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Paul C Waldrop

age ~60

from Ithaca, NY

Also known as:
  • Paul L Waldrop
Phone and address:
103 Warwick Pl, Ithaca, NY 14850
607-257-5262

Paul Waldrop Phones & Addresses

  • 103 Warwick Pl, Ithaca, NY 14850 • 607-257-5262
  • 105 Fallview Ter, Ithaca, NY 14850
  • 104 Randolph Rd, Ithaca, NY 14850
  • Walworth, NY
  • Henrietta, NY
  • San Jose, CA
  • Webster, NY
  • 103 Warwick Pl, Ithaca, NY 14850

Work

  • Company:
    Radio & television production office
    Jul 2005
  • Position:
    Director

Education

  • School / High School:
    University of Oklahoma
    2002
  • Specialities:
    M.A. in Communication

Resumes

Paul Waldrop Photo 1

Director, Supplier Operations

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Location:
Ithaca, NY
Industry:
Semiconductors
Work:
Rheonix, Inc
Director, Supplier Operations

Kionix, Inc. Apr 1998 - Jun 2015
Director

Kionix, Inc. Apr 1998 - Jun 2015
Director, Qa and Ms

Eastman Kodak 1995 - 1998
Plasma Etch Process Engineer

Us Navy 1982 - 1985
Fire Control Technician, Third Class
Education:
Rochester Institute of Technology 1992 - 1996
Masters, Engineering
Rochester Institute of Technology 1988 - 1991
Skills:
Continuous Improvement
Quality Management
Quality Assurance
Failure Analysis
Root Cause Analysis
Design of Experiments
Semiconductors
Fmea
Cross Functional Team Leadership
Electronics
Engineering Management
Interests:
Science and Technology
Education
Health
Paul Waldrop Photo 2

General Manager

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Location:
Ithaca, NY
Industry:
Semiconductors
Work:
Calient Optical Components
General Manager
Paul Waldrop Photo 3

Paul Waldrop

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Paul Waldrop Photo 4

Paul Waldrop

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Paul Waldrop Photo 5

Paul Waldrop

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Paul Waldrop Photo 6

Paul Waldrop

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Work:
Radio & Television Production Office

Jul 2005 to 2000
Director
Pentagon Channel

Feb 2004 to Jul 2005
News Director
Deputy News Director/Operations Manager
Mar 1993 to Feb 2004
United States Navy

Aug 1972 to Nov 1992
Retired as a Senior Chief Journalist (E-8)
Education:
University of Oklahoma
2002
M.A. in Communication
State University of New York
1990
B.S. in Liberal Studies
Name / Title
Company / Classification
Phones & Addresses
Paul Waldrop
Director , Vice-President
B. C. and Gladys L. Drinkard Foundation, Inc

Us Patents

  • Methods Of Fabricating Microelectromechanical And Microfluidic Devices

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  • US Patent:
    6464892, Oct 15, 2002
  • Filed:
    Nov 2, 2001
  • Appl. No.:
    10/003672
  • Inventors:
    James E. Moon - Ithaca NY 14850
    Timothy J. Davis - Trumansburg NY 14886
    Gregory J. Galvin - Ithaca NY 14850
    Kevin A. Shaw - Ithaca NY 14850
    Paul C. Waldrop - Ithaca NY 14850
    Sharlene A. Wilson - Seneca Falls NY 13148
  • International Classification:
    H01L 2100
  • US Classification:
    216 79, 216 47, 216 80, 438723, 438734, 438736, 438743, 438942
  • Abstract:
    Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as âlatent maskingâ, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as âsimultaneous multi-level etching (SMILE)â, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as âdelayed LOCOSâ, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes. The fourth aspect provides a process sequence that incorporates all three fundamental aspects to fabricate an integrated liquid chromatography (LC)/electrospray ionization (ESI) device.
  • Method Of Fabricating Semiconductor Wafers Having Multiple Height Subsurface Layers

