Eller Y. Juco - San Jose CA, US Visweswaren Sivaramakrishnan - Santa Clara CA, US Mario David Silvetti - Morgan Hill CA, US Talex Sajoto - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23F 1/02 C23C 14/00 C23C 16/00
US Classification:
15634544, 15634548, 20429808, 20429807, 118723 VE, 118723 R
Abstract:
A substrate processing system is provided with a processing chamber, an alternating voltage supply, and an impedance matching network. The processing chamber holds a substrate during processing and the alternating voltage supply is connected with the processing chamber to capacitively couple energy to a plasma formed within the processing chamber. The impedance matching network is coupled with the alternating voltage supply and has a variable resistive element and a variable reactive element, whose states respectively define distinct real and imaginary parts of an impedance.
Soovo Sen - Sunnyvale CA, US Inna Shmurun - Foster City CA, US Thomas Nowak - Cupertino CA, US Nancy Fung - Sunnyvale CA, US Brian Hopper - Campbell CA, US Andrzej Kaszuba - San Jose CA, US Eller Juco - San Jose CA, US
A method and apparatus for a chamber for chemical vapor deposition on a substrate in a processing region comprising a gas box having a heated lid comprising a gas inlet passage, and a face plate connected to the heated lid positioned to conduct gas from the heated gas box to a substrate processing region. Also, a method for providing heat to a chemical vapor deposition chamber comprising supplying heat to a lid of a gas box, and heating a face plate connected to the gas box by heat transfer from the lid.
KeeBum Jung - Gilroy CA, US Sum-Yee Tang - San Jose CA, US Martin Seamons - San Jose CA, US Reza Arghavani - Scotts Valley CA, US Eller Juco - San Jose CA, US
International Classification:
H05H001/24 C23C016/00
US Classification:
427569000, 11872300E
Abstract:
We have discovered that is possible to tune the stress of a single-layer silicon nitride film by manipulating certain film deposition parameters. These parameters include: use of multiple (typically dual) power input sources operating within different frequency ranges; the deposition temperature; the process chamber pressure; and the composition of the deposition source gas. In particular, we have found that it is possible to produce a single-layer, thin (300 Å to 1000 Å thickness) silicon nitride film having a stress tuned to be within the range of about −1.4 GPa (compressive) to about +1.5 GPa (tensile) by depositing the film by PECVD, in a single deposition step, at a substrate temperature within the range of about 375 C. to about 525 C., and over a process chamber pressure ranging from about 2 Torr to about 15 Torr.
Apparatus And Method For Substrate Clamping In A Plasma Chamber
Ganesh Balasubramanian - Sunnyvale CA, US Amit Bansal - Santa Clara CA, US Eller Juco - San Jose CA, US Mohamad Ayoub - San Jose CA, US Hyung-Joon Kim - Sunnyvale CA, US Karthik Janakiraman - San Jose CA, US Sudha Rathi - San Jose CA, US Deenesh Padhi - Sunnyvale CA, US Martin Seamons - San Jose CA, US Visweswaren Sivaramakrishnan - Cupertino CA, US Bok Kim - San Jose CA, US Amir Al-Bayati - San Jose CA, US Derek Witty - Fremont CA, US Hichem M'Saad - Santa Clara CA, US Anton Baryshnikov - San Jose CA, US Chiu Chan - Foster City CA, US Shuang Liu - Saratoga CA, US
International Classification:
H01L 21/683
US Classification:
361234000
Abstract:
The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.
Karthik Janakiraman - San Jose CA, US Thomas Nowak - Cupertino CA, US Juan Carlos Rocha-Alvarez - San Carlos CA, US Mark A. Fodor - Los Gatos CA, US Dale R. Du Bois - Los Gatos CA, US Amit Bansal - Santa Clara CA, US Mohamad Ayoub - San Jose CA, US Eller Y. Juco - San Jose CA, US Visweswaren Sivaramakrishnan - Cupertino CA, US Hichem M'Saad - Santa Clara CA, US
International Classification:
C23C 16/00 H05H 1/24
US Classification:
204164, 118723 R
Abstract:
An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.
Arrangements For Manipulating Plasma Confinement Within A Plasma Processing System And Methods Thereof
Eller Y. Juco - San Jose CA, US Yunsang Kim - Fremont CA, US Andrew Bailey - Pleasanton CA, US
International Classification:
C23F 1/00
US Classification:
216 71, 15634528
Abstract:
An arrangement for controlling bevel etch rate during plasma processing within a processing chamber. The arrangement includes a power source and a gas distribution system. The arrangement also includes a lower electrode, which is configured at least for supporting a substrate. The arrangement further includes a top ring electrode positioned above the substrate and a bottom ring electrode positioned below the substrate. The arrangement yet also includes a first match arrangement coupled to the top ring electrode and configured at least for controlling current flowing through the top ring electrode to control amount of plasma available for etching at least a part of the substrate top edge. The arrangement yet further includes a second match arrangement configured to control the current flowing through the bottom ring electrode to control amount of plasma available for at least etching at least a part of the substrate bottom edge.
Apparatus And Method For Substrate Clamping In A Plasma Chamber
Ganesh Balasubramanian - Sunnyvale CA, US Amit Bansal - Santa Clara CA, US Eller Y. Juco - San Jose CA, US Mohamad Ayoub - San Jose CA, US Hyung-Joon Kim - Sunnyvale CA, US Karthik Janakiraman - San Jose CA, US Sudha Rathi - San Jose CA, US Deenesh Padhi - Sunnyvale CA, US Martin Jay Seamons - San Jose CA, US Visweswaren Sivaramakrishnan - Cupertino CA, US Bok Hoen Kim - San Jose CA, US Amir Al-Bayati - San Jose CA, US Derek R. Witty - Fremont CA, US Hichem M'Saad - Santa Clara CA, US Anton Baryshnikov - San Jose CA, US Chiu Chan - Foster City CA, US Shuang Liu - Saratoga CA, US
International Classification:
H01L 21/683 H01L 21/66 G01R 27/02
US Classification:
361234, 438 17, 702 65
Abstract:
The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.
Karthik Janakiraman - San Jose CA, US Thomas Nowak - Cupertino CA, US Juan Carlos Rocha-Alvarez - San Carlos CA, US Mark A. Fodor - Los Gatos CA, US Dale R. Du Bois - Los Gatos CA, US Amit Bansal - Sunnyvale CA, US Mohamad A. Ayoub - Los Gatos CA, US Eller Y. Juco - San Jose CA, US Visweswaren Sivaramakrishnan - Cupertino CA, US Hichem M'Saad - Santa Clara CA, US
Assignee:
APPLIED MATERIALS, INC. - Santa Clara CA
International Classification:
H01L 21/3065
US Classification:
15634534
Abstract:
An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.
Name / Title
Company / Classification
Phones & Addresses
Eller Juco Owner
Juco Construction Single-Family House Construction
4656 Batten Way, San Jose, CA 95135 408-223-1648
Eller Juco Director of Engineering
Lam Research Corporation Mfg Semi Conductor Processing Equipment
222 NE Park Plz Dr, Vancouver, WA 98684 201 NE Park Plz Dr STE 295, Vancouver, WA 98684 360-260-9600, 360-260-9800, 360-260-0352
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