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Alexander Ksendzov

age ~66

from La Crescenta, CA

Also known as:
  • Alex Ksendzov
  • Alexander R
  • Ksendzov Alexander
Phone and address:
2750 Los Olivos Ln, Glendale, CA 91214

Alexander Ksendzov Phones & Addresses

  • 2750 Los Olivos Ln, La Crescenta, CA 91214
  • 3115 Foothill Blvd, La Crescenta, CA 91214
  • 341 Keystone St, Burbank, CA 91506 • 818-845-9541
  • Pasadena, CA
  • Los Angeles, CA

Emails

Us Patents

  • Tunable Semiconductor Laser Having Cavity With Wavelength Selective Mirror And Mach-Zehnder Interferometer

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  • US Patent:
    6633593, Oct 14, 2003
  • Filed:
    Dec 28, 2001
  • Appl. No.:
    10/035986
  • Inventors:
    Alexander Ksendzov - La Crescenta CA
    Randy Dean May - Montrose CA
  • Assignee:
    SpectraSensors, Inc. - Altadena CA
  • International Classification:
    H01S 310
  • US Classification:
    372 20, 372 32, 372 98, 372 92, 372 94
  • Abstract:
    The semiconductor laser has a resonance cavity composed of a gain chip, a Mach-Zehnder wide tuning port, and a wavelength-selective mirror component formed either as a ring resonator or a reflective Fabry-Perot etalon. Optical signals generated by the gain chip propagate through the wide tuning port and into the wavelength-selective mirror component and are then reflected back to the gain chip. The wavelength-selective mirror component is configured to reflect only those optical signals having wavelengths within a set of sharp peaks so that the laser cavity resonates only within the sharp peaks. The wavelength-selective mirror component is heated to adjust internal dimensions to maintain one of the sharp peaks at a selected emission wavelength. As optical signals pass through the wide tuning port, the signals are split between two channels of differing lengths resulting in optical interference. The optical interference limits the ability of the laser cavity to resonate at wavelengths other than near the center of a single broad peak determined by the relative lengths of the two channels.
  • Tunable Semiconductor Laser Having Cavity With Ring Resonator Mirror And Mach-Zehnder Interferometer

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  • US Patent:
    6690687, Feb 10, 2004
  • Filed:
    Jan 2, 2001
  • Appl. No.:
    09/753285
  • Inventors:
    Alexander Ksendzov - La Crescenta CA
    Randy Dean May - Montrose CA
  • Assignee:
    SpectraSensors, Inc. - Altadena CA
  • International Classification:
    H01S 310
  • US Classification:
    372 20, 372 92, 372 94, 372 32
  • Abstract:
    A semiconductor laser is provided having a cavity including a gain chip, a Mach-Zehnder wide tuning port, and a ring resonator mirror. Optical signals generated by the gain chip propagate through the Mach-Zehnder wide tuning port and into the ring resonator mirror where the optical signals are reflected back through the Mach-Zehnder wide tuning port to the gain chip. The ring resonator is configured to reflect only those optical signals back into the laser cavity having wavelengths within a set of sharp peaks and the laser cavity therefore can resonate only within one of the sharp peaks. The ring resonator mirror is heated to adjust its dimensions so as to maintain one of the sharp peaks at a selected emission wavelength. As optical signals reflected from the ring resonator pass through the Mach-Zehnder wide tuning port, the signals are split between two channels of differing lengths resulting in optical interference. The optical interference limits the ability of the laser cavity to resonate at wavelengths other than near the center of a single broad peak determined by the relative lengths of the two channels.
  • Ring Resonator Based Narrow-Linewidth Semiconductor Lasers

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  • US Patent:
    6856641, Feb 15, 2005
  • Filed:
    Jan 25, 2002
  • Appl. No.:
    10/057427
  • Inventors:
    Alexander Ksendzov - La Crescenta CA, US
  • Assignee:
    California Institute of Technology - Pasadena CA
  • International Classification:
    H01S003/08
  • US Classification:
    372108, 372 92, 372 94, 372 96, 372 98, 372102
  • Abstract:
    The present invention is a method and apparatus for using ring resonators to produce narrow linewidth hybrid semiconductor lasers. According to one embodiment of the present invention, the narrow linewidths are produced by combining the semiconductor gain chip with a narrow pass band external feedback element. The semi conductor laser is produced using a ring resonator which, combined with a Bragg grating, acts as the external feedback element. According to another embodiment of the present invention, the proposed integrated optics ring resonator is based on plasma enhanced chemical vapor deposition (PECVD) SiO/SiON/SiOwaveguide technology.
  • Hybrid Narrow -Linewidth Semiconductor Lasers

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  • US Patent:
    20020037025, Mar 28, 2002
  • Filed:
    Sep 25, 2001
  • Appl. No.:
    09/964198
  • Inventors:
    Randall Bartman - Altadena CA, US
    Alexander Ksendzov - La Crescenta CA, US
    Serge Dubovitsky - Los Angeles CA, US
  • International Classification:
    H01S003/04
    H01S005/00
    H01S003/08
  • US Classification:
    372/050000, 372/096000, 372/036000
  • Abstract:
    The present invention is a method and apparatus for creating a narrow linewidth hybrid semiconductor laser using silicon-oxide and silicone-oxynitride based external feedback elements. These feedback elements use Bragg gratings formed by periodic variation of the refractive index with a resonate optical reflector. The laser has a narrow linewidth (in the tens of kHz range), which can be accurately tunable to facilitate locking to an ultra-stable cavity. A semiconductor optical gain chip is soldered to a micromachined silicon bench. This semiconductor optical gain chip is coupled into a silicon-oxide/silicon-oxinitride/silicon-oxide (SiO/SiON/SiO) waveguide terminating in an appropriate feedback element that facilitates linewidth reduction. In order to suppress the loss and scattering at the SiO/SiON/SiOinterface and due to residual facet reflectance, an antireflection coating is applied. In order to achieve low loss due to mode mismatch, the waveguide modes are tailored to match the gain chip modes.
  • Strained Layer Inp/Ingaas Quantum Well Laser

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  • US Patent:
    52572765, Oct 26, 1993
  • Filed:
    Apr 3, 1992
  • Appl. No.:
    7/862722
  • Inventors:
    Siamak Forouhar - Pasadena CA
    Anders G. Larsson - Billdal, SE
    Alexander Ksendzov - Burbank CA
    Robert J. Lang - Altadena CA
  • Assignee:
    California Institute of Technology - Pasadena CA
  • International Classification:
    H01S 319
  • US Classification:
    372 45
  • Abstract:
    Strained layer single or multiple quantum well lasers include an InP substrate, a pair of lattice-matched InGaAsP quarternary layers epitaxially grown on the substrate surrounding a pair of lattice matched In. sub. 53 Ga. sub. 47 As ternary layers surrounding one or more strained active layers of epitaxially grown, lattice-mismatched In. sub. 75 Ga. sub. 25 As. The level of strain is selected to control the bandgap energy to produce laser output having a wavelength in the range of 1. 6 to 2. 5. mu. m. The multiple quantum well structure uses between each active layer. Diethyl zinc is used for p-type dopant in an InP cladding layer at a concentration level in the range of about 5. times. 10. sup. 17 /cm. sup. 3 to about 2. times. 10. sup. 18 /cm. sup. 3. Hydrogen sulfide is used for n-type dopant in the substrate ORIGIN OF THE INVENTION The invention described herein was made in the performance of work under a NASA contract, and is subject to the provisions of Public Law 96-517 (35 USC 202) in which the Contractor has elected to retain title.

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