Sheng Tsai Chao

US Patent:

8647737, Feb 11, 2014

Filed:

Sep 30, 2011

Appl. No.:

13/250926

Inventors:

Beihai Ma - Naperville IL, US
Uthamalingam Balachandran - Willowbrook IL, US
Sheng Chao - Greensburg PA, US
Shanshan Liu - Naperville IL, US
Manoj Narayanan - Woodridge IL, US

Assignee:

UChicago Argonne, LLC - Chicago IL

International Classification:

B32B 7/02
B05D 5/12
B05D 3/02
H01G 4/06

US Classification:

428216, 427 79, 4273722, 427379, 427380, 3613211

Abstract:

The invention provides a process for forming crack-free dielectric films on a substrate. The process comprise the application of a dielectric precursor layer of a thickness from about 0. 3 μm to about 1. 0 μm to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1. 5 μm to about 20. 0 μm and providing a final crystallization treatment to form a thick dielectric film. Also provided was a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1. 5 μm to about 20. 0 μm.

US Patent:

20140120736, May 1, 2014

Filed:

Jan 2, 2014

Appl. No.:

14/146357

Inventors:

- Chicago IL, US
Manoj Narayanan - Woodridge IL, US
Uthamalingam Balachandran - Willowbrook IL, US
Sheng Chao - Woodridge IL, US
Shanshan Lie - Homer Glen IL, US

International Classification:

H01B 19/04
H01L 21/02

US Classification:

438763, 427226

Abstract:

The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 μm to about 1.0 μm to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 μm to about 20.0 μm and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 μm to about 20.0 μm.