An apparatus for monitoring the thickness of a conductive layer on a substrate includes a support to hold a substrate having a conductive layer, an eddy current monitoring system including a first plurality of core portions, and a motor to cause relative motion between the support and the eddy current monitoring system such that the substrate moves across the first plurality of core portions in a direction that defines a first axis. At least one core portion is positioned further from a second axis than at least two other core portions. The second axis is orthogonal to the first axis.
High Sensitivity Real Time Profile Control Eddy Current Monitoring System
Kun Xu - Sunol CA, US Hassan G. Iravani - San Jose CA, US Boguslaw A. Swedek - Cupertino CA, US Yuchun Wang - Santa Clara CA, US Wen-Chiang Tu - Mountain View CA, US
International Classification:
H01L 21/306 B24B 49/10
US Classification:
438692, 451 5, 257E2123
Abstract:
A method of chemical mechanical polishing a metal layer on a substrate includes polishing the metal layer on the substrate at first and second polishing stations, monitoring thickness of the metal layer during polishing at the first and second polishing station with first and second eddy current monitoring systems having different resonant frequencies, and controlling pressures applied by a carrier head to the substrate during polishing at the first and second polishing stations to improve uniformity based on thickness measurements from the first and second eddy current monitoring systems.
High Sensitivity Real Time Profile Control Eddy Current Monitoring System
Hassan G. Iravani - San Jose CA, US Kun Xu - Sunol CA, US Boguslaw A. Swedek - Cupertino CA, US Yuchun Wang - Santa Clara CA, US Wen-Chiang Tu - Mountain View CA, US
International Classification:
B24B 49/00
US Classification:
451 5
Abstract:
An apparatus for chemical mechanical polishing includes a platen having a surface to support a polishing pad, and an eddy current monitoring system to generate an eddy current signal. The eddy current monitoring system includes a core and a coil wound around a portion of the core. The core includes a back portion, a first prong extending from the back portion in a first direction normal to the surface of the platen and having a width in a second direction parallel to the surface of the platen, and second and third prongs extending from the back portion in parallel with the first protrusion, the second and third prongs positioned on opposite sides of and equidistant from the first prong. A spacing between each of the second and third prongs and the first prong is approximately equal to twice the width of the first prong.
Hassan G. Iravani - San Jose CA, US Kun Xu - Sunol CA, US Boguslaw A. Swedek - Cupertino CA, US Ingemar Carlsson - Milpitas CA, US Wen-Chiang Tu - Mountain View CA, US
International Classification:
H01L 21/66 B24B 51/00
US Classification:
438 10, 451 5, 257E21528
Abstract:
A method of chemical mechanical polishing a substrate includes polishing a metal layer on the substrate at a polishing station, monitoring thickness of the metal layer during polishing at the polishing station with an eddy current monitoring system, and controlling pressures applied by a carrier head to the substrate during polishing of the metal layer at the polishing station based on thickness measurements of the metal layer from the eddy current monitoring system to reduce differences between an expected thickness profile of the metal layer and a target profile, wherein the metal layer has a resistivity greater than 700 ohm Angstroms.
Hassan G. Iravani - San Jose CA, US Kun Xu - Sunol CA, US Boguslaw A. Swedek - Cupertino CA, US Ingemar Carlsson - Milpitas CA, US Wen-Chiang Tu - Mountain View CA, US David Maxwell Gage - Sunnyvale CA, US
International Classification:
H01L 21/66
US Classification:
438 10, 257E21528
Abstract:
A method of chemical mechanical polishing a substrate includes polishing a plurality of discrete separated metal features of a layer on the substrate at a polishing station, using an eddy current monitoring system to monitor thickness of the metal features in the layer, and controlling pressures applied by a carrier head to the substrate during polishing of the layer at the polishing station based on thickness measurements of the metal features from the eddy current monitoring system to reduce differences between an expected thickness profile of the metal feature and a target profile.
Eddy Current Monitoring Of Metal Residue Or Metal Pillars
Hassan G. Iravani - San Jose CA, US Kun Xu - Sunol CA, US Boguslaw A. Swedek - Cupertino CA, US Ingemar Carlsson - Milpitas CA, US Wen-Chiang Tu - Mountain View CA, US David Maxwell Gage - Sunnyvale CA, US James C. Wang - Saratoga CA, US
International Classification:
B24B 1/00
US Classification:
451 8
Abstract:
A method of chemical mechanical polishing a substrate includes polishing a metal layer on the substrate at a polishing station, monitoring thickness of the metal layer during polishing at the polishing station with an eddy current monitoring system, and halting polishing when the eddy current monitoring system indicates that residue of the metal layer is removed from an underlying layer and a top surface of the underlying layer is exposed.
Can Coating And Curing System Having Focused Induction Heater Using Thin Lamination Cores
David L. Sluka - Milpitas CA Hassan Iravani - San Jose CA Robert A. Sprenger - late of Felton CA
Assignee:
Nordson Corporation - Westlake OH
International Classification:
H05B 610
US Classification:
219635
Abstract:
The side seam of a can is coated and heated inductively by passing it through a medium frequency, oscillating magnetic field generated by an induction coil wound around a core. The core is shaped and oriented so as to have two magnetically opposite poles direct magnetic flux in a concentrated manner from the coil into the side seams of cans traveling along a path of travel. The cores are constructed using individual laminations of high frequency core material, each less than about 0. 006 inches thick, individually insulated from each other and bound together to form a U- or E-shaped core directing flux toward the workpiece. The induction coil is constructed using a form of Litz wire and the coil and core are air-cooled. In one embodiment, the core has a plurality of pole pieces each directed toward the path of travel. The induction coil is wound on the core such that sequential ones of the pole pieces along the path of travel have alternatingly magnetically opposite polarities.
Compensation For Substrate Doping In Edge Reconstruction For In-Situ Electromagnetic Inductive Monitoring
- Santa Clara CA, US David Maxwell Gage - Sunnyvale CA, US Harry Q. Lee - Los Altos CA, US Denis Anatolyevich Ivanov - St. Petersburg, RU Hassan G. Iravani - Sunnyvale CA, US Doyle E. Bennett - Santa Clara CA, US Kiran Lall Shrestha - San Jose CA, US
International Classification:
B24B 37/013 H01L 21/66
Abstract:
A method of compensating for a contribution of conductivity of the semiconductor wafer to a measured trace by an in-situ electromagnetic induction monitoring system includes storing or generating a modified reference trace. The modified reference trace represents measurements of a bare doped reference semiconductor wafer by an in-situ electromagnetic induction monitoring system as modified by a neutral network. The substrate is monitored with an in-situ electromagnetic induction monitoring system to generate a measured trace that depends on a thickness of the conductive layer, and at least a portion of the measured trace is applied to a neural network to generate a modified measured trace. An adjusted trace is generated, including subtracting the modified reference trace from the modified measured trace.
5225 west Wiley Post Way, Salt Lake City, UT 84116
Industry:
Semiconductors
Work:
Applied Materials
Member of Technical Staff
Moutaingate Engineering 1994 - 2000
Senior Electrical Engineer
Education:
University of Portland 1975 - 1977
Skills:
Semiconductors Semiconductor Industry Silicon Design of Experiments Metrology Process Integration Product Engineering Thin Films Ic Eddy Current Sensors Power Electronics Semiconductor Process Pecvd Pvd Failure Analysis