Anna Gombar

US Patent:

42376009, Dec 9, 1980

Filed:

Nov 16, 1978

Appl. No.:

5/961471

Inventors:

Arye Rosen - Cherry Hill NJ
Anna M. Gombar - Princeton NJ
Edward Mykietyn - West Windsor NJ

Assignee:

RCA Corporation - New York NY

International Classification:

B01J 1700

US Classification:

29577

Abstract:

A semiconductor wafer is appropriately doped to create a P-N or P-I-N junction, and metallized on both its planar surfaces with electrode material. The wafer is then bonded to a second similarly processed wafer. Without damaging the semiconductor material, the stacked wafer is processed so as to delineate a plurality of diodes on each side of the center metallization, such that the diodes on each side are registered with each other. The center metallization is then cut so as to yield a plurality of stacked semiconductor diodes.