Julia E Phillips

US Patent:

55387675, Jul 23, 1996

Filed:

Jan 24, 1995

Appl. No.:

8/377546

Inventors:

Robert J. Cava - Bridgewater NJ
Julia M. Phillips - Mountainside NJ
Gordon A. Thomas - Princeton NJ

Assignee:

AT&T Corp. - Murray Hill NJ

International Classification:

C23C 1428

US Classification:

427596

Abstract:

Applicants have discovered that films of conductively doped GaInO. sub. 3 grown on substrates by pulsed laser deposition have conductivity comparable to conventional wide band-gap transparent conductors while exhibiting superior light transmission, particularly in the green and blue wavelength regions of the visible spectrum. Substrate temperatures ranged from room temperature to 350. degree. C. in an ambient containing oxygen at partial pressure in the range 0. 1 mTorr to 100 mTorr. The preferred laser source was an excimer laser operating in the deep ultraviolet.

US Patent:

56520620, Jul 29, 1997

Filed:

Oct 27, 1993

Appl. No.:

8/143813

Inventors:

Robert Joseph Cava - Bridgewater NJ
Julia Mae Phillips - Mountainside NJ
Gordon Albert Thomas - Princeton NJ

Assignee:

Lucent Technologies Inc. - Murray Hill NJ

International Classification:

B32B 1706

US Classification:

428426

Abstract:

Applicants have discovered that films of conductively doped GaInO. sub. 3 grown on substrates by pulsed laser deposition have conductivity comparable to conventional wide band-gap transparent conductors while exhibiting superior light transmission, particularly in the green and blue wavelength regions of the visible spectrum. Substrate temperatures ranged from room temperature to 350. degree. C. in an ambient containing oxygen at partial pressure in the range 0. 1 mTorr to 100 mTorr. The preferred laser source was an excimer laser operating in the deep ultraviolet.

US Patent:

57284210, Mar 17, 1998

Filed:

Aug 23, 1996

Appl. No.:

8/697402

Inventors:

Ernst Michael Gyorgy - Madison NJ
Julia Mae Phillips - Mountainside NJ
Yuri Suzuki - Bridgewater NJ
Robert Bruce van Dover - Maplewood NJ
Suzanne Rachel Gyorgy - Chatham NJ

Assignee:

Lucent Technologies Inc. - Murray Hill NJ

International Classification:

B05D 512
C23C 1640

US Classification:

4271263

Abstract:

Ferrite films having excellent crystalline and magnetic properties are obtainable without high temperature (>500. degree. C. ) processing if an appropriate template layer is deposited on a conventional substrate body (e. g. , SrTiO. sub. 3, cubic zirconia, Si), and the ferrite is deposited on the annealed template. The template is a spinel-structure metal oxide that has a lattice constant in the range 0. 79-0. 89 nm, preferably within about 0. 015 nm of the lattice constant of the ferrite. Exemplarily, a NiFe. sub. 2 O. sub. 4 film was deposited at 400. degree. C. on a CoCr. sub. 2 O. sub. 4 template which had been deposited on (100) SrTiO. sub. 3. The magnetization of the ferrite film at 4000 Oe was more than double the magnetization of a similarly deposited comparison ferrite film (NiFe. sub. 2 O. sub. 4 on SrTiO. sub. 3), and was comparable to that of a NiFe. sub. 2 O. sub.

US Patent:

56289332, May 13, 1997

Filed:

Mar 26, 1996

Appl. No.:

8/622324

Inventors:

Sue A. Carter - Basking Ridge NJ
Robert J. Cava - Bridgewater NJ
Julia M. Phillips - Mountainside NJ
Gordon A. Thomas - Princeton NJ

Assignee:

Lucent Technologies Inc. - Murray Hill NJ

International Classification:

H01B 108
C01G 1500
C01G 902

US Classification:

252518

Abstract:

Applicant has discovered that aliovalently doped zinc-indium-oxide where In is 40-75% of the metal elements can achieve electrical conductivity comparable to wide band-gap semiconductors presently in use while exhibiting enhanced transparency in both the visible and infrared. The material can be doped to resistivity of less than 1 milliohm-cm by small quantifies of aliovalent dopants, such as tetravalent atoms. It can be deposited on glass substrates in amorphous and polycrystalline films.