Glenn J Martyna

US Patent:

7848135, Dec 7, 2010

Filed:

Sep 19, 2008

Appl. No.:

12/234100

Inventors:

Bruce G. Elmegreen - Goldens Bridge NY, US
Lia Krusin-Elbaum - Dobbs Ferry NY, US
Xiao Hu Liu - Briarcliff Manor NY, US
Glenn J. Martyna - Pleasantville NY, US
Martin Muser - London, CA
Dennis M. Newns - Yorktown Heights NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G11C 11/00

US Classification:

365157, 365163, 36518919, 29 2535

Abstract:

A piezoelectrically programmed, non-volatile memory cell structure includes a programmable piezo-resistive hysteretic material (PRHM) that is capable of being interconverted between a low resistance state and high resistance state through applied pressure cycling thereto; a piezoelectric material mechanically coupled to the PRHM such that an applied voltage across the piezoelectric material results in one of a tensile or compressive stress applied to the PRHM, depending upon the polarity of the applied voltage; and one or more electrodes in electrical communication with the PRHM, wherein the one or more electrodes are configured to provide a write programming current path through the piezoelectric material and a read current path through the PRHM.

US Patent:

8159854, Apr 17, 2012

Filed:

Jun 30, 2009

Appl. No.:

12/495027

Inventors:

Bruce G. Elmegreen - Yorktown Heights NY, US
Lia Krusin-Elbaum - Yorktown Heights NY, US
Glenn J. Martyna - Yorktown Heights NY, US
Xiao Hu Liu - Yorktown Heights NY, US
Dennis M. Newns - Yorktown Heights NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G11C 5/06

US Classification:

365 72, 365177

Abstract:

A piezo-effect transistor (PET) device includes a piezoelectric (PE) material disposed between first and second electrodes; and a piezoresistive (PR) material disposed between the second electrode and a third electrode, wherein the first electrode comprises a gate terminal, the second electrode comprises a common terminal, and the third electrode comprises an output terminal such that an electrical resistance of the PR material is dependent upon an applied voltage across the PE material by way of an applied pressure to the PR material by the PE material.

US Patent:

8247947, Aug 21, 2012

Filed:

Dec 7, 2009

Appl. No.:

12/632154

Inventors:

Bruce G. Elmegreen - Yorktown Heights NY, US
Lia Krusin-Elbaum - Yorktown Heights NY, US
Glenn J. Martyna - Yorktown Heights NY, US
Xiao Hu Liu - Yorktown Heights NY, US
Dennis M. Newns - Yorktown Heights NY, US
Kuan-Neng Chen - Hsinchu, TW

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 41/00

US Classification:

310328, 310318, 310339, 310340, 427100

Abstract:

A coupling structure for coupling piezoelectric material generated stresses to an actuated device of an integrated circuit includes a rigid stiffener structure formed around a piezoelectric (PE) material and the actuated device, the actuated device comprising a piezoresistive (PR) material that has an electrical resistance dependent upon an applied pressure thereto; and a soft buffer structure formed around the PE material and PR material, the buffer structure disposed between the PE and PR materials and the stiffener structure, wherein the stiffener structure clamps both the PE and PR materials to a substrate over which the PE and PR materials are formed, and wherein the soft buffer structure permits the PE material freedom to move relative to the PR material, thereby coupling stress generated by an applied voltage to the PE material to the PR material so as change the electrical resistance of the PR material.

US Patent:

8405279, Mar 26, 2013

Filed:

Jun 26, 2012

Appl. No.:

13/532991

Inventors:

Bruce G. Elmegreen - Yorktown Heights NY, US
Lia Krusin-Elbaum - Yorktown Heights NY, US
Glenn J. Martyna - Yorktown Heights NY, US
Xiao Hu Liu - Yorktown Heights NY, US
Dennis M. Newns - Yorktown Heights NY, US
Kuan-Neng Chen - Hsinchu, TW

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/02

US Classification:

310328, 310318, 310339, 310340, 427100

Abstract:

A coupling structure for coupling piezoelectric material generated stresses to an actuated device of an integrated circuit includes a rigid stiffener structure formed around a piezoelectric (PE) material and the actuated device, the actuated device comprising a piezoresistive (PR) material that has an electrical resistance dependent upon an applied pressure thereto; and a soft buffer structure formed around the PE material and PR material, the buffer structure disposed between the PE and PR materials and the stiffener structure, wherein the stiffener structure clamps both the PE and PR materials to a substrate over which the PE and PR materials are formed, and wherein the soft buffer structure permits the PE material freedom to move relative to the PR material, thereby coupling stress generated by an applied voltage to the PE material to the PR material so as change the electrical resistance of the PR material.

