Mark Antonio Prelas

US Patent:

6527854, Mar 4, 2003

Filed:

Dec 14, 2000

Appl. No.:

09/719736

Inventors:

Mark A. Prelas - Columbia MO 65203
Fariborz Golshani - Cupertino CA 95014

International Classification:

C30B 2508

US Classification:

117 79, 117 2, 117929, 423446, 4272553

Abstract:

A low free energy method for more rapidly diffusing an impurity as exemplified by boron, into a natural or synthetic diamond or other crystalline element in powdered or granular form, without degradation of the crystalline structure. The present method includes the steps of providing a mixture of the diamond or other crystalline element and the impurity in a solid phase; treating the mixture to bring the impurity into conforming contact with the outer surface of the crystalline element; and heating the mixture to a temperature between about 200Â C. and about 2000Â C. As an example, a diamond is disclosed having boron as an impurity diffused into the crystalline structure thereof by the present method, at a ratio of from about 0. 1 part of the impurity per 1 million parts of the diamond to about 600 parts of the impurity per 1 million parts of the diamond.

US Patent:

7649359, Jan 19, 2010

Filed:

Dec 13, 2006

Appl. No.:

11/639405

Inventors:

Mark A. Prelas - Columbia MO, US
Tushar K. Ghosh - Columbia MO, US
Dabir Viswanath - Columbia MO, US
Sudarshan K. Loyalka - Columbia MO, US

Assignee:

The Curators of the University of Missouri - Columbia MO

International Classification:

G01N 27/00

US Classification:

324452, 324 711

Abstract:

A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured.

US Patent:

8394711, Mar 12, 2013

Filed:

Jun 6, 2011

Appl. No.:

13/154000

Inventors:

Mark A. Prelas - Columbia MO, US
Tushar K. Ghos - Columbia MO, US
Dabir S. Viswanath - Columbia MO, US
Sudarshan Loyalka - Columbia MO, US

Assignee:

The Curators of the University of Missouri - Columbia MO

International Classification:

H01L 21/22

US Classification:

438558, 438553, 257E21334, 257E21065

Abstract:

Various embodiments of the present disclosure provide a method of simultaneously co-doping a wide band gap material with p-type and n-type impurities to create a p-n junction within the resulting wide band gap composite material. The method includes disposing a sample comprising a dopant including both p-type and n-type impurities between a pair of wide band gap material films and disposing the sample between a pair of opposing electrodes; and subjecting the sample to a preselected vacuum; and heating the sample to a preselected temperature; and applying a preselected voltage across the sample; and subjecting the sample to at least one laser beam having a preselected intensity and a preselected wavelength, such that the p-type and n-type impurities of the dopant substantially simultaneously diffuse into the wide band gap material films resulting in a wide band gap compound material comprising a p-n junction.

US Patent:

8552616, Oct 8, 2013

Filed:

Oct 25, 2006

Appl. No.:

12/086219

Inventors:

Mark A. Prelas - Columbia MO, US

Assignee:

The Curators of the University of Missouri - Columbia MO

International Classification:

G21H 1/06
G21H 1/00

US Classification:

310303, 136253, 438 56, 257E2112

Abstract:

A micro-scale power source and method includes a semiconductor structure having an n-type semiconductor region, a p-type semiconductor region and a p-n junction. A radioisotope provides energy to the p-n junction resulting in electron-hole pairs being formed in the n-type semiconductor region and p-type semiconductor region, which causes electrical current to pass through p-n junction and produce electrical power.

US Patent:

20110199015, Aug 18, 2011

Filed:

Feb 12, 2010

Appl. No.:

12/705322

Inventors:

Adrian E. Mendez - Aiken SC, US
Mark A. Prelas - Columbia MO, US
Tushar K. Ghosh - Columbia MO, US

Assignee:

THE CURATORS OF THE UNIVERSITY OF MISSOURI - Columbia MO

International Classification:

H05B 37/00
C09K 11/61
C09K 11/68

US Classification:

315291, 2523014 H

Abstract:

The present disclosure provides a new diamond composite comprising a diamond material doped with a preselected transition metal or metal compounds as an illumination source with broadband white light luminosity, high efficiency, and enhanced life span. The present disclosure also provides a new method of diffusing dopants (such as transition metal or metal compounds) into an intended material (such as a diamond material).

US Patent:

20130054177, Feb 28, 2013

Filed:

Jul 2, 2012

Appl. No.:

13/540151

Inventors:

Daniel E. Montenegro - Scotia NY, US
Jason B. Rothenberger - Colonie NY, US
Mark A. Prelas - Columbia MO, US
Annie Tipton - San Antonio TX, US

Assignee:

THE CURATORS OF THE UNIVERSITY OF MISSOURI - Columbia MO

International Classification:

G01R 31/26
G06F 19/00

US Classification:

702108

Abstract:

A method for detecting surface and bulk deep states in semiconductor materials is provided. In various embodiments, the method comprises configuring a detection circuit of charge based deep level transient spectrometer in one of a parallel mode and a series mode by controlling the configuration of a switching circuit of the detection circuit. The method additionally comprises generating digitized voltage charge outputs of a device under test utilizing the detection circuit as controlled via execution of an analog-to-digital conversion and timing program by a control system of the charge based deep level transient spectrometer. Furthermore, the method comprises obtaining desired information about deep level transients of the device under test based on the digitized voltage charge outputs via execution of a control system operable to execute a Q-DLTS data analysis program by the control system.

US Patent:

52395510, Aug 24, 1993

Filed:

Feb 19, 1992

Appl. No.:

7/837733

Inventors:

Rosemary S. Roberts - Columbia MO
David J. Mencin - Chesterfield MO
Mark A. Prelas - Columbia MO

International Classification:

H01S 322

US Classification:

372 57

Abstract:

A solid-state laser and method of operating the laser is described having a microwave driven (MWD) visible excimer fluorescence source for exciting a solid-state laser. The laser of this invention provides an efficient, compact, and tunable solid-state laser preferably for use with tunable vibronic laser crystals.

US Patent:

51146614, May 19, 1992

Filed:

Jan 16, 1991

Appl. No.:

7/641831

Inventors:

Mark A. Prelas - Columbia MO

Assignee:

The United States of America as represented by the United States
Department of Energy - Washington DC

International Classification:

H01S 309

US Classification:

376146

Abstract:

An apparatus is provided for driving a solid state laser by a nuclear powered fluorescence source which is located remote from the fluorescence source. A nuclear reaction produced in a reaction chamber generates fluorescence or photons. The photons are collected from the chamber into a waveguide, such as a fiber optic waveguide. The waveguide transports the photons to the remote laser for exciting the laser.