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  • US Patent:
    6544863, Apr 8, 2003
  • Filed:
    Aug 21, 2001
  • Appl. No.:
    09/934783
  • Inventors:
    John M. Chong - Santa Barbara CA
    Paul Waldrop - Ithaca NY
    Tim Davis - Trumansburg NY
    Scott Adams - Ithaca NY
  • Assignee:
    Calient Networks, Inc. - San Jose CA
  • International Classification:
    H01L 2146
  • US Classification:
    438455, 438456, 438457, 438458, 438459, 438718, 216 2
  • Abstract:
    A method for fabricating semiconductor wafers as multiple-depth structure (i. e. , having portions of varying height). The method includes patterning a first substrate and bonding a second substrate to the first. This process creates a subsurface patterned layer. Portions of the second substrate may then be etched, exposing the subsurface patterned layer for selective processing. For example, the layered structure may then be repeatedly etched to produce a multiple depth structure. Or, for example, exposed portions of the first substrate may have material added to them to create multiple-depth structures. This method of fabrication provides substantial advantages over previous methods.
  • Method Of Fabricating Integrated Lc/Esi Device Using Smile, Latent Masking, And Delayed Locos Techniques.

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  • US Patent:
    6673253, Jan 6, 2004
  • Filed:
    Nov 2, 2001
  • Appl. No.:
    10/004493
  • Inventors:
    James E. Moon - Ithaca NY
    Timothy J. Davis - Trumansburg NY
    Gregory J. Galvin - Ithaca NY
    Kevin A. Shaw - Ithaca NY
    Paul C. Waldrop - Ithaca NY
    Sharlene A. Wilson - Seneca Falls NY
  • Assignee:
    Kionix, Inc. - Ithaca NY
  • International Classification:
    B81B 702
  • US Classification:
    216 2, 216 39, 216 57, 216 67, 216 79, 216 99, 438696, 438743, 438744, 438756, 438757
  • Abstract:
    Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as âlatent maskingâ, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as â imultaneous ult - evel tching (SMILE)â, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as âdelayed LOCOSâ, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes. The fourth aspect provides a process sequence that incorporates all three fundamental aspects to fabricate an integrated liquid chromatography (LC)/electrospray ionization (ESI) device.
  • Method For Fabricating Lc Device Using Latent Masking And Delayed Locos Techniques

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  • US Patent:
    6702950, Mar 9, 2004
  • Filed:
    Nov 2, 2001
  • Appl. No.:
    10/004299
  • Inventors:
    James E. Moon - Ithaca NY 14850
    Timothy J. Davis - Trumansburg NY 14886
    Gregory J. Galvin - Ithaca NY 14850
    Kevin A. Shaw - Ithaca NY 14850
    Paul C. Waldrop - Ithaca NY 14850
    Sharlene A. Wilson - Seneca Falls NY 13148
  • International Classification:
    B81C 100
  • US Classification:
    216 2, 216 67, 216 79, 438723, 438743, 438756
  • Abstract:
    Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as âlatent maskingâ, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as âsimultaneous multi-level etching (SMILE)â, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as âdelayed LOCOSâ, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes. The fourth aspect provides a process sequence that incorporates all three fundamental aspects to fabricate an integrated liquid chromatography (LC)/electrospray ionization (ESI) device.
  • Method For Fabricating Esi Device Using Smile And Delayed Locos Techniques

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  • US Patent:
    6706200, Mar 16, 2004
  • Filed:
    Nov 2, 2001
  • Appl. No.:
    10/004300
  • Inventors:
    James E. Moon - Ithaca NY
    Timothy J. Davis - Trumansburg NY
    Gregory J. Galvin - Ithaca NY
    Kevin A. Shaw - Ithaca NY
    Paul C. Waldrop - Ithaca NY
    Sharlene A. Wilson - Seneca Falls NY
  • Assignee:
    Kionix, Inc. - Ithaca NY
  • International Classification:
    B81B 702
  • US Classification:
    216 2, 216 13, 216 27, 216 39, 216 67, 216 79, 438723, 438734, 438736, 438743, 438942
  • Abstract:
    Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as âlatent maskingâ, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as âsimultaneous multi-level etching (SMILE)â, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as âdelayed LOCOSâ, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes. The fourth aspect provides a process sequence that incorporates all three fundamental aspects to fabricate an integrated liquid chromatography (LC)/electrospray ionization (ESI) device.
  • Methods Of Fabricating Mems And Microfluidic Devices Using Latent Masking Technique

