Aaditya M Mahajan

US Patent:

20050012030, Jan 20, 2005

Filed:

Jul 16, 2003

Appl. No.:

10/621694

Inventors:

Aaditya Mahajan - Addison TX, US
Edward Beam - Plano TX, US
Jose Jiminez - Dallas TX, US
Andrew Ketterson - Dallas TX, US

International Classification:

H01L031/00

US Classification:

250214100

Abstract:

A photodetector includes a high-indium-concentration (H-I-C) absorption layer having a Group III sublattice indium concentration greater than 53%. The H-I-C absorption layer improves responsivity without decreasing bandwidth. The photoconversion structure that includes the H-I-C absorption layer can be formed on any type of substrate through the use of a metamorphic buffer layer to provide a lattice constant gradient between the photoconversion structure and the substrate. The responsivity of the photodetector can be further improved by passing an incoming optical signal through the H-I-C absorption layer at least twice.