Miriam S Marwick

US Patent:

20100245809, Sep 30, 2010

Filed:

Mar 17, 2008

Appl. No.:

12/531191

Inventors:

Andreas G. Andreou - Baltimore MD, US
Miriam Adlerstein Marwick - Baltimore MD, US
Philippe O. Pouliquen - Baltimore MD, US

Assignee:

JOHNS HOPKINS UNIVERSITY - Baltimore MD

International Classification:

H01L 27/144
H01L 31/107
G01J 1/44

US Classification:

356222, 257290, 2502083, 2502141, 257292, 257438, 257E31063

Abstract:

An avalanche photodiode and a sensor array comprising an array of said avalanche photodiodes is disclosed. Then avalanche photodiode comprises a substrate of a first conductivity type; a first well of a second conductivity type formed within the substrate; a second well of the second conductivity type formed substantially overlying and extending into the first well; a heavily doped region of the first conductivity type formed substantially overlying and extending into the first well, the junction between the heavily doped region and the second well forming an avalanche multiplication region; a guard ring formed from a first conductivity material positioned substantially about the periphery of the multiplication region at least partially underlying the heavily doped region; and an outer well ring of the second conductivity type formed about the perimeter of the deep well and the guard ring. The sensor array comprises a plurality of pixel elements, each of the pixel elements being configured to operate on discrete value continuous time (DVCT) basis. Each of the pixel elements can include the avalanche photodiode previously described.