Venkatesh P Pai

US Patent:

7510903, Mar 31, 2009

Filed:

Mar 5, 2008

Appl. No.:

12/042826

Inventors:

Fred Matteson - Phoenix AZ, US
Venkatesh P. Pai - Gilbert AZ, US
Donald K. Cartmell - Phoenix AZ, US

Assignee:

Protek Devices LP - Tempe AZ

International Classification:

H01L 21/00
H01L 21/20

US Classification:

438 91, 438380, 257E29335, 257E21357

Abstract:

A bi-directional transient voltage suppression (“TVS”) device () includes a semiconductor die () that has a first avalanche diode () in series with a first rectifier diode () connected cathode to cathode, electrically coupled in an anti-parallel configuration with a second avalanche diode () in series with a second rectifier diode () also connected cathode to cathode. All the diodes of the TVS device are on a single semiconductor substrate (). The die has a low resistivity buried diffused layer () having a first conductivity type disposed between a semiconductor substrate () having the opposite conductivity type and a high resistivity epitaxial layer () having the first conductivity type. The buried diffused layer shunts most of a transient current away from a portion of the epitaxial layer between the first avalanche diode and the first rectifier diode, thereby reducing the clamping voltage relative to the breakdown voltage. The TVS device is packaged as a flip chip () that has four solder bump pads (-).

US Patent:

8526636, Sep 3, 2013

Filed:

Jul 7, 2010

Appl. No.:

12/832010

Inventors:

Venkatesh P. Pai - Gilbert AZ, US
Mohammad Rehman - Chandler AZ, US
Umesh Jayamohan - Gilbert AZ, US

Assignee:

Protek Devices LP - Tempe AZ

International Classification:

H04B 15/00

US Classification:

381 945, 381 941

Abstract:

A click-noise suppression system having MOSFET transistor switches positioned between the preamplifiers and coupling capacitors of an audio system wherein the suppression system maintains the switches off when the system is turned on until a charging circuit increases the gate voltage of the switches. The switches quickly turn off and the coupling capacitors are discharged through discharge resistors when the system is turned off.

US Patent:

7361942, Apr 22, 2008

Filed:

Dec 9, 2004

Appl. No.:

11/008416

Inventors:

Fred Matteson - Phoenix AZ, US
Venkatesh Panemangalore Pai - Gilbert AZ, US
Donald K. Cartmell - Phoenix AZ, US

Assignee:

Protek Devices, LP - Tempe AZ

International Classification:

H01L 29/00
H01L 29/861

US Classification:

257106, 257603, 257605, 257606, 257E29335, 257E21357

Abstract:

A bi-directional transient voltage suppression (“TVS”) device () includes a semiconductor die () that has a first avalanche diode () in series with a first rectifier diode () connected cathode to cathode, electrically coupled in an anti-parallel configuration with a second avalanche diode () in series with a second rectifier diode () also connected cathode to cathode. All the diodes of the TVS device are on a single semiconductor substrate (). The die has a low resistivity buried diffused layer () having a first conductivity type disposed between a semiconductor substrate () having the opposite conductivity type and a high resistivity epitaxial layer () having the first conductivity type. The buried diffused layer shunts most of a transient current away from a portion of the epitaxial layer between the first avalanche diode and the first rectifier diode, thereby reducing the clamping voltage relative to the breakdown voltage. The TVS device is packaged as a flip chip () that has four solder bump pads (-).

US Patent:

20100019820, Jan 28, 2010

Filed:

Jan 23, 2008

Appl. No.:

12/439618

Inventors:

Venkatesh P. Pai - Gilbert AZ, US
Mohammad Rehman - Chandler AZ, US
Umesh Jayamohan - Chandler AZ, US

International Classification:

H03H 11/26

US Classification:

327290

Abstract:

A low power monolithic CMOS device incorporating functions to control power supply transition noise such as in audio circuits and systems. The digital control circuit incorporates MOSFETs that are maintained in an OFF state during normal operation and are turned ON only when system power is turned on or off to thus eliminate the need for bias voltages and maintain minimal quiescent current.

US Patent:

6867436, Mar 15, 2005

Filed:

Aug 5, 2003

Appl. No.:

10/635088

Inventors:

Fred Matteson - Phoenix AZ, US
Venkatesh Panemangalore Pai - Gilbert AZ, US
Donald K. Cartmell - Phoenix AZ, US

Assignee:

Protek Devices, LP - Tempe AZ

International Classification:

H01L029/30
H01L029/866
H01L029/88
H01L029/861
H01L031/107

US Classification:

257106, 257603, 257606

Abstract:

A bi-directional transient voltage suppression (“TVS”) device () includes a semiconductor die () that has a first avalanche diode () in series with a first rectifier diode () connected cathode to cathode, electrically coupled in an anti-parallel configuration with a second avalanche diode () in series with a second rectifier diode () also connected cathode to cathode. All the diodes of the TVS device are on a single semiconductor substrate (). The die has a low resistivity buried diffused layer () having a first conductivity type disposed between a semiconductor substrate () having the opposite conductivity type and a high resistivity epitaxial layer () having the first conductivity type. The buried diffused layer shunts most of a transient current away from a portion of the epitaxial layer between the first avalanche diode and the first rectifier diode, thereby reducing the clamping voltage relative to the breakdown voltage. The TVS device is packaged as a flip chip () that has four solder bump pads ().