Khiem B Nguyen

US Patent:

7128806, Oct 31, 2006

Filed:

Oct 21, 2003

Appl. No.:

10/689783

Inventors:

Khiem Nguyen - San Jose CA, US
Peter Satitpunwaycha - Santa Clara CA, US
Alfred W. Mak - Union City CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/306
C23F 1/00

US Classification:

15634551, 118720, 118721

Abstract:

Method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system are provided. In one aspect, an apparatus is provided for supporting a substrate comprising-a cover ring comprising a base having a bore disposed therethough, the base having an upper surface and one or more raised surfaces disposed adjacent the bore, wherein the raised surface comprise one or more first substrate support members disposed adjacent an edge of the bore and a capture ring disposed on the cover ring, the capture ring comprising a semi-circular annular ring having an inner perimeter corresponding to the bore of the cover ring and one or more second substrate support members disposed on the inner perimeter and adapted to receive a substrate, wherein the capture ring is adapted to mate with the cover ring and form one contiguous raised surface on the cover ring.

US Patent:

7601272, Oct 13, 2009

Filed:

Nov 21, 2006

Appl. No.:

11/561995

Inventors:

Khiem K. Nguyen - San Jose CA, US
Richard Lewington - Hayward CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G01L 21/30
B44C 1/22

US Classification:

216 59, 216 60, 216 67

Abstract:

An apparatus for integrating metrology and etch processing is disclosed. The apparatus comprises a multi-chamber system having a transfer chamber, an etch chamber and a metrology chamber, and a robot configured to transfer a substrate between the etch chamber and the metrology chamber. A method of processing a substrate and performing metrology measurement using this apparatus is also disclosed.

US Patent:

7682984, Mar 23, 2010

Filed:

Sep 13, 2006

Appl. No.:

11/531467

Inventors:

Khiem K. Nguyen - San Jose CA, US
Peter Satitpunwaycha - Sunnyvale CA, US
Alfred W. Mak - Union City CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/302

US Classification:

438717, 438706, 438736, 438740, 430323

Abstract:

A photomask etch chamber, which includes a substrate support member disposed inside the chamber. The substrate support member is configured to support a photomask substrate. The chamber further includes a ceiling disposed on the chamber and an endpoint detection system configured to detect a peripheral region of the photomask substrate.

US Patent:

7846848, Dec 7, 2010

Filed:

Sep 15, 2006

Appl. No.:

11/532195

Inventors:

Richard Lewington - Hayward CA, US
Corey Collard - San Jose CA, US
Scott Anderson - Livermore CA, US
Khiem Nguyen - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/302

US Classification:

438723, 438 7, 438706, 438716

Abstract:

The embodiments of the invention relate to a method and apparatus for measuring the etch depth in a semiconductor photomask processing system. In one embodiment, a method for etching a substrate includes etching a transparent substrate in an etch chamber coupled to a vacuum transfer chamber of a processing system, transferring the transparent substrate to a measurement cell coupled to the processing system, and measuring at least one of etch depth or critical dimension using a measurement tool in the measurement cell.

US Patent:

7879151, Feb 1, 2011

Filed:

Sep 11, 2006

Appl. No.:

11/530676

Inventors:

Khiem Nguyen - San Jose CA, US
Peter Satitpunwaycha - Santa Clara CA, US
Alfred W. Mak - Union City CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 16/00
C23C 16/458
H01L 21/306

US Classification:

118729, 118728, 15634551, 15634554

Abstract:

Method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system are provided. In one aspect, an apparatus is provided for supporting a substrate comprising a cover ring comprising a base having a bore disposed therethough, the base having an upper surface and one or more raised surfaces disposed adjacent the bore, wherein the raised surface comprise one or more first substrate support members disposed adjacent an edge of the bore and a capture ring disposed on the cover ring, the capture ring comprising a semi-circular annular ring having an inner perimeter corresponding to the bore of the cover ring and one or more second substrate support members disposed on the inner perimeter and adapted to receive a substrate, wherein the capture ring is adapted to mate with the cover ring and form one contiguous raised surface on the cover ring.

US Patent:

7967930, Jun 28, 2011

Filed:

Oct 30, 2006

Appl. No.:

11/589596

Inventors:

Richard Lewington - Hayward CA, US
Michael N. Grimbergen - Redwood City CA, US
Khiem K. Nguyen - San Jose CA, US
Darin Bivens - San Mateo CA, US
Madhavi R. Chandrachood - Sunnyvale CA, US
Ajay Kumar - Cupertino CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23F 1/00
H01L 21/306
C23C 16/00

US Classification:

156 51, 118723 R

Abstract:

A plasma reactor is provided for processing a workpiece such as a transparent mask or a semiconductor wafer. The reactor includes a vacuum chamber having a ceiling and a sidewall. A workpiece support pedestal within the chamber includes a metal cathode having a support surface facing the ceiling and defining a support plane for supporting a workpiece. The cathode has a hollow space formed within its interior. The reactor further includes a movable metal element within the hollow space and a mechanism for controlling a distance between the metal element and the support plane.

US Patent:

7976671, Jul 12, 2011

Filed:

Oct 30, 2006

Appl. No.:

11/589426

Inventors:

Madhavi R. Chandrachood - Sunnyvale CA, US
Michael N. Grimbergen - Redwood City CA, US
Khiem K. Nguyen - San Jose CA, US
Richard Lewington - Hayward CA, US
Ibrahim M. Ibrahim - Santa Clara CA, US
Sheeba J. Panayil - Santa Clara CA, US
Ajay Kumar - Cupertino CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/3063
C23C 16/505

US Classification:

15634533, 118715, 118723 AN, 118723 ER, 118723 I, 118723 R, 15634529, 15634534, 15634548

Abstract:

A plasma reactor for processing a workpiece such as a mask or wafer includes a vacuum chamber having a cylindrical side wall, a ceiling overlying the side wall and a ring supported on a top edge of the side wall and supporting the ceiling, the ring comprising an external surface and an interior surface. An RF plasma source power applicator and an RF source power generator coupled to the applicator furnish plasma source power. Plural passages extend in a radial direction through the ring from the external surface to the interior surface and are spaced apart along a circumference of the ring. A process gas supply furnishes process gas. An external gas flow conduit apparatus outside of the chamber extends around a circumference of the chamber and is coupled to the process gas supply. Plural external gas flow valves outside of the chamber are coupled to the external conduit at respective locations spaced apart along the conduit, each of the valves having: (a) a controlled gas output port coupled to a respective one of the plural passages at the external surface of the ring and (b) a valve control input. A gas valve configuration controller controls the valve control input of each of the valves.

US Patent:

8002946, Aug 23, 2011

Filed:

Oct 30, 2006

Appl. No.:

11/589337

Inventors:

Richard Lewington - Hayward CA, US
Michael N. Grimbergen - Redwood City CA, US
Khiem K. Nguyen - San Jose CA, US
Darin Bivens - San Mateo CA, US
Madhavi R. Chandrachood - Sunnyvale CA, US
Ajay Kumar - Cupertino CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23F 1/00
H01L 21/306
C23C 16/00

US Classification:

15634551, 118723 R

Abstract:

A plasma reactor for etching a workpiece such as a rectangular or square mask, includes a vacuum chamber having a ceiling and a sidewall and a workpiece support pedestal within the chamber including a cathode having a surface for supporting a workpiece, the surface comprising plural respective zones, the respective zones of the surface being formed of respective materials of different electrical characteristics. The zones can be arranged concentrically relative to an axis of symmetry of the wafer support pedestal.