Max K Lau

US Patent:

7571420, Aug 4, 2009

Filed:

Feb 16, 2007

Appl. No.:

11/676258

Inventors:

Alan Wong - San Jose CA,
Jeff Drautz - Rio Rancho NM,
Joseph D. Shindler - Gaston OR,
Max Lau - San Ramon CA,
George Chen - Los Gatos CA,

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

G06F 17/50

US Classification:

716 19, 716 2, 716 11

Abstract:

The present invention describes a method including: determining field-clustering scheme; selecting initial sample plan; establishing initial model of overlay, the initial model of overlay comprising components; and establishing efficient model of overlay from the initial model of overlay including: constructing matrices; identifying redundant components and eliminating the redundant components; and identifying highly-correlated components and determining whether to eliminate the highly-correlated components.

US Patent:

2006007, Apr 6, 2006

Filed:

Sep 30, 2004

Appl. No.:

10/956608

Inventors:

Alan Wong - San Jose CA,
Jeff Drautz - Rio Rancho NM,
Joseph Shindler - Gaston OR,
Max Lau - San Ramon CA,
George Chen - Los Altos CA,

International Classification:

G06F 17/10
G06F 7/60
G06F 9/45
G06F 17/50

US Classification:

703002000, 716002000, 716009000, 716020000

Abstract:

The present invention describes a method including: determining field-clustering scheme; selecting initial sample plan; establishing initial model of overlay, the initial model of overlay comprising components; and establishing efficient model of overlay from the initial model of overlay including: constructing matrices; identifying redundant components and eliminating the redundant components; and identifying highly-correlated components and determining whether to eliminate the highly-correlated components.

US Patent:

2011015, Jun 30, 2011

Filed:

Dec 30, 2009

Appl. No.:

12/655460

Inventors:

Bennett Olson - Livermore CA,
Max Lau - San Ramon CA,
Cheng-hsin Ma - San Jose CA,
Jian Ma - San Jose CA,
Andrew T. Jamieson - San Jose CA,

International Classification:

G03F 1/00
G03F 7/20

US Classification:

430 5, 430322, 430323, 430324

Abstract:

A phase shift photomask blank has a quartz substrate, a lower chrome layer, a light-absorbing MoSi layer, and an upper chrome layer. This mask can be patterned in various ways to form a patterned photomask with both phase shift and binary areas.