Tighe A. Spurlin - Portland OR, US Charles L. Merrill - Portland OR, US Ludan Huang - Tigard OR, US Matthew Thorum - Portland OR, US Lee Brogan - Tualatin OR, US James E. Duncan - Beaverton OR, US Frederick D. Wilmot - Gladstone OR, US Marshall R. Stowell - Wilsonville OR, US Steven T. Mayer - Lake Oswego OR, US Haiying Fu - Camas WA, US David W. Porter - Sherwood OR, US Shantinath Ghongadi - Tigard OR, US Jonathan D. Reid - Sherwood OR, US Hyosang S. Lee - Tigard OR, US Mark J. Willey - Portland OR, US
International Classification:
C25D 21/14 C25D 17/00 C25D 3/38
US Classification:
205157, 204252, 20419601, 204237, 20419638
Abstract:
Apparatus and methods for electroplating metal onto substrates are disclosed. The electroplating apparatus comprise an electroplating cell and at least one oxidization device. The electroplating cell comprises a cathode chamber and an anode chamber separated by a porous barrier that allows metal cations to pass through but prevents organic particles from crossing. The oxidation device (ODD) is configured to oxidize cations of the metal to be electroplated onto the substrate, which cations are present in the anolyte during electroplating. In some embodiments, the ODD is implemented as a carbon anode that removes Cu(I) from the anolyte electrochemically. In other embodiments, the ODD is implemented as an oxygenation device (OGD) or an impressed current cathodic protection anode (ICCP anode), both of which increase oxygen concentration in anolyte solutions. Methods for efficient electroplating are also disclosed.
Performance Predictors For Semiconductor-Manufacturing Processes
- Fremont CA, US Michal Danek - Cupertino CA, US Ravi Vellanki - San Jose CA, US Sanjay Gopinath - Fremont CA, US David g. Cohen - San Jose CA, US Sassan Roham - San Ramon CA, US Benjamin Allen Haskell - Pleasanton CA, US Lee j. Brogan - Newberg OR, US
International Classification:
G05B 19/418 G05B 13/02
Abstract:
Methods, systems, and computer programs are presented for predicting the performance of semiconductor manufacturing equipment operations. One method includes an operation for obtaining machine-learning (ML) models, each model related to predicting a performance metric for an operation of a semiconductor manufacturing tool. Further, each ML model utilizes features defining inputs for the ML model. The method further includes an operation for receiving a process definition for manufacturing a product with the semiconductor manufacturing tool. One or more ML models are utilized to estimate a performance of the process definition used in the semiconductor manufacturing tool. Additionally, the method includes presenting, on a display, results showing the estimate of the performance of the manufacturing of the product. In some aspects, the use of hybrid models improves the predictive accuracy of the system by augmenting the capabilities of data-driven models with the reinforcement provided by the physics-based models.
Monitoring Surface Oxide On Seed Layers During Electroplating
- Fremont CA, US Lee J. Brogan - Newberg OR, US Tighe A. Spurlin - Portland OR, US Shantinath Ghongadi - Tigard OR, US Jonathan David Reid - Sherwood OR, US Manish Ranjan - Sherwood OR, US Bryan Pennington - Sherwood OR, US Clifford Raymond Berry - West Linn OR, US
International Classification:
C25D 21/12 C25D 7/12 C25D 5/34
Abstract:
Methods and apparatus for determining whether a substrate includes an unacceptably high amount of oxide on its surface are described. The substrate is typically a substrate that is to be electroplated. The determination may be made directly in an electroplating apparatus, during an initial portion of an electroplating process. The determination may involve immersing the substrate in electrolyte with a particular applied voltage or applied current provided during or soon after immersion, and recording a current response or voltage response over this same timeframe. The applied current or applied voltage may be zero or non-zero. By comparing the current response or voltage response to a threshold current, threshold voltage, or threshold time, it can be determined whether the substrate included an unacceptably high amount of oxide on its surface. The threshold current, threshold voltage, and/or threshold time may be selected based on a calibration procedure.
Monitoring Surface Oxide On Seed Layers During Electroplating
- Fremont CA, US Lee J. Brogan - Newberg OR, US Tighe A. Spurlin - Portland OR, US Shantinath Ghongadi - Tigard OR, US Jonathan David Reid - Sherwood OR, US Manish Ranjan - Sherwood OR, US Bryan Pennington - Sherwood OR, US Clifford Raymond Berry - West Linn OR, US
International Classification:
C25D 21/12 H01L 21/67 C25D 7/12 C25D 5/34
Abstract:
Methods and apparatus for determining whether a substrate includes an unacceptably high amount of oxide on its surface are described. The substrate is typically a substrate that is to be electroplated. The determination may be made directly in an electroplating apparatus, during an initial portion of an electroplating process. The determination may involve immersing the substrate in electrolyte with a particular applied voltage or applied current provided during or soon after immersion, and recording a current response or voltage response over this same timeframe. The applied current or applied voltage may be zero or non-zero. By comparing the current response or voltage response to a threshold current, threshold voltage, or threshold time, it can be determined whether the substrate included an unacceptably high amount of oxide on its surface. The threshold current, threshold voltage, and/or threshold time may be selected based on a calibration procedure.
Method And Apparatus For Electroplating Semiconductor Wafer When Controlling Cations In Electrolyte
- Fremont CA, US Charles Lorenzo Merrill - Portland OR, US Ludan Huang - King City OR, US Matthew Sherman Thorum - Tigard OR, US Lee J. Brogan - Newberg OR, US James E. Duncan - Beaverton OR, US Frederick Dean Wilmot - Gladstone OR, US Robert Marshall Stowell - Wilsonville OR, US Steven T. Mayer - Aurora OR, US Haiying Fu - Camas WA, US David W. Porter - Sherwood OR, US Shantinath Ghongadi - Tigard OR, US Jonathan David Reid - Sherwood OR, US Hyosang S. Lee - Tigard OR, US Mark J. Willey - Portland OR, US
Apparatus and methods for electroplating metal onto substrates are disclosed. The electroplating apparatus comprise an electroplating cell and at least one oxidization device. The electroplating cell comprises a cathode chamber and an anode chamber separated by a porous barrier that allows metal cations to pass through but prevents organic particles from crossing. The oxidation device (ODD) is configured to oxidize cations of the metal to be electroplated onto the substrate, which cations are present in the anolyte during electroplating. In some embodiments, the ODD is implemented as a carbon anode that removes Cu(I) from the anolyte electrochemically. In other embodiments, the ODD is implemented as an oxygenation device (OGD) or an impressed current cathodic protection anode (ICCP anode), both of which increase oxygen concentration in anolyte solutions. Methods for efficient electroplating are also disclosed.
Lam Research
Senior Process Engineer
Uc Berkeley Aug 2006 - Aug 2011
Graduate Student Researcher
Education:
University of California, Berkeley 2006 - 2011
Doctorates, Doctor of Philosophy, Philosophy, Chemistry
University of Tennessee, Knoxville 2002 - 2006
Bachelors, Bachelor of Arts, Bachelor of Science, Classics, Chemistry, Linguistics, Classical Languages
University of California
Skills:
Nanotechnology Semiconductors Thin Films Materials Science Scanning Electron Microscopy Characterization