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Oleksandr Kramarenko

age ~41

from Durham, NC

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Also known as:
  • R Kramarenko
  • R O
  • Oleksander O
Related to:
Connected to:

Oleksandr Kramarenko Phones & Addresses

  • Durham, NC
  • Mebane, NC
  • Morrisville, NC
  • Bristol, PA
  • Philadelphia, PA

Work

  • Company:
    Y-carbon, inc
    2008
  • Position:
    Materials chemist

Education

  • School / High School:
    National Technical University "Kyiv Polytechnic Institute"- Kyiv, Ukraine
    Jan 1999
  • Specialities:
    M.S. in Chemist Engineer of Chemical Technology of Inorganic Substances

Skills

R&D • Product Development • Materials Engineering and Manufacturing:... • heterogenic and solid state synthesis • sol-gel • microwave dielectric ceramics • metamaterials • sorbents • film coatings • pyrolysis • activation • high temperature synthesis • gas treatment • catalysis • water purification • inorganic materials design and manufactu... • powder chemistry • materials for gas storage • energy storage (materials for supercapas... • materials for gas and liquid purificatio... • process equipment design • electrode material fabrication. C... • SEM • TEM • XRF • Raman spectroscopy • PIXE • FTIR • TGA • UV-VIS • gas porosimetry • electrophysical testing techniques • mechanical testing • heat microscopy • chemical analysis • Solid Phase Extraction • Thermal Desorption. Software: MS Offic... • OriginLab • HyperChem • MathCAD • XRD Data interpretation suites • Porosity data analysis (Micromeritics su... • Adobe Photoshop • Corel Draw Suite • SolidWorks

Us Patents

  • Method Of Making Carbide Derived Carbon With Enhanced Porosity And Higher Purity

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  • US Patent:
    20120148473, Jun 14, 2012
  • Filed:
    Dec 12, 2011
  • Appl. No.:
    13/316715
  • Inventors:
    Oleksandr Kramarenko - Bristol PA, US
  • Assignee:
    Y-CARBON, INC. - Bristol PA
  • International Classification:
    B01J 20/30
    C01B 31/00
    C01B 31/02
  • US Classification:
    423445 R, 502418
  • Abstract:
    Purity (chemical composition) and porosity of carbons are important for most of their applications. There are several methods of making porous carbons. Carbide derived carbon represents a method of manufacturing carbon from metal carbides by thermochemical etching of metals and/or metalloids at elevated temperatures. This invention provides a method of manufacturing carbide derived carbon with higher purity. The produced carbons can be used in several applications where higher purity carbons are desired including but not limited to gas chromatography, liquid chromatography, supercapacitors, batteries, fuel cells, hemodiafiltration, enterosorbent, and toxin removal from biological fluids.

  • Large Dimension Silicon Carbide Single Crystalline Materials With Reduced Crystallographic Stress

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  • US Patent:
    20220189768, Jun 16, 2022
  • Filed:
    Dec 15, 2020
  • Appl. No.:
    17/121863
  • Inventors:
    - Durham NC, US
    Varad R. Sakhalkar - Morrisville NC, US
    Caleb A. Kent - Durham NC, US
    Valeri F. Tsvetkov - Durham NC, US
    Michael J. Paisley - Raleigh NC, US
    Oleksandr Kramarenko - Durham NC, US
    Matthew David Conrad - Durham NC, US
    Eugene Deyneka - Raleigh NC, US
    Steven Griffiths - Morrisville NC, US
    Simon Bubel - Carrboro NC, US
    Adrian R. Powell - Cary NC, US
    Robert Tyler Leonard - Raleigh NC, US
    Elif Balkas - Cary NC, US
    Curt Progl - Raleigh NC, US
    Michael Fusco - Wake Forest NC, US
    Alexander Shveyd - Chapel Hill NC, US
    Kathy Doverspike - Cary NC, US
    Lukas Nattermann - Chapel Hill NC, US
  • International Classification:
    H01L 21/02
    C30B 29/36
  • Abstract:
    Silicon carbide (SiC) materials including SiC wafers and SiC boules and related methods are disclosed that provide large dimension SiC wafers with reduced crystallographic stress. Growth conditions for SiC materials include maintaining a generally convex growth surface of SiC crystals, adjusting differences in front-side to back-side thermal profiles of growing SiC crystals, supplying sufficient source flux to allow commercially viable growth rates for SiC crystals, and reducing the inclusion of contaminants or non-SiC particles in SiC source materials and corresponding SiC crystals. By forming larger dimension SiC crystals that exhibit lower crystallographic stress, overall dislocation densities that are associated with missing or additional planes of atoms may be reduced, thereby improving crystal quality and usable SiC crystal growth heights.

