Member of Technical Staff at Lawrence Livermore National Laboratory
Location:
San Francisco Bay Area
Industry:
Semiconductors
Work:
Lawrence Livermore National Laboratory - Livermore, CA since Feb 2010
Member of Technical Staff
LLNL - Livermore, CA Feb 2007 - Feb 2010
Post Doctoral Researcher
HRL Laboratories LLC - Malibu, CA Jul 2004 - Sep 2006
Graduate Student Intern
UCSD - San Diego, CA 2000 - 2006
Graduate Student Researcher
Education:
University of California, San Diego 2000 - 2006
PhD, EE
Northwestern University 1996 - 2000
Bachelor of Science (B.S.), Electrical Engineering
Global Security Directorate Gold Award LLNL Engineering Directorate Award LLNL Increasing Engineering’s National Recognition though Publications Engineering Directorate Award LLNL LLNL Pillar Neutron Detector Team Global Security Directorate Award LLNL Developing Stronger Materials Detection Portfolio Graduate Student Teaching Fellowship UCSD Jacobs School of Engineering Wooley Leadership and Scholarship Fellowship UCSD
Lawrence Livermore National Laboratory
Associate Program Leader Warfighter and Force Protection
Lawrence Livermore National Laboratory
Member of Technical Staff
Education:
Uc San Diego 2000 - 2006
Doctorates, Doctor of Philosophy, Electronics Engineering, Philosophy
Northwestern University
Rebecca J. Nikolic - Oakland CA, US Adam M. Conway - Dublin CA, US Art J. Nelson - Trieste, IT Stephen A. Payne - Castro Valley CA, US
Assignee:
Lawrence Livermore National Security, LLC - Livermore CA
International Classification:
G01T 1/24
US Classification:
25037014, 25037009, 25037013, 438 57, 257E21002
Abstract:
In one embodiment, a system comprises a semiconductor gamma detector material and a hole blocking layer adjacent the gamma detector material, the hole blocking layer resisting passage of holes therethrough. In another embodiment, a system comprises a semiconductor gamma detector material, and an electron blocking layer adjacent the gamma detector material, the electron blocking layer resisting passage of electrons therethrough, wherein the electron blocking layer comprises undoped HgCdTe. In another embodiment, a method comprises forming a hole blocking layer adjacent a semiconductor gamma detector material, the hole blocking layer resisting passage of holes therethrough. Additional systems and methods are also presented.
Method To Planarize Three-Dimensional Structures To Enable Conformal Electrodes
Rebecca J. Nikolic - Oakland CA, US Adam M. Conway - Livermore CA, US Robert T. Graff - Modesto CA, US Catherine Reinhardt - Livermore CA, US Lars F. Voss - Pleasanton CA, US Qinghui Shao - Riverside CA, US
Assignee:
Lawrence Livermore National Security, LLC - Livermore CA
International Classification:
G01T 3/00
US Classification:
25039001
Abstract:
Methods for fabricating three-dimensional PIN structures having conformal electrodes are provided, as well as the structures themselves. The structures include a first layer and an array of pillars with cavity regions between the pillars. A first end of each pillar is in contact with the first layer. A segment is formed on the second end of each pillar. The cavity regions are filled with a fill material, which may be a functional material such as a neutron sensitive material. The fill material covers each segment. A portion of the fill material is etched back to produce an exposed portion of the segment. A first electrode is deposited onto the fill material and each exposed segment, thereby forming a conductive layer that provides a common contact to each the exposed segment. A second electrode is deposited onto the first layer.
