Guy C Wicker

US Patent:

6339544, Jan 15, 2002

Filed:

Sep 29, 2000

Appl. No.:

09/676317

Inventors:

Chien Chiang - Fremont CA
Guy C. Wicker - Santa Clara CA

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

G11C 1142

US Classification:

365163

Abstract:

An apparatus including a contact on a substrate, a dielectric material overlying the contact, a phase change element overlying the dielectric material on a substrate, and a heater element disposed in the dielectric material and coupled to the contact and the phase change element, wherein a portion of the dielectric material comprises a thermal conductivity less than silicon dioxide. A method including introducing over a contact formed on a substrate, a dielectric material, a portion of which comprises a thermal conductivity less than silicon dioxide, introducing a heater element through the dielectric material to the contact, and introducing a phase change material over the dielectric material and the heater element.

US Patent:

6429064, Aug 6, 2002

Filed:

Sep 29, 2000

Appl. No.:

09/676314

Inventors:

Guy C. Wicker - Santa Clara CA

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

H01L 218234

US Classification:

438238, 438 95, 438102, 438133, 438675, 257 4

Abstract:

A method including, in a dielectric material over a contact on a substrate, forming a trench to the contact; introducing an electrode material along the sidewalls of the trench; introducing a phase change material over material along a first sidewall; and modifying the electrode material along the sidewalls such that only the material along the first sidewall acts as a conductive path between the contact and the phase change material. An apparatus including a chalcogenide memory element; a contact; and a heater element comprising two leg portions, a first leg portion coupled to the contact and the chalcogenide memory element, and only the first leg portion acts as a conductive path between the contact and the chalcogenide memory element.

US Patent:

6567296, May 20, 2003

Filed:

Oct 24, 2001

Appl. No.:

10/041684

Inventors:

Giulio Casagrande - Vignate, IT
Tyler Lowrey - San Jose CA
Roberto Bez - Milan, IT
Guy Wicker - Southfield MI
Edward Spall - Manassas VA
Stephen Hudgens - Santa Clara CA
Wolodymyr Czubatyj - Warren MI

Assignee:

STMicroelectronics S.r.l. - Agrate Brianza
Ovonyx, Inc. - Troy MI

International Classification:

G11C 1706

US Classification:

365105, 365175

Abstract:

A memory device including a plurality of memory cells, a plurality of insulated first regions of a first type of conductivity formed in a chip of semiconductor material, at least one second region of a second type of conductivity formed in each first region, a junction between each second region and the corresponding first region defining a unidirectional conduction access element for selecting a corresponding memory cell connected to the second region when forward biased, and at least one contact for contacting each first region; a plurality of access elements are formed in each first region, the access elements being grouped into at least one sub-set consisting of a plurality of adjacent access elements without interposition of any contact, and the memory device further includes means for forward biasing the access elements of each sub-set simultaneously.

US Patent:

6597009, Jul 22, 2003

Filed:

Jan 4, 2002

Appl. No.:

10/039832

Inventors:

Guy C. Wicker - Santa Clara CA

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

H01L 4700

US Classification:

257 4, 257 3, 257 5, 365100, 365148

Abstract:

A method including, in a dielectric material over a contact on a substrate, forming a trench to the contact; introducing an electrode material along the sidewalls of the trench; introducing a phase change material over material along a first sidewall; and modifying the electrode material along the sidewalls such that only the material along the first sidewall acts as a conductive path between the contact and the phase change material. An apparatus including a chalcogenide memory element; a contact; and a heater element comprising two leg portions, a first leg portion coupled to the contact and the chalcogenide memory element, and only the first leg portion acts as a conductive path between the contact and the chalcogenide memory element.

US Patent:

6608773, Aug 19, 2003

Filed:

Oct 10, 2001

Appl. No.:

09/974590

Inventors:

Tyler Lowrey - San Jose CA
Guy C. Wicker - Santa Clara CA

Assignee:

Ovonyx, Inc. - Boise ID

International Classification:

G11C 1700

US Classification:

365100, 36518909

Abstract:

A memory system, comprising: a memory cell comprising a programmable resistance element programmable to at least a first resistance state and a second resistance state. The memory cell interconnecting a row line and a column line. A power line, distinct from the row line and the column line, coupling said memory cell to a power source.

US Patent:

6621095, Sep 16, 2003

Filed:

Aug 29, 2001

Appl. No.:

09/944349

Inventors:

Chien Chiang - Fremont CA
Guy C. Wicker - Santa Clara CA

Assignee:

Ovonyx, Inc. - Boise ID

International Classification:

H01L 2906

US Classification:

257 5, 257 2, 257 3, 257 4, 257 41, 257 50, 257300, 257529, 257530

Abstract:

An apparatus including a contact on a substrate, a dielectric material overlying the contact, a phase change element overlying the dielectric material on a substrate, and a heater element disposed in the dielectric material and coupled to the contact and the phase change element, wherein a portion of the dielectric material comprises a thermal conductivity less than silicon dioxide. A method including introducing over a contact formed on a substrate, a dielectric material, a portion of which comprises a thermal conductivity less than silicon dioxide, introducing a heater element through the dielectric material to the contact, and introducing a phase change material over the dielectric material and the heater element.

US Patent:

6673700, Jan 6, 2004

Filed:

Jun 30, 2001

Appl. No.:

09/895020

Inventors:

Charles H. Dennison - San Jose CA
Guy C. Wicker - Santa Clara CA
Tyler A. Lowrey - San Jose CA
Stephen J. Hudgens - Santa Clara CA
Chien Chiang - Fremont CA
Daniel Xu - Mountain View CA

Assignee:

Ovonyx, Inc. - Boise ID

International Classification:

H01L 21326

US Classification:

438466, 438573

Abstract:

A method comprising forming a sacrificial layer over less than the entire portion of a contact area on a substrate, the sacrificial layer having a thickness defining an edge over the contact area, forming a spacer layer over the spacer, the spacer layer conforming to the shape of the first sacrificial layer such that the spacer layer comprises an edge portion over the contact area adjacent the first sacrificial layer edge, removing the sacrificial layer, while retaining the edge portion of the spacer layer over the contact area, forming a dielectric layer over the contact area, removing the edge portion, and forming a programmable material to the contact area formerly occupied by the edge portion. An apparatus comprising a volume of programmable material, a conductor, and an electrode disposed between the volume of programmable material and the conductor, the electrode having a contact area at one end coupled to the volume of programmable material, wherein the contact area is less than the surface area at the one end.

US Patent:

6770524, Aug 3, 2004

Filed:

Jul 1, 2003

Appl. No.:

10/611600

Inventors:

Chien Chiang - Fremont CA
Guy C. Wicker - Santa Clara CA

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

H01L 218234

US Classification:

438238, 257 2, 257 3, 257 4, 257 5, 257 41, 257 50, 257300, 365108, 365119, 365120, 365163

Abstract:

An apparatus including a contact on a substrate, a dielectric material overlying the contact, a phase change element overlying the dielectric material on a substrate, and a heater element disposed in the dielectric material and coupled to the contact and the phase change element, wherein a portion of the dielectric material comprises a thermal conductivity less than silicon dioxide. A method including introducing over a contact formed on a substrate, a dielectric material, a portion of which comprises a thermal conductivity less than silicon dioxide, introducing a heater element through the dielectric material to the contact, and introducing a phase change material over the dielectric material and the heater element.