Ovshinsky Innovation
Chief Executive Officer
Capital and Assay Nov 2010 - Sep 2012
Electrochemist
Ovonyx Feb 2000 - Sep 2010
Director Modelling and Simulation
Energy Conversion Devices Jun 1985 - Jan 2000
Group Leader Special Projects
Education:
Wayne State University 1992 - 1996
Michigan Technological University
Masters, Master of Science In Electrical Engineering, Electrical Engineering
Skills:
Simulations Physics Pvd Electrochemistry Optics Solar Cells Photolithography Materials Science Semiconductors Thin Films Design of Experiments Instrumentation Xrf Vacuum Characterization R&D C Electronics Metallurgy Sputtering Photovoltaics Silicon Computer Architecture Nanotechnology Failure Analysis Afm Nanomaterials Ftir Powder X Ray Diffraction Scanning Electron Microscopy Etching Sensors Eeprom Cvd Tem Metrology Plasma Physics Radiation Physics Radiation
Chien Chiang - Fremont CA Guy C. Wicker - Santa Clara CA
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
G11C 1142
US Classification:
365163
Abstract:
An apparatus including a contact on a substrate, a dielectric material overlying the contact, a phase change element overlying the dielectric material on a substrate, and a heater element disposed in the dielectric material and coupled to the contact and the phase change element, wherein a portion of the dielectric material comprises a thermal conductivity less than silicon dioxide. A method including introducing over a contact formed on a substrate, a dielectric material, a portion of which comprises a thermal conductivity less than silicon dioxide, introducing a heater element through the dielectric material to the contact, and introducing a phase change material over the dielectric material and the heater element.
A method including, in a dielectric material over a contact on a substrate, forming a trench to the contact; introducing an electrode material along the sidewalls of the trench; introducing a phase change material over material along a first sidewall; and modifying the electrode material along the sidewalls such that only the material along the first sidewall acts as a conductive path between the contact and the phase change material. An apparatus including a chalcogenide memory element; a contact; and a heater element comprising two leg portions, a first leg portion coupled to the contact and the chalcogenide memory element, and only the first leg portion acts as a conductive path between the contact and the chalcogenide memory element.
Giulio Casagrande - Vignate, IT Tyler Lowrey - San Jose CA Roberto Bez - Milan, IT Guy Wicker - Southfield MI Edward Spall - Manassas VA Stephen Hudgens - Santa Clara CA Wolodymyr Czubatyj - Warren MI
Assignee:
STMicroelectronics S.r.l. - Agrate Brianza Ovonyx, Inc. - Troy MI
International Classification:
G11C 1706
US Classification:
365105, 365175
Abstract:
A memory device including a plurality of memory cells, a plurality of insulated first regions of a first type of conductivity formed in a chip of semiconductor material, at least one second region of a second type of conductivity formed in each first region, a junction between each second region and the corresponding first region defining a unidirectional conduction access element for selecting a corresponding memory cell connected to the second region when forward biased, and at least one contact for contacting each first region; a plurality of access elements are formed in each first region, the access elements being grouped into at least one sub-set consisting of a plurality of adjacent access elements without interposition of any contact, and the memory device further includes means for forward biasing the access elements of each sub-set simultaneously.
A method including, in a dielectric material over a contact on a substrate, forming a trench to the contact; introducing an electrode material along the sidewalls of the trench; introducing a phase change material over material along a first sidewall; and modifying the electrode material along the sidewalls such that only the material along the first sidewall acts as a conductive path between the contact and the phase change material. An apparatus including a chalcogenide memory element; a contact; and a heater element comprising two leg portions, a first leg portion coupled to the contact and the chalcogenide memory element, and only the first leg portion acts as a conductive path between the contact and the chalcogenide memory element.
Tyler Lowrey - San Jose CA Guy C. Wicker - Santa Clara CA
Assignee:
Ovonyx, Inc. - Boise ID
International Classification:
G11C 1700
US Classification:
365100, 36518909
Abstract:
A memory system, comprising: a memory cell comprising a programmable resistance element programmable to at least a first resistance state and a second resistance state. The memory cell interconnecting a row line and a column line. A power line, distinct from the row line and the column line, coupling said memory cell to a power source.
