Egbert G Woelk

US Patent:

7390360, Jun 24, 2008

Filed:

Sep 28, 2005

Appl. No.:

11/237999

Inventors:

Deodatta Vinayak Shenai-Khatkhate - Danvers MA, US
Egbert Woelk - North Andover MA, US

Assignee:

Rohm and Haas Electronic Materials LLC - Marlborough MA

International Classification:

C30B 25/00

US Classification:

117 84, 438481

Abstract:

Compositions useful in the manufacture of compound semiconductors are provided. Methods of manufacturing compound semiconductors using these compositions are also provided.

US Patent:

7722720, May 25, 2010

Filed:

Dec 6, 2005

Appl. No.:

11/295381

Inventors:

Deodatta Vinayak Shenai-Khatkhate - Danvers MA, US
Michael L. Timmons - Durham NC, US
Charles J. Marsman - Wilbraham MA, US
Egbert Woelk - North Andover MA, US

Assignee:

Rohm and Haas Electronic Materials LLC - Marlborough MA

International Classification:

C23C 16/00
B01J 27/132

US Classification:

118726, 118715, 42725528, 502224

Abstract:

Delivery devices for delivering solid precursor compounds in the vapor phase to reactors are provided. Such devices include a precursor composition of a solid precursor compound with a layer of packing material disposed thereon. Also provided are methods for transporting a carrier gas saturated with the precursor compound for delivery into such CVD reactors.

US Patent:

8501266, Aug 6, 2013

Filed:

Mar 29, 2010

Appl. No.:

12/749048

Inventors:

Egbert Woelk - North Andover MA, US

Assignee:

Rohm and Haas Electronics Materials LLC - Marlborough MA

International Classification:

C23C 16/52

US Classification:

427 8, 4272481, 42725528, 42725534

Abstract:

Disclosed is a method of providing a constant concentration of a metal-containing precursor compound in the vapor phase in a carrier gas. Such method is particularly useful in supplying a constant concentration of a gaseous metal-containing compound to a plurality of vapor deposition reactors.

US Patent:

8555809, Oct 15, 2013

Filed:

Jan 14, 2010

Appl. No.:

12/687288

Inventors:

Egbert Woelk - North Andover MA, US

Assignee:

Rohm and Haas Electronic Materials, LLC - Marlborough MA

International Classification:

C23C 16/448
C23C 16/44
C23C 16/455
F22B 5/00
C23C 16/06
C23C 16/22

US Classification:

118723VE, 118715, 118663, 15634527, 15634524, 15634537, 122233, 122234

Abstract:

Disclosed herein is a device comprising an evaporator; and a heat exchanger; the heat exchanger being in fluid communication with evaporator; evaporator comprising an outer casing; and an inner casing that is disposed within the outer casing; the inner casing contacting a plate; wherein the inner casing encloses a first conduit that is operative to introduce a carrier fluid into evaporator; and a second conduit that is operative to remove carrier fluid entrained with a precursor; wherein the outer casing is detachably attached to the plate; the plate contacting a first precursor conduit that is operative to introduce the precursor into evaporator from the heat exchanger; where the heat exchanger is disposed proximate to evaporator at a distance effective to maintain the precursor in evaporator at a substantially constant temperature when the ambient temperature around the heat exchanger and evaporator fluctuates by an amount of up to about 35 C.

US Patent:

20040197945, Oct 7, 2004

Filed:

Apr 2, 2004

Appl. No.:

10/816356

Inventors:

Egbert Woelk - North Andover MA, US
Deodatta Shenai-Khatkhate - Danvers MA, US

Assignee:

Rohm and Haas Electronic Materials L.L.C. - Marlborough MA

International Classification:

H01L051/40

US Classification:

438/099000

Abstract:

Germanium compounds suitable for use as vapor phase deposition precursors for germanium films are provided. Methods of depositing films containing germanium using such compounds are also provided. Such germanium films are particularly useful in the manufacture of electronic devices.

US Patent:

20060037540, Feb 23, 2006

Filed:

Jul 28, 2005

Appl. No.:

11/191751

Inventors:

Egbert Woelk - North Andover MA, US
Deodatta Shenai-Khatkhate - Danvers MA, US
Ronald Dicarlo - Danville NH, US

Assignee:

Rohm and Haas Electronic Materials LLC - Marlborough MA

International Classification:

C23C 16/00

US Classification:

118726000, 427250000

Abstract:

Systems for delivering solid organometallic compounds in the vapor phase to reactors are provided. Such systems include a dual-chambered cylinder design for use with a frit of solid organometallic source material for chemical vapor phase deposition systems, and a method for transporting a carrier gas saturated with the organometallic compound for delivery into such deposition systems.

US Patent:

20070077733, Apr 5, 2007

Filed:

Nov 27, 2006

Appl. No.:

11/604475

Inventors:

Egbert Woelk - North Andover MA, US
Deodatta Shenai-Khatkhate - Danvers MA, US

Assignee:

Rohm and Haas Electronic Materials LLC - Marlborough MA

International Classification:

C23C 16/00

US Classification:

438478000, 118715000

Abstract:

Germanium compounds suitable for use as vapor phase deposition precursors for germanium films are provided. Methods of depositing films containing germanium using such compounds are also provided. Such germanium films are particularly useful in the manufacture of electronic devices.

US Patent:

20070154637, Jul 5, 2007

Filed:

Dec 22, 2005

Appl. No.:

11/316466

Inventors:

Deodatta Vinayak Shenai-Khatkhate - Danvers MA, US
Egbert Woelk - North Andover MA, US

Assignee:

Rohm and Haas Electronic Materials LLC - Marlborough MA

International Classification:

C23C 16/00

US Classification:

4272481, 118715

Abstract:

Compositions including germanium compounds suitable for use as vapor phase deposition precursors for germanium-containing films are provided. Methods of depositing films containing germanium using such compositions are also provided. Such germanium-containing films are particularly useful in the manufacture of electronic devices.