Method For Manufacturing Solid-State Thermal Neutron Detectors With Simultaneous High Thermal Neutron Detection Efficiency (>50%) And Neutron To Gamma Discrimination (>1.0E4)
Rebecca J. Nikolic - Oakland CA, US Adam M. Conway - Livermore CA, US Daniel Heineck - La Jolla CA, US Lars F. Voss - Livermore CA, US Tzu Fang Wang - Danville CA, US Qinghui Shao - Fremont CA, US
Assignee:
Lawrence Livermore National Security, LLC - Livermore CA
International Classification:
G01T 3/00
US Classification:
25039001
Abstract:
Methods for manufacturing solid-state thermal neutron detectors with simultaneous high thermal neutron detection efficiency (>50%) and neutron to gamma discrimination (>10) are provided. A structure is provided that includes a p+ region on a first side of an intrinsic region and an n+ region on a second side of the intrinsic region. The thickness of the intrinsic region is minimized to achieve a desired gamma discrimination factor of at least 1. 0E+04. Material is removed from one of the p+ region or the n+ region and into the intrinsic layer to produce pillars with open space between each pillar. The open space is filed with a neutron sensitive material. An electrode is placed in contact with the pillars and another electrode is placed in contact with the side that is opposite of the intrinsic layer with respect to the first electrode.
Mixed Ionic-Electronic Conductor-Based Radiation Detectors And Methods Of Fabrication
Adam Conway - Livermore CA, US Patrick R. Beck - Livermore CA, US Robert T. Graff - Modesto CA, US Art Nelson - Livermore CA, US Rebecca J. Nikolic - Oakland CA, US Stephen A. Payne - Castro Valley CA, US Lars Voss - Livermore CA, US Hadong Kim - Methuen MA, US
Assignee:
Lawrence Livermore National Security LLC - Livermore CA
A method of fabricating a mixed ionic-electronic conductor (e.g. TlBr)-based radiation detector having halide-treated surfaces and associated methods of fabrication, which controls polarization of the mixed ionic-electronic MIEC material to improve stability and operational lifetime.
Rebecca J. Nikolic - Oakland CA, US Adam M. Conway - Livermore CA, US Robert T. Graff - Modesto CA, US Joshua D. Kuntz - Livermore CA, US Catherine Reinhardt - Livermore CA, US Lars F. Voss - Livermore CA, US Chin Li Cheung - Lincoln NE, US Daniel Heineck - San Diego CA, US
Assignee:
Lawrence Livermore National Security, LLc - Livermore CA
International Classification:
H01L 31/08 H01L 31/18
US Classification:
257429, 438 37
Abstract:
Three-dimensional boron particle loaded thermal neutron detectors utilize neutron sensitive conversion materials in the form of nano-powders and micro-sized particles, as opposed to thin films, suspensions, paraffin, etc. More specifically, methods to infiltrate, intersperse and embed the neutron nano-powders to form two-dimensional and/or three-dimensional charge sensitive platforms are specified. The use of nano-powders enables conformal contact with the entire charge-collecting structure regardless of its shape or configuration.
Adam Conway - Livermore CA, US Rebecca J. Nikolic - Oakland CA, US Cedric Rocha Leao - Oakland CA, US Qinghui Shao - Fremont CA, US
International Classification:
H01L 29/06 H01L 21/02
US Classification:
257 77, 257618, 257615, 257 76, 438 5
Abstract:
In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.
An networking system is disclosed in accordance with an embodiment of the present invention to include a field availability monitoring system (FAMS) for receiving problems associated with one or more field replaceable units (FRUs), qualifying the problem and transmitting the problem for tracking thereof so as to improve the quality of components used in the FRUs.
A high-voltage switch is adapted for use as a medium-voltage direct current circuit breaker, which provides a low-cost, small-footprint device to mitigate system faults. In one example, a method for operating a wideb and optical device includes illuminating the wide bandgap optical device with a light within a first range of wavelengths and a first average intensity, allowing a current to propagate therethrough without substantial absorption of the current, illuminating the wide bandgap optical device with light within the first range of wavelengths and a second average intensity that is lower than the first average intensity to allow a sustained current flow though the wide bandgap optical device, and illuminating the wide bandgap optical device with light within a second range of wavelengths to stop or substantially restrict propagation of the current through the wide gap material.
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