Method To Enhance Performance Of Thermal Resistor Device
An apparatus including a contact on a substrate, a dielectric material overlying the contact, a phase change element overlying the dielectric material on a substrate, and a heater element disposed in the dielectric material and coupled to the contact and the phase change element, wherein a portion of the dielectric material comprises a thermal conductivity less than silicon dioxide. A method including introducing over a contact formed on a substrate, a dielectric material, a portion of which comprises a thermal conductivity less than silicon dioxide, introducing a heater element through the dielectric material to the contact, and introducing a phase change material over the dielectric material and the heater element.
Reduced Area Intersection Between Electrode And Programming Element
Charles H. Dennison - San Jose CA Guy C. Wicker - Santa Clara CA Tyler A. Lowrey - San Jose CA Stephen J. Hudgens - Santa Clara CA Chien Chiang - Fremont CA Daniel Xu - Mountain View CA
Assignee:
Ovonyx, Inc. - Boise ID
International Classification:
H01L 21326
US Classification:
438466, 438573
Abstract:
A method comprising forming a sacrificial layer over less than the entire portion of a contact area on a substrate, the sacrificial layer having a thickness defining an edge over the contact area, forming a spacer layer over the spacer, the spacer layer conforming to the shape of the first sacrificial layer such that the spacer layer comprises an edge portion over the contact area adjacent the first sacrificial layer edge, removing the sacrificial layer, while retaining the edge portion of the spacer layer over the contact area, forming a dielectric layer over the contact area, removing the edge portion, and forming a programmable material to the contact area formerly occupied by the edge portion. An apparatus comprising a volume of programmable material, a conductor, and an electrode disposed between the volume of programmable material and the conductor, the electrode having a contact area at one end coupled to the volume of programmable material, wherein the contact area is less than the surface area at the one end.
Method To Enhance Performance Of Thermal Resistor Device
An apparatus including a contact on a substrate, a dielectric material overlying the contact, a phase change element overlying the dielectric material on a substrate, and a heater element disposed in the dielectric material and coupled to the contact and the phase change element, wherein a portion of the dielectric material comprises a thermal conductivity less than silicon dioxide. A method including introducing over a contact formed on a substrate, a dielectric material, a portion of which comprises a thermal conductivity less than silicon dioxide, introducing a heater element through the dielectric material to the contact, and introducing a phase change material over the dielectric material and the heater element.
Name / Title
Company / Classification
Phones & Addresses
Guy Wicker Principal
Nethercraft Whol Toys/Hobby Goods
27000 Pebblestone St, Southfield, MI 48034
Youtube
Bike Flip Guy [HD Slow-Mo]
Bike Flip Guy (BFG) flips over in a rubber-covered metal-frame monster...
Category:
Entertainment
Uploaded:
10 May, 2010
Duration:
24s
Drunk Guy at Wicker Park fest 2010
If you were there, he was the one at fun.'s set that was dancing conti...
Category:
People & Blogs
Uploaded:
02 Aug, 2010
Duration:
29s
The Wicker Man
A short but 110% accurate look at the 2006 film, "The Wicker Man". Spo...
Category:
Comedy
Uploaded:
17 Oct, 2010
Duration:
43s
The Wicker Man on the... Recorder? (Performan...
Some guy who commented on my channel (Creidof) said I should do some M...
Category:
Music
Uploaded:
19 Apr, 2011
Duration:
4m 21s
HOT GUY & GIRL DANCING GAY DUPONT CIRCLE CAPI...
DC's Capital Pride 2009 parade had ended. Young people kept the party ...
Category:
News & Politics
Uploaded:
15 Jun, 2009
Duration:
5m 35s
Youtube poop: The Wicker man: This is Murder!
The Wicker Man: possibly the best movie ever made.
Category:
Comedy
Uploaded:
20 May, 2010
Duration:
2m 16s
The Wicker Man - Comedy Trailer
The Wicker Man recut into a straight comedy...I mean, horror? Who were...