Michael J Driver

US Patent:

39436225, Mar 16, 1976

Filed:

Oct 22, 1974

Appl. No.:

5/517284

Inventors:

He B. Kim - Murrysville PA
Michael C. Driver - Trafford PA

Assignee:

Westinghouse Electric Corporation - Pittsburgh PA

International Classification:

H01L 21205
H01L 2128
H01L 2948

US Classification:

29579

Abstract:

A semiconductor device and particularly a self-aligned Schottky barrier gate field-effect transistor is made by epitaxial growth of facets corresponding to the source and drain regions on a surface of a semiconductor body through spaced apart preferably elongated windows in a masking layer and overgrowing edge portions of the masking layer at the windows to form overgrown portions on the facets. The channel region of the transistor is previously formed in the semiconductor body, preferably by epitaxial growth of a layer on a surface of a semiconductor body having a semi-insulating layer adjoining the surface. After removal of the masking layer, the Schottky barrier gate is self-aligned by deposition of metal on the unshielded portions of the planar surface between the facets.

US Patent:

41762959, Nov 27, 1979

Filed:

Jun 15, 1978

Appl. No.:

5/915649

Inventors:

Michael C. Driver - Penn Hills PA
James G. Oakes - Franklin PA
John R. Davis - Export PA

Assignee:

Westinghouse Electric Corp. - Pittsburgh PA

International Classification:

H03K 342
H03K 357

US Classification:

315 39

Abstract:

A high peak power microwave generator is disclosed in which a plurality of transmission lines are connected to an output wave guide at predetermined intervals along the direction of propagation. Each transmission line is periodically charged, and this electromagnetic energy is released into the wave guide upon the actuation of a light activated silicon switch (LASS) diode connected to the transmission line. The LASS diodes are actuated simultaneously by a laser beam which traverses equal optical paths to each switch. The coincident switching of the transmission lines enables the power in each line to be additive in the wave guide, and much higher output pulses can be obtained. Further, the high speed switching capabilities afforded by the LASS diodes means that the resulting high power can be obtained at a much higher frequency.

US Patent:

48231363, Apr 18, 1989

Filed:

Feb 11, 1987

Appl. No.:

7/013490

Inventors:

Harvey C. Nathanson - Pittsburgh PA
Michael C. Driver - Pittsburgh PA
Michael W. Cresswell - Plum Borough PA
Ronald G. Freitag - Baltimore MD
Donald K. Alexander - Ellicott City MD
Daniel F. Yaw - Ellicott City MD

Assignee:

Westinghouse Electric Corp. - Pittsburgh PA

International Classification:

H01Q 326

US Classification:

342368

Abstract:

An improved phased-array active antenna transmit-receive means utilizing a multiplicity of individual transmit-receive cells positioned in an array format upon a common wafer of semiconductor material. Each transmit-receive cell, comprises a multiplicity of redundant, integrated circuit, electronic devices implanted upon the common semiconductor substrate. The transmit-receive cells utilize novel mitered mechanical switches to permanently interconnect individual electronic devices into either transmit or receive circuits during the fabrication and test of the transmit-receive cells. Radio frequency and direct current input and output vias formed from a novel metal evaportion technique connect the devices upon the surface of the common semiconductor wafer to underlying, insulated direct current distribution circuits and a radio frequency manifold. This array of improved phased-array active antenna transmit-receive means comprised of transmit-receive cells sharing common central processing means, logic control and heat dissipation means results in a significant reduction in the size and weight of the standard phased-array active antenna system. This significant reduction in antenna system size and weight is very important in broad band electronic countermeasure systems or narrow band phased array active antenna radar systems as used in advanced tactical fighters, or space applications.

US Patent:

59230584, Jul 13, 1999

Filed:

Feb 5, 1997

Appl. No.:

8/795807

Inventors:

Anant K. Agarwal - Monroeville PA
Rowan L. Messham - Murrysville PA
Michael C. Driver - McKeesport PA

Assignee:

Northrop Grumman Corporation - Los Angeles CA

International Classification:

H01L 29737

US Classification:

257198

Abstract:

A heat tolerant, frequency responsive transistor for use in the microwave region includes a collector region, a base region overlying the collector region, and an emitter region including an AlGaN layer overlying at least part of said base region, forming a heterojunction between said base region and said emitter region. The emitter region may include two layers. The HBT may be mounted on a SiC or sapphire substrate. The HBT may include a buffer layer between the substrate and the collector region.

