Donald C Lee

US Patent:

6660988, Dec 9, 2003

Filed:

May 1, 2001

Appl. No.:

09/846726

Inventors:

Donald Lester Lee - Thousand Oaks CA
Haluk Omer Sankur - Ventura CA
William Victor McLevige - Newbury Park CA

Assignee:

Innovative Technology Licensing, LLC - Thousand Oaks CA

International Classification:

H01J 4014

US Classification:

2502081, 250216

Abstract:

A focal plane array has a plurality of detectors for each pixel of the array. The detector having the best operability for each pixel is determined and a custom microlens array is fabricated, with each lens having a focal point directed to the best detector on each pixel. A Multiplexer (MUX) similarly transmits signals from the selected detectors while blocking transmission from the non-selected detectors.

US Patent:

6828713, Dec 7, 2004

Filed:

Jul 30, 2002

Appl. No.:

10/209624

Inventors:

Paul D. Bradley - Mountain View CA
Donald Lee - San Jose CA
Domingo A. Figueredo - Union City CA

Assignee:

Agilent Technologies, Inc - Palo Alto CA

International Classification:

H01L 4108

US Classification:

310324, 310311, 310364, 29 2535, 333187

Abstract:

A thin-film resonator having a seed layer and a method of making the same are disclosed. The resonator is fabricated having a seed layer to assist in the fabrication of high quality piezoelectric layer for the resoantor. The resonator has the seed layer, a bottom electrode, piezoelectric layer, and a top electrode. The seed layer is often the same material as the piezoelectric layer such as Aluminum Nitride (AlN).

US Patent:

7294896, Nov 13, 2007

Filed:

Sep 27, 2005

Appl. No.:

11/237480

Inventors:

Donald L. Lee - Thousand Oaks CA, US

Assignee:

Teledyne Licensing, LLC - Thousand Oaks CA

International Classification:

H01L 31/0232

US Classification:

257432, 257436, 257452, 257461, 257E31064

Abstract:

A photodetector includes a charge carrier collector and a charge carrier concentrator that redirects onto the collector charge carriers that are not initially headed towards the collector.

US Patent:

7368762, May 6, 2008

Filed:

Jan 6, 2005

Appl. No.:

11/031803

Inventors:

William E. Tennant - Thousand Oaks CA, US
Eric C. Piquette - Camarillo CA, US
Donald L. Lee - Thousand Oaks CA, US
Mason L. Thomas - Moorpark CA, US
Majid Zandian - Calabasas CA, US

Assignee:

Teledyne Licensing, LLC - Thousand Oaks CA

International Classification:

H01L 31/00

US Classification:

257184, 257186, 257188, 257189, 257199, 257481, 257485, 257E31054, 257E31065, 257E31067

Abstract:

The present invention provides a heterojunction photodiode which includes a pn or Schottky-barrier junction formed in a first material region having a bandgap energy E. When reverse-biased, the junction creates a depletion region which expands towards a second material region having a bandgap energy Ewhich is less than E. This facilitates signal photocurrent generated in the second region to flow efficiently through the junction in the first region while minimizing the process-related dark currents and associated noise due to near junction defects and imperfect surfaces which typically reduce photodiode device performance. The heterojunction photodiode can be included in an imaging system which includes an array of junctions to form an imager.

US Patent:

7491920, Feb 17, 2009

Filed:

Feb 2, 2006

Appl. No.:

11/347536

Inventors:

Donald L. Lee - Thousand Oaks CA, US
William E. Tennant - Thousand Oaks CA, US

Assignee:

Teledyne Scientific & Imaging, LLC - Thousand Oaks CA

International Classification:

H01L 27/00
H04N 9/64

US Classification:

2502081, 348246

Abstract:

A cost-effective FPA includes a plurality of detectors per pixel, wherein radiation is directed by a microlens array into respective focal regions that are covered by the union of the detectors' collections regions within each pixel and any defective detectors are de-selected in the ROIC. The operability of each pixel is evaluated, and a map generated specifying detector de-selection for each pixel. This map is read into memory in the ROIC to de-select bad detectors. Bad detectors are preferably allowed to float to a photovoltage and re-emit some of their accumulated photo charge to neighboring detectors to improve collection efficiency. The radiation levels are preferably read out on a pixel-by-pixel basis. Accordingly, the signals from the selected detectors are combined within each pixel.

US Patent:

8436516, May 7, 2013

Filed:

Feb 24, 2012

Appl. No.:

13/404095

Inventors:

Richard C. Ruby - Menlo Park CA, US
Wei Pang - Fort Collins CO, US
Qiang Zou - Fort Collins CO, US
Donald Lee - Fort Collins CO, US

Assignee:

Avago Technologies General IP (Singapore) Pte. Ltd. - Singapore

International Classification:

H01L 41/08

US Classification:

310346, 310320, 310324

Abstract:

An acoustic resonator device includes a composite first electrode on a substrate, a piezoelectric layer on the composite electrode, and a second electrode on the piezoelectric layer. The first electrode includes a buried temperature compensating layer having a positive temperature coefficient. The piezoelectric layer has a negative temperature coefficient, and thus the positive temperature coefficient of the temperature compensating layer offsets at least a portion of the negative temperature coefficient of the piezoelectric layer.

US Patent:

20110266925, Nov 3, 2011

Filed:

Apr 29, 2010

Appl. No.:

12/769791

Inventors:

Richard C. RUBY - Menlo Park CA, US
Wei PANG - Fort Collins CO, US
Qiang ZOU - Fort Collins CO, US
Donald LEE - Fort Collins CO, US

Assignee:

Avago Technologies Wireless IP (Singapore) Pte. Ltd. - Singapore

International Classification:

H01L 41/04

US Classification:

310346

Abstract:

An acoustic resonator device includes a composite first electrode on a substrate, a piezoelectric layer on the composite electrode, and a second electrode on the piezoelectric layer. The first electrode includes a buried temperature compensating layer having a positive temperature coefficient. The piezoelectric layer has a negative temperature coefficient, and thus the positive temperature coefficient of the temperature compensating layer offsets at least a portion of the negative temperature coefficient of the piezoelectric layer.

US Patent:

54736390, Dec 5, 1995

Filed:

Jul 26, 1993

Appl. No.:

8/097688

Inventors:

Donald M. Lee - San Jose CA
Benny W. H. Lai - San Jose CA

Assignee:

Hewlett-Packard Company - Palo Alto CA

International Classification:

H04L 7033

US Classification:

375376

Abstract:

An out of lock condition is sensed on a data transition by transition basis in clock recovery apparatus. When an out of lock condition is sensed, a range sweeping signal is generated and summed with the correction signal to sweep the frequency of the clock signal over the frequency range of the VCO. When an out of lock condition is absent, i. e. , when the VCO is phase locked, simulated data transitions are generated in the frequency/phase detector. An out of lock condition is sensed by a D flip-flop. Data is coupled to the clock input of the flip-flop, the clock signal is delayed by a fraction of its nominal period and coupled to the D input of the flip-flop. The state of the Q output of the flip-flop indicates an out of lock condition.