Kenji Ohmori from 1837 Orchard St, Urbana, IL 61801, Phone: 217-367-4261

About:

Born:

1962

Work:

Company:

University of Tokyo faculty • Tokyo Institute of Technology • Tohoku University

Position:

Physicist

Education:

Studied at:

University of Tokyo

Area of science:

Nanotechnology

Specialty:

Chemist

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Method For Large-Scale Fabrication Of Atomic-Scale Structures On Material Surfaces Using Surface Vacancies
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US Patent:

6762131, Jul 13, 2004
Filed:

Apr 13, 2002
Appl. No.:

10/123031
Inventors:

Chong Wee Lim - Urbana IL
Kenji Ohmori - Urbana IL
Ivan Georgiev Petrov - Champaign IL
Joseph E. Greene - Champaign IL
Assignee:

The Board of Trustees of the University of Illinois - Urbana IL
International Classification:

H01L 21302
US Classification:

438719, 438597, 438735, 438795
Abstract:

A method for forming atomic-scale structures on a surface of a substrate on a large-scale includes creating a predetermined amount of surface vacancies on the surface of the substrate by removing an amount of atoms on the surface of the material corresponding to the predetermined amount of the surface vacancies. Once the surface vacancies have been created, atoms of a desired structure material are deposited on the surface of the substrate to enable the surface vacancies and the atoms of the structure material to interact. The interaction causes the atoms of the structure material to form the atomic-scale structures.

Method For Forming A Strained Semiconductor Substrate
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US Patent:

20040224469, Nov 11, 2004
Filed:

May 8, 2003
Appl. No.:

10/434402
Inventors:

Chong Lim - Urbana IL, US
Sukwon Hong - Urbana IL, US
Kenneth Bratland - Mahomet IL, US
Timothy Spila - Savoy IL, US
Benjamin Cho - Morris IL, US
Kenji Ohmori - Urbana IL, US
Joseph Greene - Champaign IL, US
Assignee:

The Board of Trustees of the University of Illinois
International Classification:

H01L021/336
US Classification:

438/285000, 438/296000
Abstract:

A method of manufacturing a strained semiconductor substrate includes the steps of provide a Si substrate and depositing a strained SiGelayer on the Si substrate. The Si substrate and strained SiGelayer are subjected to rapid thermal annealing which forms a relaxed SiGelayer on the Si substrate. The method further includes the steps of depositing a buffer SiGelayer on the relaxed SiGelayer, and depositing Si on the buffer SiGelayer. The buffer SiGelayer causes the deposited Si to form a strained Si layer on the buffer SiGelayer with the combined layers forming the strained semiconductor substrate.

Kenji Ohmori