Kurt A Pfluger

Address:

115 Wilder Ave, Los Gatos, CA 95030

Phone:

510-438-9945

VIN:

JM3TB3DV2B0330635

Make:

MAZDA

Model:

CX-9

Year:

2011

US Patent:

20140206138, Jul 24, 2014

Filed:

Mar 15, 2013

Appl. No.:

13/843216

Inventors:

4DS, Inc. - , US
Dongmin Chen - Saratoga CA, US
Lee Cleveland - Santa Clara CA, US
Kurt Pfluger - Monte Sereno CA, US

Assignee:

4DS, Inc. - Fremont CA

International Classification:

H01L 29/267

US Classification:

438104

Abstract:

A memory device is disclosed. The memory device comprises a first metal layer and a first metal oxide layer coupled to the first metal layer. The first metal layer is also coupled to a second metal oxide, which in turn is couple to a second metal layer. The formation of the first metal oxide layer may occur in-situ when the first metal oxide layer has a Gibbs free energy that is lower than the Gibbs free energy for the formation of the second metal oxide layer. Control of the oxygen vacancy or ion concentrations of the first metal oxide layer and the second metal oxide layer is utilized in the information and the operation of the memory device. Selection of a dielectric constant and a thickness of the first and second metal oxide layer may be utilized to result in similar electrical field stress across the first metal oxide layer and the second metal oxide layer and improve the cycling robustness and data retention for the memory device.

US Patent:

20140117298, May 1, 2014

Filed:

Mar 15, 2013

Appl. No.:

13/831935

Inventors:

- Fremont CA, US
Lee Cleveland - Santa Clara CA, US
Seshubabu Desu - Vestal NY, US
Kurt Pfluger - Monte Sereno CA, US

Assignee:

4DS, Inc. - Fremont CA

International Classification:

H01L 45/00

US Classification:

257 2, 438382

Abstract:

A resistive memory device is disclosed. The memory device comprises one or mo re metal oxide layers. An oxygen vacancy or ion concentrations of the one or more metal oxide layer is controlled in the formation and the operation of the memory device to provide robust memory operation.