Jerry Dean Olson

US Patent:

7229498, Jun 12, 2007

Filed:

Oct 29, 2002

Appl. No.:

10/532540

Inventors:

Andrew G. Norman - Evergreen CO, US
Jerry M. Olson - Lakewood CO, US

Assignee:

Midwest Research Institute - Kansas City MO

International Classification:

C30B 23/04

US Classification:

117 89, 117 90, 117 93, 117 95, 117102, 117104, 117105

Abstract:

Nanostructures () and methods for production thereof by phase separation during metal organic vapor-phase epitaxy (MOVPE). An embodiment of one of the methods may comprise providing a growth surface in a reaction chamber and introducing a first mixture of precursor materials into the reaction chamber to form a buffer layer () thereon. A second mixture of precursor materials may be provided into the reaction chamber to form an active region () on the buffer layer (), wherein the nanostructure () is embedded in a matrix () in the active region (). Additional steps are also disclosed for preparing the nanostructure () product for various applications.

US Patent:

20120032148, Feb 9, 2012

Filed:

Apr 13, 2010

Appl. No.:

13/264444

Inventors:

Jerry M. Olson - Lakewood CO, US

Assignee:

SOL VOLTAICS AB - Lund

International Classification:

H01L 31/0352
B82Y 15/00

US Classification:

257 21, 257 9, 257E31033, 977762, 977948, 977954

Abstract:

A multi junction photovoltaic cell for converting light into electrical energy, comprising a substrate () having a surface (), wherein a region () at the surface () of the substrate () is doped such that a first p-n junction is formed in the substrate (). The photovoltaic cell has a nanowire () that is arranged on the surface () of the substrate () at a position where the doped region () is located in the substrate (), such that a second p-n junction is formed at the nanowire () and in series connection with the first p-n junction.

US Patent:

62814265, Aug 28, 2001

Filed:

Jul 13, 2000

Appl. No.:

9/615297

Inventors:

Jerry M. Olson - Lakewood CO
Sarah R. Kurtz - Golden CO
Daniel J. Friedman - Lakewood CO

Assignee:

Midwest Research Institute - Kansas City MO

International Classification:

H01L 2500

US Classification:

136249

Abstract:

A multi-junction, monolithic, photovoltaic solar cell device is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The solar cell device comprises a plurality of semiconductor cells, i. e. , active p/n junctions, connected in tandem and deposited on a substrate fabricated from GaAs or Ge. To increase efficiency, each semiconductor cell is fabricated from a crystalline material with a lattice constant substantially equivalent to the lattice constant of the substrate material. Additionally, the semiconductor cells are selected with appropriate band gaps to efficiently create photovoltage from a larger portion of the solar spectrum. In this regard, one semiconductor cell in each embodiment of the solar cell device has a band gap between that of Ge and GaAs. To achieve desired band gaps and lattice constants, the semiconductor cells may be fabricated from a number of materials including Ge, GaInP, GaAs, GaInAsP, GaInAsN, GaAsGe, BGaInAs, (GaAs)Ge, CuInSSe, CuAsSSe, and GaInAsNP. To further increase efficiency, the thickness of each semiconductor cell is controlled to match the photocurrent generated in each cell.

US Patent:

53165934, May 31, 1994

Filed:

Nov 16, 1992

Appl. No.:

7/977109

Inventors:

Jerry M. Olson - Lakewood CO
Sarah R. Kurtz - Golden CO

Assignee:

Midwest Research Institute - Kansas City MO

International Classification:

H01L 31072
H01L 310304

US Classification:

136262

Abstract:

A high-efficiency heterojunction solar cell wherein a thin emitter layer (preferably Ga. sub. 52 In. sub. 48 P) forms a heterojunction with a GaAs absorber layer. A passivating window layer of defined composition is disposed over the emitter layer. The conversion efficiency of the solar cell is at least 25. 7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the window layer.

US Patent:

53424530, Aug 30, 1994

Filed:

Nov 13, 1992

Appl. No.:

7/976191

Inventors:

Jerry M. Olson - Lakewood CO

Assignee:

Midwest Research Institute - Kansas City MO

International Classification:

H01L 31072

US Classification:

136262

Abstract:

A high-efficiency single heterojunction solar cell wherein a thin emitter layer (preferably Ga. sub. 52 In. sub. 48 P) forms a heterojunction with a GaAs absorber layer. The conversion effiency of the solar cell is at least 25. 7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the emitter layer.

US Patent:

51667614, Nov 24, 1992

Filed:

Apr 1, 1991

Appl. No.:

7/678230

Inventors:

Jerry M. Olson - Lakewood CO
Sarah R. Kurtz - Golden CO

Assignee:

Midwest Research Institute - Kansas City MO

International Classification:

H01L 3300

US Classification:

257 46

Abstract:

A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect.

US Patent:

44812329, Nov 6, 1984

Filed:

May 27, 1983

Appl. No.:

6/498999

Inventors:

Jerry M. Olson - Lakewood CO

Assignee:

The United States of America as represented by the Department of Energy - Washington DC

International Classification:

B05D 314
C23C 1100
C01B 3302

US Classification:

427 51

Abstract:

A method for producing high purity silicon includes forming a copper silie alloy and positioning the alloy within an enclosure. A filament member is also placed within the enclosure opposite the alloy. The enclosure is then filled with a chemical vapor transport gas adapted for transporting silicon. Finally, both the filament member and the alloy are heated to temperatures sufficient to cause the gas to react with silicon at the alloy surface and deposit the reacted silicon on the filament member. In addition, an apparatus for carrying out this method is also disclosed.

US Patent:

46670599, May 19, 1987

Filed:

Oct 22, 1985

Appl. No.:

6/790600

Inventors:

Jerry M. Olson - Lakewood CO

Assignee:

The United States of America as represented by the United States
Department of Energy - Washington DC

International Classification:

H01L 3118

US Classification:

136249

Abstract:

A multijunction (cascade) tandem photovoltaic solar cell device is fabricated of a Ga. sub. x In. sub. 1-x P (0. 505. ltoreq. X. ltoreq. 515) top cell semiconductor lattice matched to a GaAs bottom cell semiconductor at a low-resistance heterojunction, preferably a p+/n+ heterojunction between the cells. The top and bottom cells are both lattice matched and current matched for high efficiency solar radiation conversion to electrical energy.