Search

Larue N Dunkleberger

age ~74

from Pennsburg, PA

Also known as:
  • Larue Sharon Dunkleberger
  • Larue D Dunkleberger
  • Sharon Dunkleberger
  • Dunk Dunkleberger
  • Dunkleberger Dunk

Larue Dunkleberger Phones & Addresses

  • Pennsburg, PA
  • 337 Fireline Rd, Kintnersville, PA 18930 • 610-346-7465
  • Galloway, OH
  • Somerset, NJ
  • 337 Fireline Rd, Kintnersville, PA 18930 • 610-217-1401

Emails

Us Patents

  • Multi-Frequency Thin Film Resonators

    view source
  • US Patent:
    6657517, Dec 2, 2003
  • Filed:
    Dec 20, 2001
  • Appl. No.:
    10/028191
  • Inventors:
    Bradley Paul Barber - Chatham NJ
    Peter Ledel Gammel - Milburn NJ
    LaRue Norman Dunkleberger - Kintnersville PA
  • Assignee:
    Agere Systems, Inc. - Allentown PA
  • International Classification:
    H03H 9205
  • US Classification:
    333187, 333189, 333191, 29 2535, 310312
  • Abstract:
    Differing metallic electrodes having the same or differing thickness are formed at different locations on a support structure and/or on a single thickness film of piezoelectric material in order to form a multiple frequency resonator device having greatly separated acoustic resonance frequencies. A plurality of multiple frequency resonators can be combined to form a blank of frequency selective devices in order to handle the many different RF bands, at widely varying frequencies, that wireless communication technologies demand today.
  • Process For Packaging Electronic Devices Using Thin Bonding Regions

    view source
  • US Patent:
    6890445, May 10, 2005
  • Filed:
    Dec 13, 2001
  • Appl. No.:
    10/017942
  • Inventors:
    Bradley Paul Barber - Chatham NJ, US
    LaRue Norman Dunkleberger - Kintnersville PA, US
    Jason Paul Goodelle - Bethlehem PA, US
    Thomas Herbert Shilling - Macungie PA, US
  • Assignee:
    Agere Systems, Inc. - Allentown PA
  • International Classification:
    H01L021/302
  • US Classification:
    216 2, 216 13, 216 17, 216 20, 216 33, 216 38, 216 52, 216 88, 438106, 438107, 438125
  • Abstract:
    In the method, a cap wafer surface is lithographically etched at time of fabrication, so that a raised ridge onto which bonding material is placed is formed near a perimeter of a desired cavity region. This is done in order to reduce the bonding area between the cap wafer and electronic device wafers, so as to provide a better defined standoff. In another aspect of the method, the cap wager surface is lithographically etched to form recesses or trenches near the perimeter of a cavity region, each recess being filled with a sealing material, and polished if necessary to be flush with the cap wafer surface. Thereafter, the cap wafer surface is etched so that the filled recesses become the raised ridges which are used to bond a cap wafer to an electronic device wafer.
  • Photolithographic Technique For Depositing Thin Films

    view source
  • US Patent:
    42185327, Aug 19, 1980
  • Filed:
    Oct 13, 1977
  • Appl. No.:
    5/841797
  • Inventors:
    LaRue N. Dunkleberger - High Bridge NJ
  • Assignee:
    Bell Telephone Laboratories, Incorporated - Murray Hill NJ
  • International Classification:
    G03C 500
    G03C 1100
  • US Classification:
    430314
  • Abstract:
    A lift-off mask for the patterned deposition of thin films comprises a three layer sandwich of photoresist-aluminum-photoresist on a substrate. Deposition occurs through an opening in the top photoresist layer and through larger size (i. e. , undercut) openings in the aluminum and bottom photoresist layers. The top layer of photoresist remains on the mask during deposition and defines the pattern, the bottom photoresist is fully exposed and in the openings provides an undercut which prevents edge tearing during lift-off, and the aluminum layer (typically 50-200 Angstroms thick) protects the bottom layer of photoresist from dissolving during formation of the top photoresist layer. Also described is a technique in which the edges of thin films are tapered by depositing them from a direction oblique to the substrate surface and by rotating the substrate during deposition. These techniques are specifically discussed in the context of fabricating Josephson junction devices.

Get Report for Larue N Dunkleberger from Pennsburg, PA, age ~74
Control profile