Rheonix, Inc
Director, Supplier Operations
Kionix, Inc. Apr 1998 - Jun 2015
Director
Kionix, Inc. Apr 1998 - Jun 2015
Director, Qa and Ms
Eastman Kodak 1995 - 1998
Plasma Etch Process Engineer
Us Navy 1982 - 1985
Fire Control Technician, Third Class
Education:
Rochester Institute of Technology 1992 - 1996
Masters, Engineering
Rochester Institute of Technology 1988 - 1991
Skills:
Continuous Improvement Quality Management Quality Assurance Failure Analysis Root Cause Analysis Design of Experiments Semiconductors Fmea Cross Functional Team Leadership Electronics Engineering Management
James E. Moon - Ithaca NY 14850 Timothy J. Davis - Trumansburg NY 14886 Gregory J. Galvin - Ithaca NY 14850 Kevin A. Shaw - Ithaca NY 14850 Paul C. Waldrop - Ithaca NY 14850 Sharlene A. Wilson - Seneca Falls NY 13148
Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as âlatent maskingâ, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as âsimultaneous multi-level etching (SMILE)â, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as âdelayed LOCOSâ, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes. The fourth aspect provides a process sequence that incorporates all three fundamental aspects to fabricate an integrated liquid chromatography (LC)/electrospray ionization (ESI) device.
Method Of Fabricating Semiconductor Wafers Having Multiple Height Subsurface Layers
A method for fabricating semiconductor wafers as multiple-depth structure (i. e. , having portions of varying height). The method includes patterning a first substrate and bonding a second substrate to the first. This process creates a subsurface patterned layer. Portions of the second substrate may then be etched, exposing the subsurface patterned layer for selective processing. For example, the layered structure may then be repeatedly etched to produce a multiple depth structure. Or, for example, exposed portions of the first substrate may have material added to them to create multiple-depth structures. This method of fabrication provides substantial advantages over previous methods.
Method Of Fabricating Integrated Lc/Esi Device Using Smile, Latent Masking, And Delayed Locos Techniques.
James E. Moon - Ithaca NY Timothy J. Davis - Trumansburg NY Gregory J. Galvin - Ithaca NY Kevin A. Shaw - Ithaca NY Paul C. Waldrop - Ithaca NY Sharlene A. Wilson - Seneca Falls NY
Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as âlatent maskingâ, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as â imultaneous ult - evel tching (SMILE)â, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as âdelayed LOCOSâ, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes. The fourth aspect provides a process sequence that incorporates all three fundamental aspects to fabricate an integrated liquid chromatography (LC)/electrospray ionization (ESI) device.
Method For Fabricating Lc Device Using Latent Masking And Delayed Locos Techniques
James E. Moon - Ithaca NY 14850 Timothy J. Davis - Trumansburg NY 14886 Gregory J. Galvin - Ithaca NY 14850 Kevin A. Shaw - Ithaca NY 14850 Paul C. Waldrop - Ithaca NY 14850 Sharlene A. Wilson - Seneca Falls NY 13148
International Classification:
B81C 100
US Classification:
216 2, 216 67, 216 79, 438723, 438743, 438756
Abstract:
Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as âlatent maskingâ, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as âsimultaneous multi-level etching (SMILE)â, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as âdelayed LOCOSâ, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes. The fourth aspect provides a process sequence that incorporates all three fundamental aspects to fabricate an integrated liquid chromatography (LC)/electrospray ionization (ESI) device.
Method For Fabricating Esi Device Using Smile And Delayed Locos Techniques
James E. Moon - Ithaca NY Timothy J. Davis - Trumansburg NY Gregory J. Galvin - Ithaca NY Kevin A. Shaw - Ithaca NY Paul C. Waldrop - Ithaca NY Sharlene A. Wilson - Seneca Falls NY
Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as âlatent maskingâ, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as âsimultaneous multi-level etching (SMILE)â, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as âdelayed LOCOSâ, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes. The fourth aspect provides a process sequence that incorporates all three fundamental aspects to fabricate an integrated liquid chromatography (LC)/electrospray ionization (ESI) device.
Methods Of Fabricating Mems And Microfluidic Devices Using Latent Masking Technique
James E. Moon - Ithaca NY 14850 Timothy J. Davis - Trumansburg NY 14886 Gregory J. Galvin - Ithaca NY 14850 Kevin A. Shaw - Ithaca NY 14850 Paul C. Waldrop - Ithaca NY 14850 Sharlene A. Wilson - Seneca Falls NY 13148
Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as âlatent maskingâ, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as âsimultaneous multi-level etching (SMILE)â, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as âdelayed LOCOSâ, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes. The fourth aspect provides a process sequence that incorporates all three fundamental aspects to fabricate an integrated liquid chromatography (LC)/electrospray ionization (ESI) device.
Method For Fabricating Mems And Microfluidic Devices Using Smile, Latent Masking, And Delayed Locos Techniques
James E. Moon - Ithaca NY Timothy J. Davis - Trumansburg NY Gregory J. Galvin - Ithaca NY Kevin A. Shaw - Ithaca NY Paul C. Waldrop - Ithaca NY Sharlene A. Wilson - Seneca Falls NY
Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as âlatent maskingâ, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as âsimultaneous multi-level etching (SMILE)â, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as âdelayed LOCOSâ, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes. The fourth aspect provides a process sequence that incorporates all three fundamental aspects to fabricate an integrated liquid chromatography (LC)/electrospray ionization (ESI) device.
Method For Fabricating Integrated Lc/Esi Device Using Smile, Latent Masking, And Delayed Locos Techniques
James E. Moon - Ithaca NY, US Timothy J. Davis - Trumansburg NY, US Gregory J. Galvin - Ithaca NY, US Kevin A. Shaw - Ithaca NY, US Paul C. Waldrop - Ithaca NY, US Sharlene A. Wilson - Seneca Falls NY, US
Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as “latent masking”, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as “imultaneous ulti-evel tching (SMILE)”, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as “delayed LOCOS”, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes. The fourth aspect provides a process sequence that incorporates all three fundamental aspects to fabricate an integrated liquid chromatography (LC)/electrospray ionization (ESI) device.
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