Resumes

Oleksandr Kramarenko Photo 1

Process Engineer | Process Technician

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Location:
Raleigh, NC
Industry:
Semiconductors
Work:
Cree Aug 2016 - Jun 2015
Process Engineer | Process Technician Manager
Y-Carbon, Inc. Sep 2008 - Jul 2013
Materials Chemist
Igic Nasu Kyiv Ukraine Oct 2004 - Sep 2008
Engineer, Young Researcher
Municipal Water Treatment Facility Kolomiya Ukraine 2003 - 2003
Process Engineer
2003 - 2003
Process Engineer | Process Technician
Education:
National Technical University of Ukraine 2005
National Technical University of Ukraine 'Kyiv Polytechnic Institute'​ 1999 - 2005
Master of Science, Masters National Technical University of Ukraine 2003
Skills:
Materials Science
Nanomaterials
Characterization
Nanotechnology
Powder X Ray Diffraction
Product Development
Materials
Process Engineering
Research
Carbon
Chromatography
Porous Materials
Tga
Inorganic Chemistry
Ftir
R&D
Chemical Engineering
Engineering
Surface Chemistry
Electrochemistry
Process Simulation
Porosimetry
Pyrolysis
Manufacturing Engineering
Hplc
Surface
Afm
Tem
Sorbents
Materials Development
Manufacturing Operations Management
Manufacturing
Process Development
Ceramics
Gas Processing
Design For Manufacturing
Solid State Characterization
Material Characterisation
Energy Storage
Gas Storage
Adsorption
Dielectrics
Solid State Physics
Crystal Growth
Ceramic Materials
Research and Development
Jmp
Interests:
Originlab
Design
Product Development
Theoretical Cosmology
Hyperchem
General Relativity
General Relativity Software
Adobe Photoshop
Industrial Economics
Photography
Corel Draw
Materials Engineering
Software
Astronomy
Materials Science
Nanotechnology
Inorganic Chemistry
Manufacturing Industry
Languages:
Ukrainian
Russian
English
Oleksandr Kramarenko Photo 2

Oleksandr Kramarenko Bristol, PA

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Work:
Y-Carbon, Inc

2008 to 2000
Materials Chemist Solid State Dep. Institute of General and Inorganic Chemistry, National Academy of Science
Kyiv, Ukraine
2004 to 2008
Engineer Municipal Water Treatment Facility
Kolomiya, Ukraine
May 2003 to Oct 2003
Process Engineer (Intern)
Education:
National Technical University "Kyiv Polytechnic Institute"
Kyiv, Ukraine
Jan 1999 to Jan 2005
M.S. in Chemist Engineer of Chemical Technology of Inorganic Substances National Technical University "Kyiv Polytechnic Institute"
Kyiv, Ukraine
Jan 1999 to Jan 2004
B.S. in Process Engineer of Chemical Technology of Inorganic Substances
Skills:
R&D, Product Development, Materials Engineering and Manufacturing: Nanotechnology, heterogenic and solid state synthesis, sol-gel, microwave dielectric ceramics, metamaterials, sorbents, film coatings, pyrolysis, activation, high temperature synthesis, gas treatment, catalysis, water purification, inorganic materials design and manufacturing, powder chemistry, materials for gas storage, energy storage (materials for supercapasitors and batteries), materials for gas and liquid purification and Chromatography, process equipment design, electrode material fabrication. Characterization: XRD, SEM, TEM, XRF, Raman spectroscopy, PIXE, FTIR, TGA, UV-VIS, gas porosimetry, electrophysical testing techniques, mechanical testing, heat microscopy, chemical analysis, Solid Phase Extraction, Thermal Desorption. Software: MS Office Suite, OriginLab, HyperChem, MathCAD, XRD Data interpretation suites, Porosity data analysis (Micromeritics suite), Adobe Photoshop, Corel Draw Suite, SolidWorks
Oleksandr Kramarenko Photo 3

Oleksandr Kramarenko

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