US Patent:

47698837, Sep 13, 1988

Filed:

Mar 7, 1983

Appl. No.:

6/472529

Inventors:

Harvey C. Nathanson - Pittsburgh PA
James G. Oakes - Worchester MA
Varley L. Wrick - Andover MA
Michael C. Driver - Pittsburgh PA
Joseph C. Kotvas - Monroeville PA

Assignee:

Westinghouse Electric Corp. - Pittsburgh PA

International Classification:

H01G 700
H01F 706
H05K 300
H01P 308
G01R 2300

US Classification:

29 2542

Abstract:

A method of tuning a microwave integrated circuit by trimming desired film-type circuit patterns included therein by a cold-pressure bonding technique is disclosed. More specifically, intercoupled circuit patterns are formed on a semi-insulating substrate with some circuit patterns having impedance characteristics of a desired nominal value. Each circuit pattern may comprise a plurality of conductive paths of malleable metal. Gaps are provided at appropriately chosen places in the conductive paths of predetermined circuit patterns. Selected ones of the gaps of the conductive paths are bridged to adjust the impedance characteristics of the associated predetermined circuit pattern by wiping with a probe the malleable metal of the conductive path at one end of the gap, across the gap to make contact with the malleable metal of the conductive path at the other end of the gap. The method further includes steps for in-situ testing of the integrated circuit by energizing the microwave integrated circuit to effect operation thereof; testing selected parameters of the energized microwave integrated circuit for determining the operational response thereof; and performing the step of bridging selected gaps of the energized microwave integrated circuit with a probe of insulating material to adjust the impedance characteristics thereof to render a desired measure response therefrom as determined by the testing step.

US Patent:

43813410, Apr 26, 1983

Filed:

Feb 1, 1982

Appl. No.:

6/344467

Inventors:

John X. Przybysz - Penn Hills PA
Michael C. Driver - Monroeville PA
Harvey C. Nathanson - Pittsburgh PA

Assignee:

Westinghouse Electric Corp. - Pittsburgh PA

International Classification:

H01L 21312
B44C 122
C03C 1500
C03C 2506

US Classification:

430312

Abstract:

Electrical interconnection paths or vias are provided through relatively thick type III/V semiconductive substrates, such as gallium arsenide, to permit through the substrate electrical interconnection of planar transistor devices. The vias are etched in a two-step process which ensures that the via lateral dimensions are less than the transistor contacts with which they are aligned. The first step comprises selectively thinning the thick substrate from the back surface over an area which encompasses the transistor array formed in the front surface of the substrate. The second step is to etch the individual vias through this prior thinned substrate at areas aligned with the transistor contacts.

US Patent:

49048317, Feb 27, 1990

Filed:

Jan 3, 1989

Appl. No.:

7/293164

Inventors:

Harvey C. Nathanson - Pittsburgh PA
Michael C. Driver - Pittsburgh PA
Michael W. Cresswell - Plum Borough PA
Ronald G. Freitag - Baltimore MD
Donald K. Alexander - Ellicott City MD
Daniel F. Yaw - Ellicott City MD

Assignee:

Westinghouse Electric Corp. - Pittsburgh PA

International Classification:

H01H 102

US Classification:

200269

Abstract:

An improved phased-array active antenna transmit-receive means utilizing a multiplicity of individual transmit-receive cells positioned in an array format upon a common wafer of semiconductor material. Each transmit-receiver cell, comprises a multiplicity of redundant, integrated circuit, electronic devices implanted upon the common semiconductor substrate. The transmit-receive cells utilize novel mitered mechanical switches to permanently interconnect individual electronic devices into either transmit or receive circuits during the fabrication and test of the transmit-receive cells. Radio frequency and direct current input and output vias formed from a novel metal evaporation technique connect the devices upon the surface of the common semiconductor wafer to underlying, insulated direct current distribution circuits and a radio frequency manifold. This array of improved phased-array active antenna transmit-receive means comprised of transmit-receive cells sharing common central processing means, logic control and heat dissipation means results in a significant reduction in the size and weight of the standard phased-array active antenna system. This significant reduction in antenna system size and weight is very important in broad band electronic countermeasure systems or narrow band phased array active antenna radar systems as used in advanced tactical fighters, or space applications.

US Patent:

39421864, Mar 2, 1976

Filed:

Mar 3, 1975

Appl. No.:

5/554785

Inventors:

Bruce R. McAvoy - Pittsburgh PA
Michael C. Driver - Trafford PA

Assignee:

Westinghouse Electric Corporation - Pittsburgh PA

International Classification:

H01L 2980
H01L 2948
H01L 2348

US Classification:

357 22

Abstract:

A high frequency, Schottky barrier gate, field-effect transistor is provided with a substantially constant impedance over a broadband of frequencies. The transistor is comprised of a thin dielectric layer providing an effective dielectric constant at gate and drain contacts greater than. sqroot. 2. The dielectric layer is supported on the major surface of a conductor substrate, and is preferably 5 microns in thickness and has a dielectric constant greater than about 5. The transistor is also comprised of a thin semiconductor layer of less than about 2 microns in thickness at least at gate portions with an N-type concentration of between about 5. times. 10. sup. 14 and 5. times. 10. sup. 17 carriers/cm. sup. 3. The gate contact of the transistor is an elongated Schottky barrier contact adjoining the semiconductor layer spaced between elongated source and drain contacts which make ohmic contact with the semiconductor layer.