David R Zywotko

US Patent:

20210242031, Aug 5, 2021

Filed:

Feb 1, 2021

Appl. No.:

17/164649

Inventors:

- Tokyo, JP
- Boulder CO, US
Jacques Faguet - Austin TX, US
David Zywotko - Boulder CO, US
Steven M. George - Boulder CO, US

International Classification:

H01L 21/311
H01L 21/02

Abstract:

Method for selective etching of materials using an ultrathin etch stop layer (ESL), where the ESL is effective at a thickness as small as approximately one monolayer using atomic layer etching (ALE). A substrate processing method includes depositing a first film on a substrate, depositing a second film on the first film, and selectively etching the second film relative to the first film using an ALE process, where the etching self-terminates at an interface of the second film and the first film.

US Patent:

20190055654, Feb 21, 2019

Filed:

Jul 30, 2018

Appl. No.:

16/049258

Inventors:

- Denver CO, US
NICHOLAS RAY JOHNSON - LOUISVILLE CO, US
JAIME WILLADEAN DUMONT - RACINE WI, US
AMY ELIZABETH MARQUARDT - CHICAGO IL, US
YOUNGHEE LEE - BOULDER CO, US
DAVID RICHARD ZYWOTKO - BOULDER CO, US
AZIZ ABDULAGATOV - BOULDER CO, US

International Classification:

C23F 4/00

Abstract:

The invention includes a method of promoting atomic layer etching (ALE) of a surface. In certain embodiments, the method comprises sequential reactions with a metal precursor and a halogen-containing gas. In other embodiments, the etching rate is increased by removing residual species bound to and/or adsorbed onto the surface.