Bruce Elliot Scott

US Patent:

6479847, Nov 12, 2002

Filed:

May 7, 1999

Appl. No.:

09/306509

Inventors:

James A. Misewich - Peakskill NY
Alejandro G. Schrott - New York NY
Bruce A. Scott - Pleasantville NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2975

US Classification:

257295, 257410, 438 3

Abstract:

A method of manufacturing an integrated circuit device includes forming a laminated structure having a first side and a second side, the first side includes a first type Mott channel layer and the second side includes a second type Mott channel layer. A first source region and a first drain region is formed on the first side, a second source region and a second drain region is formed on the second side, a first gate region is formed on the second side, opposite the first source region and the first drain region and a second gate region is formed on the first side, opposite the second source region and the second drain region. The first source, the first drain and the first gate comprise a first type field effect transistor and the second source, the second drain and the second gate comprise a second type field effect transistor.

US Patent:

6555393, Apr 29, 2003

Filed:

Aug 24, 2001

Appl. No.:

09/938392

Inventors:

Alejandro G. Schrott - New York NY
James A. Misewich - Peakskill NY
Bruce A. Scott - Pleasantville NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2100

US Classification:

438 2

Abstract:

A structure and method of forming an integrated circuit (e. g. , field effect transistor) having a buried Mott-insulated oxide channel includes depositing source and drain electrodes over a substrate forming a Mott transition channel layer over the substrate and electrodes, forming an insulator layer over the Mott transition channel layer, forming source and drain contacts through the insulator layer (such that the source and drain contacts are electrically connected to the Mott transition channel layer) and forming a gate electrode over the insulator layer between the source and drain contacts.

US Patent:

63335433, Dec 25, 2001

Filed:

Mar 16, 1999

Appl. No.:

9/268633

Inventors:

Alejandro G. Schrott - New York NY
James A. Misewich - Peakskill NY
Bruce A. Scott - Pleasantville NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 1912
H01L 31119
H01L 31062
H01L 2976
H01L 2994
H01L 31113

US Classification:

257410

Abstract:

A structure and method of forming an integrated circuit (e. g. , field effect transistor) having a buried Mott-insulated oxide channel includes depositing source and drain electrodes over a substrate forming a Mott transition channel layer over the substrate and electrodes, forming an insulator layer over the Mott transition channel layer, forming source and drain contacts through the insulator layer (such that the source and drain contacts are electrically connected to the Mott transition channel layer) and forming a gate electrode over the insulator layer between the source and drain contacts.

US Patent:

48043494, Feb 14, 1989

Filed:

Jul 31, 1987

Appl. No.:

6/080043

Inventors:

Dominick Loscalzo - Whitestone NY
Bruce M. Scott - Fort Salonga NY
Lawrence O. Freese - Providence RI
Augusto A. Picozza - Johnston RI

Assignee:

Dart Industries, Inc. - Deerfield IL

International Classification:

A63H 1700
A63H 352

US Classification:

446 93

Abstract:

A reconfigurable toy simulates a school bus when assembled in a first configuration. In a second configuration the constituent components of the toy bus may be selectively arranged to simulate a schoolroom enclosure having figurines and simulated school desks positioned therewithin. The components of the toy include a vehicle chassis, on which side wall panels and roof panels are supported. The side wall panels and roof panels may be placed on edge on a flat floor surface to simulate the walls of a schoolroom. Rounded projections formed on upper edges of the side wall panels cooperate with recesses formed in the roof panels thereby serving to facilitate ready alignment of the roof panels on the side wall panels when the toy is assembled in the school bus configuration.