Dennis C Fenske

US Patent:

6375750, Apr 23, 2002

Filed:

May 18, 2000

Appl. No.:

09/575217

Inventors:

Ron van Os - Sunnyvale CA
William J. Durbin - Capitola CA
Richard H. Matthiesen - San Jose CA
Dennis C. Fenske - Felton CA
Eric D. Ross - Santa Cruz CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

118728, 118500

Abstract:

An apparatus for processing a substrate comprising a processing chamber and a substrate support system comprising an electrostatic chuck having a body portion and a substrate support surface and one or more arms extending from the body portion to mount the electrostatic chuck to a side wall portion of the processing chamber is provided.

US Patent:

20020078893, Jun 27, 2002

Filed:

Nov 16, 2001

Appl. No.:

09/994008

Inventors:

Ron van Os - Sunnyvale CA, US
William Durbin - Capitola CA, US
Richard Matthiesen - Scotts Valley CA, US
Dennis Fenske - Felton CA, US
Eric Ross - Santa Cruz CA, US

Assignee:

Applied Materials , Inc.

International Classification:

C23C016/00
C23F001/00

US Classification:

118/72300I, 118/7230MW, 156/345410, 156/345480

Abstract:

A plasma enhanced chemical processing reactor and method. The reactor includes a plasma chamber including a first gas injection manifold and a source of electromagnetic energy. The plasma chamber is in communication with a process chamber which includes a wafer support and a second gas manifold. The plasma generated in the plasma chamber extends into the process chamber and interacts with the reactive gases to deposit a layer of material on the wafer. The reactor also includes a vacuum system for exhausting the reactor. The method includes the steps of generating a plasma within the plasma chamber, introducing at least one gaseous chemical into the process chamber proximate to the wafer support and applying r.f. gradient to induce diffusion of the plasma to the area proximate the wafer support.

US Patent:

61789186, Jan 30, 2001

Filed:

Jun 5, 1998

Appl. No.:

9/092565

Inventors:

Ron van Os - Sunnyvale CA
William J. Durbin - Capitola CA
Richard H. Matthiesen - San Jose CA
Dennis C. Fenske - Felton CA
Eric D. Ross - Santa Cruz CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

118723R

Abstract:

A plasma enhance chemical processing reactor and method. The reactor includes a plasma chamber and a source of electromagnetic energy. The plasma chamber is in communication with a process chamber which includes a wager support and a gas manifold. The plasma generated in the plasma chamber extends into the process chamber and interacts with the reactive gases to deposit a layer of material on the wafer. The reactor also includes a vacuum system for exhausting the reactor. The method includes the steps of generating a plasma within the plasma chamber, introducing at least one gaseous chemical into the process chamber proximate to the wafer support and applying r. f. gradient to induce diffusion of the plasma to the area proximate the wafer support.

US Patent:

57922721, Aug 11, 1998

Filed:

Aug 12, 1997

Appl. No.:

8/909580

Inventors:

Ron van Os - Sunnyvale CA
William J. Durbin - Capitola CA
Richard H. Matthiesen - Scotts Valley CA
Dennis C. Fenske - Felton CA
Eric D. Ross - Santa Cruz CA

Assignee:

Watkins-Johnson Company - Palo Alto CA

International Classification:

C23C 1600

US Classification:

118723IR

Abstract:

A plasma enhanced chemical processing reactor and method. The reactor includes a plasma chamber including a first gas injection manifold and a source of electromagnetic energy. The plasma chamber is in communication with a process chamber which includes a wafer support and a second gas manifold. The plasma generated in the plasma chamber extends into the process chamber and interacts with the reactive gases to deposit a layer of material on the wafer. The reactor also includes a vacuum system for exhausting the reactor. The method includes the steps of generating a plasma within the plasma chamber, introducing at least one gaseous chemical into the process chamber proximate to the wafer support and applying r. f. gradient to induce diffusion of the plasma to the area proximate the wafer support.

US Patent:

60012676, Dec 14, 1999

Filed:

Feb 21, 1997

Appl. No.:

8/804212

Inventors:

Ron van Os - Sunnyvale CA
William J. Durbin - Capitola CA
Richard H. Matthiesen - San Jose CA
Dennis C. Fenske - Felton CA
Eric D. Ross - Santa Cruz CA

Assignee:

Watkins-Johnson Company - Palo Alto CA

International Classification:

B44C 122
C03C 1500

US Classification:

216 67

Abstract:

A plasma enhanced chemical processing reactor and method. The reactor includes a plasma chamber including a first gas injection manifold and a source of electromagnetic energy. The plasma chamber is in communication with a process chamber which includes a wafer support and a second gas manifold. The reactor also includes a vacuum system for exhausting the reactor. The method includes the steps of generating a plasma within the plasma chamber, introducing at least one gaseous chemical into the process chamber proximate to the wafer support, applying r. f. gradient to induce diffusion of the plasma to the area proximate the wafer support, and exhausting the reactor in a substantially symmetrical manner.