Visith T Thipphavong

US Patent:

20050073801, Apr 7, 2005

Filed:

Aug 20, 2004

Appl. No.:

10/922435

Inventors:

Francis Hawe - Santa Clara CA, US
Visith Thipphavong - San Jose CA, US

Assignee:

Tessera, Inc. - San Jose CA

International Classification:

H01L021/8244

US Classification:

361306100

Abstract:

A capacitor is provided having a first electrode including a layer of low-resistance non-silicon material. The capacitor includes a layer of silicon formed on the low-resistance material layer and a capacitor dielectric formed on the layer of silicon. A second electrode is formed on the capacitor dielectric, the second electrode including at least a material selected from the group consisting of metals, low-resistance compounds of metals, and deposited semiconductors having a dopant concentration of at least 1×10cm.