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  • US Patent:
    6780336, Aug 24, 2004
  • Filed:
    Nov 2, 2001
  • Appl. No.:
    10/004463
  • Inventors:
    James E. Moon - Ithaca NY 14850
    Timothy J. Davis - Trumansburg NY 14886
    Gregory J. Galvin - Ithaca NY 14850
    Kevin A. Shaw - Ithaca NY 14850
    Paul C. Waldrop - Ithaca NY 14850
    Sharlene A. Wilson - Seneca Falls NY 13148
  • International Classification:
    B81C 100
  • US Classification:
    216 2, 216 47, 216 49, 216 58, 216 72, 216 79, 216 80, 438706, 438723, 438725
  • Abstract:
    Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as âlatent maskingâ, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as âsimultaneous multi-level etching (SMILE)â, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as âdelayed LOCOSâ, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes. The fourth aspect provides a process sequence that incorporates all three fundamental aspects to fabricate an integrated liquid chromatography (LC)/electrospray ionization (ESI) device.
  • Method For Fabricating Mems And Microfluidic Devices Using Smile, Latent Masking, And Delayed Locos Techniques

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  • US Patent:
    6824697, Nov 30, 2004
  • Filed:
    Nov 2, 2001
  • Appl. No.:
    10/003851
  • Inventors:
    James E. Moon - Ithaca NY
    Timothy J. Davis - Trumansburg NY
    Gregory J. Galvin - Ithaca NY
    Kevin A. Shaw - Ithaca NY
    Paul C. Waldrop - Ithaca NY
    Sharlene A. Wilson - Seneca Falls NY
  • Assignee:
    Kionix, Inc. - Ithaca NY
  • International Classification:
    B81C 100
  • US Classification:
    216 2, 216 51, 216 62, 216 67, 216 72, 216 79, 438 45, 438723, 438743, 438756
  • Abstract:
    Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as âlatent maskingâ, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as âsimultaneous multi-level etching (SMILE)â, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as âdelayed LOCOSâ, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes. The fourth aspect provides a process sequence that incorporates all three fundamental aspects to fabricate an integrated liquid chromatography (LC)/electrospray ionization (ESI) device.
  • Method For Fabricating Integrated Lc/Esi Device Using Smile, Latent Masking, And Delayed Locos Techniques

    view source
  • US Patent:
    6913701, Jul 5, 2005
  • Filed:
    Oct 16, 2003
  • Appl. No.:
    10/687198
  • Inventors:
    James E. Moon - Ithaca NY, US
    Timothy J. Davis - Trumansburg NY, US
    Gregory J. Galvin - Ithaca NY, US
    Kevin A. Shaw - Ithaca NY, US
    Paul C. Waldrop - Ithaca NY, US
    Sharlene A. Wilson - Seneca Falls NY, US
  • Assignee:
    Kionix, Inc. - Ithaca NY
  • International Classification:
    H01L021/00
  • US Classification:
    216 2, 216 41, 216 57, 216 67, 216108, 438703, 438704, 438723, 438724, 438725
  • Abstract:
    Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as “latent masking”, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as “imultaneous ulti-evel tching (SMILE)”, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as “delayed LOCOS”, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes. The fourth aspect provides a process sequence that incorporates all three fundamental aspects to fabricate an integrated liquid chromatography (LC)/electrospray ionization (ESI) device.

Youtube

Michael Waldrop Performs "Rhythm Song" by Pau...

Eastern Washington University Director of Percussion Studies Michael W...

  • Category:
    Education
  • Uploaded:
    11 Feb, 2010
  • Duration:
    9m 33s

Please Stay

John Paul Almon and Sarah Elizabeth Combs sing Please Stay from Pandem...