US Patent:

8641879, Feb 4, 2014

Filed:

Sep 12, 2012

Appl. No.:

13/611662

Inventors:

Stefan Harrer - New York NY, US
Binquan Luan - Ossining NY, US
Glenn J. Martyna - Croton on Hudson NY, US
Hongbo Peng - Chappaque NY, US
Stanislav Polonsky - Putnam Valley NY, US
Stephen M. Rossnagel - Pleasantville NY, US
Ajay K. Royyuru - Congers NY, US
Gustavo A. Stolovitzky - Riverdale NY, US
George F. Walker - New York NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G01N 27/26

US Classification:

204451

Abstract:

A technique for controlling the motion of one or more charged entities linked to a polymer through a nanochannel is provided. A first reservoir and a second reservoir are connected by the nanochannel. An array of electrodes is positioned along the nanochannel, where fluid fills the first reservoir, the second reservoir, and the nanochannel. A first electrode is in the first reservoir and a second electrode is in the second reservoir. The first and second electrodes are configured to direct the one or more charged entities linked to the polymer into the nanochannel. An array of electrodes is configured to trap the one or more charged entities in the nanochannel responsive to being controlled for trapping. The array of electrodes is configured to move the one or more charged entities along the nanochannel responsive to being controlled for moving.

US Patent:

20050045872, Mar 3, 2005

Filed:

Aug 27, 2003

Appl. No.:

10/648346

Inventors:

Dennis Newns - Yorktown Heights NY, US
David DiVincenzo - Tarrytown NY, US
Roger Koch - Amawalk NY, US
Glenn Martyna - Pleasantville NY, US
Jim Rozen - Peekskill NY, US
Chang Tsuei - Chappaqua NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L029/06

US Classification:

257031000

Abstract:

A qubit (quantum bit) circuit includes a superconducting main loop that is electrically-completed by a serially-interconnected superconducting subloop. The subloop includes two Josephson junctions. A first coil provides a first flux that couples with the main loop but not with the subloop. A second coil provides a second flux that couples with the subloop but not with the main loop.

US Patent:

20120000516, Jan 5, 2012

Filed:

Jul 1, 2010

Appl. No.:

12/828446

Inventors:

Ageeth A. Bol - Yorktown Heights NY, US
Amal Kasry - White Plains NY, US
Ahmed Maarouf - Mohegan Lake NY, US
Glenn J. Martyna - Croton on Hudson NY, US
Dennis M. Newns - Yorktown Heights NY, US
Razvan A. Nistor - New York NY, US
George S. Tulevski - Yorktown Heights NY, US

Assignee:

EGYPT NANOTECHNOLOGY CENTER - Cairo
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

International Classification:

H01L 31/0288
H01L 31/18
H01L 31/0256

US Classification:

136255, 136261, 438 98, 257E3111, 257E31002

Abstract:

A solar cell includes a semiconductor portion, a graphene layer disposed on a first surface of the semiconductor portion, and a first conductive layer patterned on the graphene layer, the first conductive layer including at least one bus bar portion and a plurality of fingers extending from the at least one bus bar portion.

US Patent:

20120000521, Jan 5, 2012

Filed:

Jul 1, 2010

Appl. No.:

12/828449

Inventors:

Ageeth A. Bol - Yorktown Heights NY, US
Amal Kasry - White Plains NY, US
Marcelo Kuroda - Woodbury CT, US
Ahmed Maarouf - Mohegan Lake NY, US
Glenn J. Martyna - Croton on Hudson NY, US
Dennis M. Newns - Yorktown Heights NY, US
Razvan A. Nistor - New York NY, US
George S. Tulevski - White Plains NY, US

Assignee:

EGYPT NANOTECHNOLOGY CENTER - Cairo
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

International Classification:

H01L 31/0232

US Classification:

136256, 136252, 438 69, 257E31127

Abstract:

A solar cell includes a semiconductor portion, a graphene layer disposed on a first surface of the semiconductor portion, and a first conductive layer patterned on the graphene layer, the first conductive layer including at least one bus bar portion, a plurality of fingers extending from the at least one bus bar portion, and a refractive layer disposed on the first conductive layer.