Jeffrey A Mittereder

US Patent:

20070131970, Jun 14, 2007

Filed:

Dec 9, 2005

Appl. No.:

11/311592

Inventors:

Jeffrey Mittereder - Annandale VA, US
Andrew Edwards - Cary NC, US
Steven Binari - Annandale VA, US

International Classification:

H01L 29/739
H01L 31/00

US Classification:

257194000

Abstract:

This invention pertains to an electronic device and to a method for making it. The device is a heterojunction transistor, particularly a high electron mobility transistor, characterized by presence of a 2 DEG channel. Transistors of this invention contain an AlGaN barrier and a GaN buffer, with the channel disposed, when present, at the interface of the barrier and the buffer. Surface treated with ammonia plasma resembles untreated surface. The method pertains to treatment of the device with ammonia plasma prior to passivation to extend reliability of the device beyond a period of time on the order of 300 hours of operation, the device typically being a 2 DEG AlGaN/GaN high electron mobility transistor with essentially no gate lag and with essentially no rf power output degradation.

US Patent:

20080105880, May 8, 2008

Filed:

Dec 21, 2007

Appl. No.:

11/962259

Inventors:

Andrew Edwards - Cary NC, US
Steven Binari - Annandale VA, US
Jeffrey Mittereder - Annandale VA, US

International Classification:

H01L 29/778

US Classification:

257076000, 257E29246

Abstract:

This invention pertains to an electronic device and to a method for making it. The device is a heterojunction transistor, particularly a high electron mobility transistor, characterized by presence of a 2 DEG channel. Transistors of this invention contain an AlGaN barrier and a GaN buffer, with the channel disposed, when present, at the interface of the barrier and the buffer. Surface treated with ammonia plasma resembles untreated surface. The method pertains to treatment of the device with ammonia plasma prior to passivation to extend reliability of the device beyond a period of time on the order of 300 hours of operation, the device typically being a 2 DEG AlGaN/GaN high electron mobility transistor with essentially no gate lag and with essentially no rf power output degradation.