  • Category:
    Entertainment
  • Uploaded:
    12 Dec, 2010
  • Duration:
    3m 10s

The Adventures of Paul

This is our movie. The Adventures of Paul The title explains everythin...

  • Category:
    Comedy
  • Uploaded:
    20 Sep, 2009
  • Duration:
    7m 1s

Michael Waldrop Performs "Time After Time" by...

Eastern Washington University Director of Percussion Studies Michael W...

  • Category:
    Education
  • Uploaded:
    11 Feb, 2010
  • Duration:
    5m

Josie Walsh's "INTERSECTION"

"Intersection" from the quirkiness of a single pointe shoe to bare fee...

  • Category:
    Entertainment
  • Uploaded:
    29 Jun, 2011
  • Duration:
    1m 57s

Just Friends A Jonas Love Story Ep 4

I Saw Denise And Paul At The Door With Elvis. "ELVIS!" I Said Why Runn...

  • Category:
    People & Blogs
  • Uploaded:
    28 May, 2009
  • Duration:
    2m 30s

Lainey Wright at SeaWorld!

Lainey Wright, joined by Matt Waldrop and Paul Colman, at SeaWorld, Sa...

  • Category:
    Music
  • Uploaded:
    04 May, 2011
  • Duration:
    2m 10s

Josie Walsh presents " INTERSECTION"

"INTERSECTION", an evening of innovative cutting-edge choreography by ...

  • Category:
    Entertainment
  • Uploaded:
    26 Jun, 2011
  • Duration:
    1m 6s

Classmates

Paul Waldrop Photo 7

Paul Waldrop

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Schools:
Trenton High School Trenton TX 1978-1982
Community:
Sharon Owsen, Charles Holcomb
Paul Waldrop Photo 8

Paul Waldrop

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Schools:
Edison High School Gary IN 1964-1969
Community:
Dan Taylor, Cyndy Bazin
Paul Waldrop Photo 9

Paul Waldrop, Prospect Hi...

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Paul Waldrop Photo 10

Prospect High School, Sar...

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Graduates:
Rick Garrett (1971-1975),
Paul Daube (1965-1969),
Rochelle Rhodes (1976-1980),
Paul Waldrop (1977-1981)
Paul Waldrop Photo 11

Trenton High School, Tren...

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Graduates:
Paul Waldrop (1978-1982),
Brittney Robinson (2001-2005),
Robert Waldrop (1980-1984),
Kody Kirkland (2003-2007)

Googleplus

Paul Waldrop Photo 12

Paul Waldrop

Work:
IS Media - Regional Director (2010)
Infiniti Sports - EFO (96)
About:
Paul Wal here. The peoples champ. Goindeep baby!!!
Paul Waldrop Photo 13

Paul Waldrop

Paul Waldrop Photo 14

Paul Waldrop

Paul Waldrop Photo 15

Paul Waldrop

Paul Waldrop Photo 16

Paul Waldrop

Paul Waldrop Photo 17

Paul Waldrop

Flickr

Facebook

Paul Waldrop Photo 26

Paul Waldrop

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Paul Waldrop Photo 27

Paul Waldrop

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Paul Waldrop Photo 28

Paul Waldrop

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Paul Waldrop Photo 29

Paul Waldrop

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Paul Waldrop Photo 30

Paul Waldrop

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Paul Waldrop Photo 31

Paul C Waldrop

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Paul Waldrop Photo 32

Paul Waldrop

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Paul Waldrop Photo 33

Paul Waldrop

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Plaxo

Paul Waldrop Photo 34

Paul Waldrop

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Senior Technical Support Analyst at Interstate Bat...

Myspace

Paul Waldrop Photo 35

paul waldrop

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Locality:
Ducktown, Alabama
Gender:
Male
Birthday:
1950
Paul Waldrop Photo 36

Paul Waldrop

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Locality:
HILLIARD, OHIO
Gender:
Male
Birthday:
1927

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