Andrei A Istratov

US Patent:

20060289091, Dec 28, 2006

Filed:

Jun 5, 2006

Appl. No.:

11/447223

Inventors:

Anthony Buonassisi - San Diego CA, US
Matthias Heuer - Berkeley CA, US
Andrei Istratov - Albany CA, US
Matthew Pickett - Barkeley CA, US
Mathew Marcus - Berkeley CA, US
Eicke Weber - Piedmont CA, US

International Classification:

C22C 19/03

US Classification:

148426000

Abstract:

The present invention relates to the internal gettering of impurities in semiconductors by metal alloy clusters. In particular, intermetallic clusters are formed within silicon, such clusters containing two or more transition metal species. Such clusters have melting temperatures below that of the host material and are shown to be particularly effective in gettering impurities within the silicon and collecting them into isolated, less harmful locations. Novel compositions for some of the metal alloy clusters are also described.

US Patent:

20100213406, Aug 26, 2010

Filed:

Apr 14, 2010

Appl. No.:

12/798956

Inventors:

Anthony Buonassisi - San Diego CA, US
Matthias Heuer - Berkeley CA, US
Andrei A. Istratov - Albany CA, US
Matthew D. Pickett - Berkeley CA, US
Matthew A. Marcus - Berkeley CA, US
Eicke R. Weber - Piedmont CA, US

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

H01J 7/18

US Classification:

2521816

Abstract:

The present invention relates to the internal gettering of impurities in semiconductors by metal alloy clusters. In particular, intermetallic clusters are formed within silicon, such clusters containing two or more transition metal species. Such clusters have melting temperatures below that of the host material and are shown to be particularly effective in gettering impurities within the silicon and collecting them into isolated, less harmful locations. Novel compositions for some of the metal alloy clusters are also described.