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Dennis C Fenske

age ~71

from Isabella, MO

Also known as:
  • Dennis Charmaine Fenske
  • Dennis Fenske
  • Dennis Craig Fenske

Dennis Fenske Phones & Addresses

  • Isabella, MO
  • 15891 Meridian Rd, Salinas, CA 93907
  • Prunedale, CA
  • Branson, MO
  • 605 San Lorenzo Ave, Felton, CA 95018 • 831-335-7712
  • Monterey, CA
  • San Luis Obispo, CA

Us Patents

  • Plasma Enhanced Chemical Processing Reactor And Method

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  • US Patent:
    6375750, Apr 23, 2002
  • Filed:
    May 18, 2000
  • Appl. No.:
    09/575217
  • Inventors:
    Ron van Os - Sunnyvale CA
    William J. Durbin - Capitola CA
    Richard H. Matthiesen - San Jose CA
    Dennis C. Fenske - Felton CA
    Eric D. Ross - Santa Cruz CA
  • Assignee:
    Applied Materials, Inc. - Santa Clara CA
  • International Classification:
    C23C 1600
  • US Classification:
    118728, 118500
  • Abstract:
    An apparatus for processing a substrate comprising a processing chamber and a substrate support system comprising an electrostatic chuck having a body portion and a substrate support surface and one or more arms extending from the body portion to mount the electrostatic chuck to a side wall portion of the processing chamber is provided.
  • Plasma Enhanced Chemical Processing Reactor And Method

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  • US Patent:
    2002007, Jun 27, 2002
  • Filed:
    Nov 16, 2001
  • Appl. No.:
    09/994008
  • Inventors:
    Ron van Os - Sunnyvale CA,
    William Durbin - Capitola CA,
    Richard Matthiesen - Scotts Valley CA,
    Dennis Fenske - Felton CA,
    Eric Ross - Santa Cruz CA,
  • Assignee:
    Applied Materials , Inc.
  • International Classification:
    C23C016/00
    C23F001/00
  • US Classification:
    118/72300I, 118/7230MW, 156/345410, 156/345480
  • Abstract:
    A plasma enhanced chemical processing reactor and method. The reactor includes a plasma chamber including a first gas injection manifold and a source of electromagnetic energy. The plasma chamber is in communication with a process chamber which includes a wafer support and a second gas manifold. The plasma generated in the plasma chamber extends into the process chamber and interacts with the reactive gases to deposit a layer of material on the wafer. The reactor also includes a vacuum system for exhausting the reactor. The method includes the steps of generating a plasma within the plasma chamber, introducing at least one gaseous chemical into the process chamber proximate to the wafer support and applying r.f. gradient to induce diffusion of the plasma to the area proximate the wafer support.
  • Plasma Enhanced Chemical Processing Reactor

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  • US Patent:
    6178918, Jan 30, 2001
  • Filed:
    Jun 5, 1998
  • Appl. No.:
    9/092565
  • Inventors:
    Ron van Os - Sunnyvale CA
    William J. Durbin - Capitola CA
    Richard H. Matthiesen - San Jose CA
    Dennis C. Fenske - Felton CA
    Eric D. Ross - Santa Cruz CA
  • Assignee:
    Applied Materials, Inc. - Santa Clara CA
  • International Classification:
    C23C 1600
  • US Classification:
    118723R
  • Abstract:
    A plasma enhance chemical processing reactor and method. The reactor includes a plasma chamber and a source of electromagnetic energy. The plasma chamber is in communication with a process chamber which includes a wager support and a gas manifold. The plasma generated in the plasma chamber extends into the process chamber and interacts with the reactive gases to deposit a layer of material on the wafer. The reactor also includes a vacuum system for exhausting the reactor. The method includes the steps of generating a plasma within the plasma chamber, introducing at least one gaseous chemical into the process chamber proximate to the wafer support and applying r. f. gradient to induce diffusion of the plasma to the area proximate the wafer support.
  • Plasma Enhanced Chemical Processing Reactor And Method

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  • US Patent:
    5792272, Aug 11, 1998
  • Filed:
    Aug 12, 1997
  • Appl. No.:
    8/909580
  • Inventors:
    Ron van Os - Sunnyvale CA
    William J. Durbin - Capitola CA
    Richard H. Matthiesen - Scotts Valley CA
    Dennis C. Fenske - Felton CA
    Eric D. Ross - Santa Cruz CA
  • Assignee:
    Watkins-Johnson Company - Palo Alto CA
  • International Classification:
    C23C 1600
  • US Classification:
    118723IR
  • Abstract:
    A plasma enhanced chemical processing reactor and method. The reactor includes a plasma chamber including a first gas injection manifold and a source of electromagnetic energy. The plasma chamber is in communication with a process chamber which includes a wafer support and a second gas manifold. The plasma generated in the plasma chamber extends into the process chamber and interacts with the reactive gases to deposit a layer of material on the wafer. The reactor also includes a vacuum system for exhausting the reactor. The method includes the steps of generating a plasma within the plasma chamber, introducing at least one gaseous chemical into the process chamber proximate to the wafer support and applying r. f. gradient to induce diffusion of the plasma to the area proximate the wafer support.
  • Plasma Enchanced Chemical Method

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  • US Patent:
    6001267, Dec 14, 1999
  • Filed:
    Feb 21, 1997
  • Appl. No.:
    8/804212
  • Inventors:
    Ron van Os - Sunnyvale CA
    William J. Durbin - Capitola CA
    Richard H. Matthiesen - San Jose CA
    Dennis C. Fenske - Felton CA
    Eric D. Ross - Santa Cruz CA
  • Assignee:
    Watkins-Johnson Company - Palo Alto CA
  • International Classification:
    B44C 122
    C03C 1500
  • US Classification:
    216 67
  • Abstract:
    A plasma enhanced chemical processing reactor and method. The reactor includes a plasma chamber including a first gas injection manifold and a source of electromagnetic energy. The plasma chamber is in communication with a process chamber which includes a wafer support and a second gas manifold. The reactor also includes a vacuum system for exhausting the reactor. The method includes the steps of generating a plasma within the plasma chamber, introducing at least one gaseous chemical into the process chamber proximate to the wafer support, applying r. f. gradient to induce diffusion of the plasma to the area proximate the wafer support, and exhausting the reactor in a substantially symmetrical manner.

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