John H Commander

age ~66

from Old Saybrook, CT

Get Report

Also known as:

John M Commander

Phone and address:: 3 Nutmeg Cir, Fenwick, CT 06475
860-388-0575

Connected to:

John Commander Phones & Addresses

3 Nutmeg Cir, Old Saybrook, CT 06475 • 860-388-0575
Middletown, CT
Chester, CT

Work

Company:

Macdermid enthone
Jan 2018
Position:

Retired

Education

Degree:

Master of Business Administration, Masters
School / High School:

University of New Haven

Skills

Six Sigma • Semiconductors • Cross Functional Team Leadership • Polymers • R&D • Design of Experiments • Chemistry

Industries

Semiconductors

Isbn (Books And Publications)

Gilbert White's Year: Passages from The Garden Kalendar & The Naturalist's Journal

view source

Author
John Commander

ISBN #
0192813544

Resumes

John Commander

view source

Location:

Old Saybrook, CT

Industry:

Semiconductors

Work:

Macdermid Enthone
Retired
Enthone
Research Director
Entegris Jun 1, 2006 - Dec 1, 2011
Product Manager

Education:

University of New Haven
Master of Business Administration, Masters Southern Connecticut State University
Master of Science, Masters, Chemistry University of Connecticut
Bachelors, Bachelor of Science, Chemistry

Skills:

Six Sigma
Semiconductors
Cross Functional Team Leadership
Polymers
R&D
Design of Experiments
Chemistry

Us Patents

Defect Reduction In Electrodeposited Copper For Semiconductor Applications
view source
US Patent:

7316772, Jan 8, 2008
Filed:

Mar 5, 2002
Appl. No.:

10/091106
Inventors:

John Commander - Old Saybrook CT, US
Richard Hurtubise - Clinton CT, US
Vincent Paneccasio - Madison CT, US
Xuan Lin - New Haven CT, US
Kshama Jirage - Branford CT, US
Assignee:

Enthone Inc. - West Haven CT
International Classification:

C25D 5/02
C25D 3/38
US Classification:

205123, 205118, 205296
Abstract:

A method for electroplating a copper deposit onto a semiconductor integrated circuit device substrate having submicron-sized features, and a concentrate for forming a corresponding electroplating bath. A substrate is immersed into an electroplating bath formed from the concentrate including ionic copper and an effective amount of a defect reducing agent, and electroplating the copper deposit from the bath onto the substrate to fill the submicron-sized reliefs. The occurrence of protrusion defects from superfilling, surface roughness, and voiding due to uneven growth are reduced, and macro-scale planarity across the wafer is improved.

Defect Reduction In Electrodeposited Copper For Semiconductor Applications
view source
US Patent:

20080121527, May 29, 2008
Filed:

Jan 8, 2008
Appl. No.:

11/971061
Inventors:

John Commander - Old Saybrook CT, US
Richard Hurtubise - Clinton CT, US
Vincent Paneccasio - Madison CT, US
Xuan Lin - Northford CT, US
Kshama Jirage - Branford CT, US
Assignee:

ENTHONE INC. - West Haven CT
International Classification:

C25D 7/12
US Classification:

205157
Abstract:

A method for electroplating a copper deposit onto a semiconductor integrated circuit device substrate having submicron-sized features, and a concentrate for forming a corresponding electroplating bath. A substrate is immersed into an electroplating bath formed from the concentrate including ionic copper and an effective amount of a defect reducing agent, and electroplating the copper deposit from the bath onto the substrate to fill the submicron-sized reliefs. The occurrence of protrusion defects from superfilling, surface roughness, and voiding due to uneven growth are reduced, and macro-scale planarity across the wafer is improved.

Plating Process For Electroless Nickel On Zinc Die Castings
view source
US Patent:

55781870, Nov 26, 1996
Filed:

Oct 19, 1995
Appl. No.:

8/545354
Inventors:

Mark W. Zitko - Meriden CT
John H. Commander - Old Saybrook CT
Victor J. Waldman - Milford CT
Assignee:

Enthone-Omi, Inc. - West Haven CT
International Classification:

C25D 500
US Classification:

205191
Abstract:

A process is provided for plating zinc die cast substrates with an electroless nickel coating comprising depositing an electrolytic zinc layer on the substrate followed by depositing a first electroless nickel layer on the electrolytic zinc layer using a first alkaline electroless nickel bath and then depositing a finish electroless nickel layer on the first electroless nickel layer using an acidic electroless nickel bath. In a preferred embodiment, a second electroless nickel layer is deposited on the first electroless nickel layer using a second alkaline electroless nickel bath. It is preferred that at least one and preferably all of the electroless nickel baths contain an effective amount of antimony ions to enhance bath stability and metal to metal adhesion. Mechanical cleaning of the zinc die casting before plating is preferred.

