Kenneth Reber Week

US Patent:

45871388, May 6, 1986

Filed:

Nov 9, 1984

Appl. No.:

6/670161

Inventors:

Leopoldo D. Yau - Durham OR
Robert A. Gasser - Cornelius OR
Kenneth R. Week - Sherwood OR
Jick M. Yu - Beaverton OR
David D. Chin - Aloha OR

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

B05D 512
G03C 726

US Classification:

427 88

Abstract:

A process for the reduction of defect formation in conductive layers of semiconductor bodies during patterning, alloying and passivation. A film of low temperature spin-on-glass containing dye is formed on the conductive layer prior to patterning and any high temperature process greater than 200 degrees C. Hermetic passivation is achieved by depositing on the conductive layer a composite film consisting of a lower, tensile layer and an upper, compressive layer with the net force of the passivation film being tensile.