Ewa Beata Oldak

US Patent:

6723691, Apr 20, 2004

Filed:

Feb 12, 2001

Appl. No.:

09/781859

Inventors:

Shahriar Naghshineh - Allentown PA
Jeff Barnes - Bath PA
Ewa B. Oldak - Bethlehem PA

Assignee:

Advanced Technology Materials, Inc. - Danbury CT

International Classification:

C11D 162

US Classification:

510175, 510176, 510245, 510254, 510499, 510488, 510477, 510504

Abstract:

A cleaning solution for cleaning microelectronic substrates, particularly for post-CMP or via formation cleaning. The cleaning solution comprises a quaternary ammonium hydroxide, an organic amine, a corrosion inhibitor, optionally an organic acid, and water. A preferred cleaning solution comprises tetramethylammonium hydroxide, monoethylanolamine, gallic acid ascorbic acid, and water with the alkalinity of the cleaning solution greater than 0. 073 milliequivalents base per gram of solution.

US Patent:

7922823, Apr 12, 2011

Filed:

Jan 26, 2006

Appl. No.:

11/814714

Inventors:

Elizabeth Walker - Stockertown PA, US
Shahri Naghshineh - Allentown PA, US
Jeffrey A. Barnes - Bath PA, US
Ewa Oldak - Bethlehem PA, US
Darryl W. Peters - Stewartsville NJ, US
Kevin P. Yanders - Germansville PA, US

Assignee:

Advanced Technology Materials, Inc. - Danbury CT

International Classification:

C11D 7/32

US Classification:

134 13, 510175

Abstract:

Compositions useful in microelectronic device manufacturing for surface preparation and/or cleaning of wafer substrates such as microelectronic device precursor structures. The compositions can be employed for processing of wafers that have, or are intended to be further processed to include, copper metallization, e. g. , in operations such as surface preparation, pre-plating cleaning, post-etching cleaning, and post-chemical mechanical polishing cleaning of microelectronic device wafers. The compositions contain (i) alkanolamine, (ii) quaternary ammonium hydroxide and (iii) a complexing agent, and are storage-stable, as well as non-darkening and degradation-resistant in exposure to oxygen.

US Patent:

7923423, Apr 12, 2011

Filed:

Jan 27, 2005

Appl. No.:

11/046262

Inventors:

Elizabeth Walker - Nazareth PA, US
Shahri Naghshineh - Allentown PA, US
Jeff Barnes - Bath PA, US
Ewa Oldak - Bethlehem PA, US

Assignee:

Advanced Technology Materials, Inc. - Danbury CT

International Classification:

C11D 7/50

US Classification:

510175, 510176, 134 13

Abstract:

Compositions useful in semiconductor manufacturing for surface preparation and/or cleaning of wafer substrates such as semiconductor device precursor structures. The compositions can be employed for processing of wafers that have, or are intended to be further processed to include, copper metallization, e. g. , in operations such as surface preparation, pre-plating cleaning, post-etching cleaning, and post-chemical mechanical polishing cleaning of semiconductor wafers. The compositions contain (i) alkanolamine, (ii) quaternary ammonium hydroxide and (iii) a complexing agent, and are storage-stable, as well as non-darkening and degradation-resistant in exposure to oxygen.

US Patent:

20060148666, Jul 6, 2006

Filed:

Dec 30, 2004

Appl. No.:

11/027845

Inventors:

Darryl Peters - Stewartsville NJ, US
Ewa Oldak - Bethlehem PA, US
Elizabeth Walker - Nazareth PA, US
Jeffrey Barnes - Nazareth PA, US
Shahriar Naghshineh - Allentown PA, US

International Classification:

C11D 7/32

US Classification:

510175000

Abstract:

A cleaning solution is provided for cleaning copper-containing microelectronic substrates, particularly for post etch, post-CMP or Via formation cleaning. The cleaning solution comprises a quaternary ammonium hydroxide, an organic amine, a corrosion inhibitor, and water. A preferred cleaning solution comprises tetramethylammonium hydroxide, monoethanolamine, gallic acid, and water. The pH of cleaning solution is greater than 10.

