Lee Edward Trimble

US Patent:

60156449, Jan 18, 2000

Filed:

Nov 12, 1998

Appl. No.:

9/190351

Inventors:

Raymond Andrew Cirelli - Hillsborough NJ
Masis Mkrtchyan - Stirling NJ
Lee Edward Trimble - Orlando FL
George Patrick Watson - Avon NJ
David Lee Windt - Berkeley Heights NJ

Assignee:

Lucent Technologies Inc. - Murray Hill NJ

International Classification:

G03F 900

US Classification:

430 30

Abstract:

A process for device fabrication is disclosed. In the process, optical lithography is used to introduce an image of a desired pattern into an energy sensitive material. In the process, a filter element is provided. The filter element has at least two regions of different transmittance, each region denominated an aperture. The regions are selected by obtaining information about the desired pattern and an optical lithographic tool that will be used to introduce the image of the desired pattern into the energy sensitive resist material. A filter element that provides an image that, when developed, will provide features with dimensions within acceptable process tolerances is then designed. The filter element is designed by modeling the effects of each aperture of the filter element on the intensity profile of an image of the desired pattern. The combined effect of the apertures is then determined.

US Patent:

44067097, Sep 27, 1983

Filed:

Jun 24, 1981

Appl. No.:

6/276932

Inventors:

George K. Celler - Summit NJ
Harry J. Leamy - Summit NJ
Lee E. Trimble - Hillsborough NJ

Assignee:

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

International Classification:

H01L 21263

US Classification:

148 15

Abstract:

Crystal grain size in a material is increased by scanning the material with an appropriately directed energy beam. Short-term oscillation in the scan, and a particular temperature gradient configuration in the wake of the scan, results in growth of large-grain crystallites.

US Patent:

48351130, May 30, 1989

Filed:

Nov 23, 1987

Appl. No.:

7/123695

Inventors:

George K. Celler - New Providence NJ
Lee E. Trimble - Hillsborough NJ

Assignee:

American Telephone and Telegraph Company, AT&T Bell Laboratories - Murry Hill NJ

International Classification:

H01L 21225

US Classification:

437 37

Abstract:

In dielectrically isolated devices a buried conducting layer adjacent to the dielectric layer is produced by a drift effect. In particular, if arsenic antimony and/or phosphorus is present in the silicon dioxide layer, it is caused to drift from this layer and enter the adjacent isolated silicon region while maintaining a relatively narrow spatial configuration. Thus, a discrete buried highly conductive layer is formed. This configuration is particularly useful for transistor configurations such as utilized in switching applications.

US Patent:

41743776, Nov 13, 1979

Filed:

May 25, 1978

Appl. No.:

5/909381

Inventors:

Lee E. Trimble - Clark NJ
Rudolf J. H. Voorhoeve - Summit NJ

Assignee:

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

International Classification:

C01C 300
C01C 314

US Classification:

423365

Abstract:

The use of a reaction mixture of carbon monoxide, an oxide of nitrogen such as nitric oxide, and a source of hydrogen when passed over a hydrogenation catalyst produces cyanate compounds, e. g. , ammonium cyanate and isocyanic acid. The reaction conditions chosen determine the relative amounts of the various cyanate compounds to be formed. When the formation of ammonium cyanate is desired, the addition of ammonia to the reaction mixture reduces the amount of nitric oxide reactant necessary, while enhancing the efficiency of ammonium cyanate production. When a palladium or iridium catalyst is used, the production of isocyanic acid is favored.

US Patent:

50513265, Sep 24, 1991

Filed:

May 26, 1989

Appl. No.:

7/358312

Inventors:

George K. Celler - New Providence NJ
Lee E. Trimble - Hillsborough NJ

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

G03F 900

US Classification:

430 5

Abstract:

A mask for X-ray lithography is produced by initially forming a thin layer of polycrystalline silicon on a silicon oxide containing substrate. A portion of the substrate at the periphery of the major surface opposite the silicon layer is masked. The exposed portion of the substrate is removed by an etchant that is selective for silicon oxide containing composition relative to silicon, e. g. aqueous HF. The resulting membrane of silicon on a peripheral region of silicon oxide containing compositions is in tensile stress as required for lithography, but is robust. Metal, X-ray absorbing patterns are formed on the silicon by standard lithographic procedures.

US Patent:

45818142, Apr 15, 1986

Filed:

Dec 13, 1984

Appl. No.:

6/681270

Inventors:

George K. Celler - New Providence NJ
Pradip K. Roy - Wyomissing Hills PA
Donald G. Schimmel - Reading PA
Lee E. Trimble - Hillsborough NJ

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01L 2120
H01L 2176

US Classification:

29576W

Abstract:

The efficacy of dielectrically isolated device formation on a substrate is substantially enhanced through a specific set of processing steps. In particular, before silicon oxide regions, e. g. , gate oxide regions, are produced, bulk polycrystalline areas are heat treated to substantially increase their polycrystalline silicon grain size.