John E Dinan

US Patent:

6861208, Mar 1, 2005

Filed:

Mar 18, 2003

Appl. No.:

10/389760

Inventors:

J. David Benson - Burke VA, US
John H. Dinan - Alexandria VA, US
Michael Martinka - Springfield VA, US
Leo Anthony Almeida - Alexandria VA, US
Phillip R. Boyd - St. Leonard MD, US
Andrew W. Kaleczyc - Alexandria VA, US

Assignee:

The United States of America as represented by the Secretary of the Army - Washington DC

International Classification:

G03F007/26

US Classification:

430322, 430323, 430325, 430331

Abstract:

A lithographic imaging method of the present invention includes the initial step of providing a substrate made from Mercury, Cadmium and Telluride materials (HgCdTe). The HgCdTe substrate is coated with a diazonaphthoquinone (DNQ) Novolak photoresist material to establish an imaging medium. The imaging medium is exposed to an image pattern and then developed in a tetra-methyl ammonium hydroxide (TMAH) solution. The TMAH solution includes a fullerene (C) material dissolved therein to retard the subsequent etching of the imaging medium. The incorporation of fullerene into the photoresist material indirectly via the developing solution avoids the solubility and ultraviolet (UV) absorbance disadvantages inherent in adding fullerenes directly to the photoresist prior to placement on the substrate. After development, the imaging medium is etched to transfer the recorded image pattern to the substrate. The fullerene cooperates with the photoresist material to slow the etching process, which allows for a highly reticulated HgCdTe detectors and IR images having greatly enhanced resolution.

US Patent:

45891923, May 20, 1986

Filed:

Nov 2, 1984

Appl. No.:

6/667699

Inventors:

John H. Dinan - Alexandria VA
William A. Gutierrez - Woodbridge VA

Assignee:

The United States of America as represented by the Secretary of the Army - Washington DC

International Classification:

H01L 21363

US Classification:

29572

Abstract:

A method of making infrared detectors on a substrate of mercury cadmium turide (HgCdTe) or mercury zinc telluride (HgZnTe). The steps include those of preparing the substrate, etching and passivating it, and placing it in the ultra-high vaccuum environment of a molecular beam epitaxy apparatus. While in the apparatus, one or more layers of zinc cadmium telluride (ZnCdTe) are deposited. When the ZnCdTe deposition is finished, the substrate is removed from the apparatus and the detectors are delineated lithographically.

US Patent:

46896503, Aug 25, 1987

Filed:

Oct 3, 1985

Appl. No.:

6/783702

Inventors:

John H. Dinan - Alexandria VA

Assignee:

The United States of America as represented by the Secretary of the Army - Washington DC

International Classification:

H01L 2714
H01L 3100

US Classification:

357 30

Abstract:

Successive layers of a II-VI ternary buffer layer and a II-VI ternary nar-bandpass infrared-absorbing layer are grown by MBE on a III-V binary substrate with low surface defect density. The composition of the buffer layer is chosen to lattice match with the infrared-absorbing layer.

Address:

4 Hawthorne Ave, Nutley, NJ 07110

Phone:

973-667-7781

VIN:

2FMDK4JC5BBA74040

Make:

FORD

Model:

EDGE

Year:

2011