Alkaline Zinc And Zinc Alloy Electroplating Baths And Processes
view source
US Patent:

54358981, Jul 25, 1995
Filed:

Oct 25, 1994
Appl. No.:

8/328367
Inventors:

John H. Commander - Old Saybrook CT
Victor J. Waldman - Milford CT
Assignee:

Enthone-OMI Inc. - West Haven CT
International Classification:

C25D 322
C25D 356
US Classification:

205245
Abstract:

An aqueous bath for electrodepositing zinc and zinc alloys wherein the alloying metals are selected from the group consisting of iron, cobalt and nickel and containing an effective additive amount of a quaternary ammonium polymer to produce enhanced deposits. A process for electrodepositing zinc and zinc alloys using the baths of the invention is also disclosed.

Bright Tin Electrodeposition Composition
view source
US Patent:

50613510, Oct 29, 1991
Filed:

Jul 23, 1990
Appl. No.:

7/555690
Inventors:

John H. Commander - Old Saybrook CT
Vincent Paneccasio - Madison CT
Assignee:

Enthone-OMI, Inc. - West Haven CT
International Classification:

C25D 330
US Classification:

204 541
Abstract:

A vinyl-pyridine or vinyl-quinoline quaternary derivative is provided to enhance the brightness and operating properties of tin aqueous sulfuric acid plating baths.

Copper Deposition In Wafer Level Packaging Of Integrated Circuits
view source
US Patent:

20210388519, Dec 16, 2021
Filed:

Aug 12, 2021
Appl. No.:

17/400633
Inventors:

- Waterbury CT, US
Kyle Whitten - Hamden CT, US
Vincent Paneccasio, JR. - Madison CT, US
John Commander - Old Saybrook CT, US
Richard Hurtubise - Clinton CT, US
International Classification:

C25D 3/38
C08G 65/24
C08G 65/333
C08G 73/06
H01L 23/00
Abstract:

An electrodeposition composition comprising: (a) a source of copper ions; (b) an acid; (c) a suppressor; and (d) a leveler, wherein the leveler comprises a quaternized dipyridyl compound prepared by reacting a dipyridyl compound with a difunctional alkylating agent or a quaternized poly(epihalohydrin). The electrodeposition composition can be used in a process for forming a copper feature over a semiconductor substrate in wafer level packaging to electrodeposit a copper bump or pillar on an underbump structure of a semiconductor assembly.

Copper Electrodeposition In Microelectronics
view source
US Patent:

20190390356, Dec 26, 2019
Filed:

Sep 21, 2017
Appl. No.:

16/334168
Inventors:

- Waterbury CT, US
Kyle Whitten - Hamden CT, US
Richard Hurtubise - Clinton CT, US
John Commander - Old Saybrook CT, US
Eric Rouya - Oakland CA, US
International Classification:

C25D 3/38
C25D 7/12
C25D 17/00
Abstract:

An electrolytic plating composition for superfilling submicron features in a semiconductor integrated circuit device and a method of using the same. The composition comprises (a) a source of copper ions to electrolytically deposit copper onto the substrate and into the electrical interconnect features, and (b) a suppressor comprising at least three amine sites, said polyether comprising a block copolymer substituent comprising propylene oxide (PO) repeat units and ethylene oxide (EO) repeat units, wherein the number average molecular weight of the suppressor compound is between about 1,000 and about 20,000.

Copper Deposition In Wafer Level Packaging Of Integrated Circuits
view source
US Patent:

20190368064, Dec 5, 2019
Filed:

Sep 20, 2017
Appl. No.:

16/334098
Inventors:

- Waterbury CT, US
Kyle Whitten - Hamden CT, US
Vincent Paneccasio, Jr. - Madison CT, US
John Commander - Old Saybrook CT, US
Richard Hurtubise - Clinton CT, US
International Classification:

C25D 3/38
H01L 23/00
C08G 73/06
C08G 65/24
C08G 65/333
Abstract:

An electrodeposition composition comprising: (a) a source of copper ions; (b) an acid; (c) a suppressor, and (d) a leveler, wherein the leveler comprises a quaternized dipyridyl compound prepared by reacting a dipyridyl compound with a difunctional alkylating agent or a quaternized poly(epihalohydrin). The electrodeposition composition can be used in a process for forming a copper feature over a semiconductor substrate in wafer level packaging to electrodeposit a copper bump or pillar on an underbump structure of a semiconductor assembly.