Experience:
UIUC (Electrical/Electronic Manufacturing industry): Research Associate,  (-) 
Weibin Qiu Photo 2

Research Associate At Uiuc

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Position:
Research Associate at UIUC
Location:
Urbana-Champaign, Illinois Area
Industry:
Electrical/Electronic Manufacturing
Work:
UIUC
Research Associate

Facebook

Weibin Qiu Photo 3

Weibin Qiu

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Weibin Qiu Photo 4

Qiu Weibin

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Friends:
Erika Areche, Lilian Yim, Wilson Tsen, Sabena Foo

Youtube

The Prince of Tennis/Wang Qiu Wang Zi (Chines...

This is a slideshow of the cast of The Chinese Prince of Tennis! A few...

  • Category:
    Entertainment
  • Uploaded:
    25 Feb, 2010
  • Duration:
    3m 26s

Googleplus

Weibin Qiu Photo 5

Weibin Qiu


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