US Patent:

20080076688, Mar 27, 2008

Filed:

Sep 21, 2006

Appl. No.:

11/524619

Inventors:

Jeffrey A. Barnes - Bath PA, US
Elizabeth Walker - Nazareth PA, US
Darryl W. Peters - Stewartsville NJ, US
Kyle Bartosh - Northampton PA, US
Ewa R. Oldak - Fountain Hill PA, US
Kevin P. Yanders - Germansville PA, US

International Classification:

B08B 7/00
C11D 7/32

US Classification:

510175, 134 42

Abstract:

Alkaline aqueous cleaning compositions and processes for cleaning post-chemical mechanical polishing (CMP) residue, post-etch residue and/or contaminants from a microelectronic device having said residue and contaminants thereon. The alkaline aqueous cleaning compositions include amine, passivating agent, and water. The composition achieves highly efficacious cleaning of the residue and contaminant material from the microelectronic device while simultaneously passivating the metal interconnect material.

US Patent:

20090120457, May 14, 2009

Filed:

Nov 7, 2008

Appl. No.:

12/266954

Inventors:

Shahriar Naghshineh - Allentown PA, US
Kevin Yanders - Germansville PA, US
Ewa Oldak - Fountain Hill PA, US
George Schwartzkopf - Washington NJ, US

Assignee:

SURFACE CHEMISTRY DISCOVERIES, INC. - Bethlehem PA

International Classification:

C23G 1/14
G03F 7/42

US Classification:

134 2, 510176

Abstract:

Improved cleaning compositions for removing particles, organic contamination, photoresist, post-ash residue, coatings, and other materials from metal and silicon surfaces including substrates present during the manufacture of integrated circuits, liquid crystal displays, and photovoltaic devices. The cleaning and surface preparation compositions comprise one or more water soluble strongly basic components, one or more water soluble organic amines, one or more water soluble oxidizing agents, balance water. Optional components can include corrosion inhibitors, surfactants and chelating agents.

US Patent:

20100018550, Jan 28, 2010

Filed:

Jul 20, 2009

Appl. No.:

12/505690

Inventors:

George Schwartzkopf - Washington NJ, US
Ewa Oldak - Fountain Hill PA, US
Shahriar Naghshineh - Allentown PA, US

Assignee:

Surface Chemistry Discoveries, Inc. - Bethlehem PA

International Classification:

C23G 1/00
C11D 3/60

US Classification:

134 2, 510175

Abstract:

Aqueous cleaning compositions comprising a tertiary organic amine, an organic acid, a non-metallic fluoride salt, a corrosion inhibitor, e.g., ascorbic acid or its derivatives alone or in combination, balance water, effective to remove plasma processing residues (sidewall polymer) which include metal-organic complexes and/or inorganic salts, oxides, hydroxides or complexes which form films or residues either alone or in combination with the organic polymer resins. These compositions clean effectively at low temperatures without etching metal or dielectric layers, including low-κ dielectric materials.

US Patent:

20120187336, Jul 26, 2012

Filed:

Jan 20, 2012

Appl. No.:

13/354423

Inventors:

Shahriar Naghshineh - Allentown PA, US
Ewa Oldak - Fountain Hill PA, US
George Schwartzkopf - Washington NJ, US

Assignee:

SURFACE CHEMISTRY DISCOVERIES, INC. - Bethlehem PA

International Classification:

C09K 13/02
H01L 31/18
B08B 3/08
B08B 3/12
C11D 7/60
C09K 13/00

US Classification:

252 795, 510175, 252 791, 134 2, 134 1, 438 71, 257E3113

Abstract:

Method of using improved compositions for conditioning silicon surfaces during the manufacture of photovoltaic devices. Used for removing particles, organic contamination, and unwanted metals from these surfaces. Also used for removing a thin layer of silicon as required for damage removal or texturing. These conditioning and surface preparation compositions comprise one or more water soluble strongly basic components capable of producing a pH greater than 10, one or more water soluble organic amines, one or more chelating agents, and water.