Francois Doniat - Wilmington DE, US Matthew L. Fisher - Allen TX, US Alan D. Zdunek - Chicago IL, US Alexandro A. Barajas - Montgomery IL, US Ian Suni - Potsdam NY, US Xiangfeng Chu - Potsdam NY, US Abhinav Tripathi - Potsdam NY, US Yuzhuo Li - Norwood NY, US
International Classification:
B23H 3/00
US Classification:
205662, 205682
Abstract:
Compositions and methods suitable for the electrochemical mechanical planarization of a conductive material layer on a semiconductor workpiece. Compositions contain a phosphonic acid based electrolyte, a corrosion inhibitor, a chelating agent, a pH adjusting agent, and a solvent as the remainder.
3D Memory Device With Top Wordline Contact Located In Protected Region During Planarization
Embodiments of the present disclosure are directed towards a memory device including a top wordline contact located in a region that is protected from erosion during a planarization process, e.g., chemical mechanical polish (CMP). In embodiments, a plurality of wordlines are formed in a stack of multiple layers and a plurality of wordline contacts are formed to intersect with the plurality of wordlines. In embodiments, the stack forms a staircase and each of the plurality of wordline contacts lands on a corresponding each of the wordlines proximate to an edge of the staircase such that a top wordline contact lands in a region on a top wordline previously covered by a sacrificial layer. In some embodiments, the region is proximate to a raised notch at an edge of the staircase. Other embodiments may be described and claimed.
Integrated Word Line Contact Structures In Three-Dimensional (3D) Memory Array
- Santa Clara CA, US Kwame Nkrumah Eason - East Palo Alto CA, US Abhinav Tripathi - San Jose CA, US Ebony Lynn Mays - Morgan Hill CA, US Jessica Sevanne Kachian - Santa Clara CA, US Ralf Buengener - San Jose CA, US
A memory array including integrated word line (WL) contact structures are disclosed. The memory array comprises a plurality of WLs that includes at least a first WL and a second WL. An integrated WL contact structure includes a first WL contact and a second WL contact for the first WL and the second WL, respectively. The second WL contact extends through the first WL contact. For example, the second WL contact is nested within the first WL contact. An intervening isolation material isolates the second WL contact from the first WL contact. In an example, the second WL contact extends through a hole in the first WL to reach the second WL. The isolation material isolates the second WL contact from sidewalls of the hole in the first WL.
Intel Corporation since Apr 2012
Staff Engineer
Intel Jan 2009 - Apr 2012
Process Engineer
Feedback Business Consulting Services Pvt Ltd 2003 - 2004
Research Executive
Education:
Clarkson University 2004 - 2008
Doctor of Philosophy (PhD), Chemical Engineering
B. M. S. College of Engineering 1999 - 2003
B.E, Chemical Engineering
Visvesvaraya Technological University 1999 - 2003
Bachelor of Engineering (BE), Chemical Engineering
Skills:
Thin Films Process Engineering Product Development Nanotechnology Electrochemistry Silicon Team Management Data Analysis Process Simulation Competitive Analysis Business Strategy Semiconductors Materials Science Market Research Project Management Research Business Development Semiconductor Process Semiconductor Fabrication Chemical Mechanical Polishing Business Analysis Statistics Process Development Process Transfer Process Control Biosensors Nanostructures Nanofabrication Electrochemical Characterization Electrochemical Engineering Design of Experiments Characterization Research and Development Engineering Manufacturing Statistical Process Control Matlab Semiconductor Industry
Equirus Capital - Investment Banking Analyst (2010)
Abhinav Tripathi
Work:
ONGC
Education:
Kendriya vidyalaya
Abhinav Tripathi
Education:
St johns mahrauli, School of Management Sciences,varanlasi
Abhinav Tripathi
Education:
Pushpa convent - T.I.T BHOPAL
About:
The third-rate mind is only happy when it is thinking with the majority. The second-rate mind is only happy when it is thinking with the minority. The first-rate mind is only happy when it is thinking.