Manuel R Rivera

US Patent:

20070187386, Aug 16, 2007

Filed:

Feb 10, 2006

Appl. No.:

11/351816

Inventors:

Sang-Shin Kim - Glen Ivy CA, US
Manuel Rivera - San Jose CA, US
Suk-Dong Hong - Busan, KR

Assignee:

POONGSAN MICROTEC CORPORATION - BUSAN

International Classification:

H01L 21/00
F27D 11/00

US Classification:

219385000, 438038000

Abstract:

Novel methods and apparatuses for annealing semiconductor devices in a high pressure gas environment. According to an embodiment, the annealing vessel has a dual chamber structure, and potentially toxic, flammable, or otherwise reactive gas is confined in an inner chamber which is protected by pressures of inert gas contained in the outer chamber. The incoming gas delivery system and exhaust gas venting system are likewise protected by various methods. Embodiments of the present invention can be used, for example, for high-K gate dielectric anneal, post metallization sintering anneal, and forming gas anneal in the semiconductor manufacturing process.

US Patent:

20090148965, Jun 11, 2009

Filed:

Feb 4, 2009

Appl. No.:

12/322665

Inventors:

Sang-Shin Kim - Glen Ivy CA, US
Manuel Scott Rivera - San Jose CA, US
Suk-Dong Hong - Busan, KR

Assignee:

POONGSAN MICROTEC CORPORATION - BUSAN

International Classification:

H01L 21/66
H01L 21/30

US Classification:

438 14, 438795, 257E21525, 257E21211

Abstract:

Novel methods and apparatuses for annealing semiconductor devices in a high pressure gas environment. According to an embodiment, the annealing vessel has a dual chamber structure, and potentially toxic, flammable, or otherwise reactive gas is confined in an inner chamber which is protected by pressures of inert gas contained in the outer chamber. The incoming gas delivery system and exhaust gas venting system are likewise protected by various methods. Embodiments of the present invention can be used, for example, for high-K gate dielectric anneal, post metallization sintering anneal, and forming gas anneal in the semiconductor manufacturing process.

US Patent:

20130302916, Nov 14, 2013

Filed:

Jul 3, 2013

Appl. No.:

13/935434

Inventors:

- Busan, KR
Manuel Scott Rivera - San Jose CA, US
Suk-Dong Hong - Busan, KR

International Classification:

H01L 21/66

US Classification:

438 5

Abstract:

Novel methods and apparatuses for annealing semiconductor devices in a high pressure gas environment. According to an embodiment, the annealing vessel has a dual chamber structure, and potentially toxic, flammable, or otherwise reactive gas is confined in an inner chamber which is protected by pressures of inert gas contained in the outer chamber. The incoming gas delivery system and exhaust gas venting system are likewise protected by various methods. Embodiments of the present invention can be used, for example, for high-K gate dielectric anneal, post metallization sintering anneal, and forming gas anneal in the semiconductor manufacturing process.

US Patent:

20190220941, Jul 18, 2019

Filed:

Mar 26, 2019

Appl. No.:

16/365165

Inventors:

- San Francisco CA, US
Manuel Antonio Rivera de la Vega - San Francisco CA, US

International Classification:

G06Q 50/22
H04W 4/12

Abstract:

Technology is directed to an interactive text message based coaching program (“the technology”). A user enrolled in a campaign interacts with a server to obtain guidance on performing a set of tasks of the campaign to achieve a health goal. The user interacts with the server via text messages using a mobile computing device. After the health goal of the user is identified, the server generates text messages having information related to the campaign. The text messages are generated based on the health goal for the user, and are customized for the user. The server sends the text messages to the user in a sequence, wherein a next text message of the sequence sent to the user is based on a response received from the user for a previous text message of the sequence.