Anh Thi Duong

US Patent:

6911411, Jun 28, 2005

Filed:

Nov 21, 2002

Appl. No.:

10/301131

Inventors:

Philip Cox - San Jose CA, US
Ngan Tran - San Jose CA, US
Anh Duong - San Francisco CA, US

Assignee:

Polyfuel, Inc. - Mountain View CA

International Classification:

B01J031/00

US Classification:

502159, 429 40, 502101, 296231

Abstract:

A method of preparing catalyst agglomerates for electrochemical devices is provided. The method comprises dispersing particles of a catalyst in a non-aqueous solvent to form a dispersion of the catalyst, adding an ion conducting polymer in a dilute solution to the dispersion of the catalyst under agitation to form catalyst agglomerates, and stirring the dispersion of the catalyst and the catalyst agglomerates to control the growth of the agglomerates. A directly applicable catalyst composition is also provided. The catalyst composition comprises the catalyst agglomerates prepared according to the present invention, a solvent to plasticize surfaces of the catalyst agglomerates and the membrane, and a non-aqueous carrier solvent.

US Patent:

7879710, Feb 1, 2011

Filed:

Dec 29, 2006

Appl. No.:

11/647882

Inventors:

Zachary Fresco - San Jose CA, US
Chi-I Lang - San Jose CA, US
Sandra G. Malhotra - San Jose CA, US
Tony P. Chiang - San Jose CA, US
Thomas R. Boussie - Menlo Park CA, US
Nitin Kumar - San Jose CA, US
Jinhong Tong - San Jose CA, US
Anh Duong - San Jose CA, US

Assignee:

Intermolecular, Inc. - San Jose CA

International Classification:

H01L 21/44

US Classification:

438597, 438622, 438624, 438761, 438763, 257E2126, 257E21265

Abstract:

Methods for substrate processing are described. The methods include forming a material layer on a substrate. The methods include selecting constituents of a molecular masking layer (MML) to remove an effect of variations in the material layer as a result of substrate processing. The methods include normalizing the surface characteristics of the material layer by selectively depositing the MML on the material layer.

US Patent:

7884036, Feb 8, 2011

Filed:

Jul 12, 2007

Appl. No.:

11/777152

Inventors:

Jinhong Tong - Santa Clara CA, US
Anh Duong - Union City CA, US
Chi-I Lang - Cupertino CA, US
Sandra Malhotra - San Jose CA, US
Tony Chiang - Campbell CA, US

Assignee:

Intermolecular, Inc. - San Jose CA

International Classification:

H01L 21/00

US Classification:

438798, 438597, 438758, 438795, 257E21001

Abstract:

Methods for treating a substrate in preparation for a subsequent process are presented, the method including: receiving the substrate, the substrate comprising conductive regions and dielectric regions; and applying an oxidizing agent to the substrate in a manner so that the dielectric regions are oxidized to become increasingly hydrophilic to enable access to the conductive regions in the subsequent process, wherein the dielectric region is treated to a depth in the range of approximately 1 to 5 atomic layers. In some embodiments, methods further include processing the substrate, wherein processing the conductive regions are selectively enhanced. In some embodiments, the oxidizing agent includes atmospheric pressure plasma and UV radiation.

US Patent:

7919446, Apr 5, 2011

Filed:

Dec 26, 2008

Appl. No.:

12/344410

Inventors:

Zachary M. Fresco - Santa Clara CA, US
Anh Duong - Union City CA, US
Chi-I Lang - Sunnyvale CA, US
Nikhil Kalyankar - San Jose CA, US
Nicole Rutherford - Saratoga CA, US
Alexander Gorer - Los Gatos CA, US

Assignee:

Intermolecular, Inc. - San Jose CA

International Classification:

C11D 3/30
C11D 1/42
C11D 1/62

US Classification:

510175, 510176, 510432, 510504, 134 13, 134 2213, 134 2214

Abstract:

Compositions comprise a purine compound; an alcohol amine; a quaternary ammonium salt; an amino acid, and optionally an antioxidant. The compositions are useful in post-CMP cleaning processes. One particular advantage of these compositions is that they can effectively remove slurry contamination without increasing the roughness of the copper surface.

US Patent:

8076240, Dec 13, 2011

Filed:

Nov 10, 2008

Appl. No.:

12/268387

Inventors:

Anh Ngoc Duong - Union City CA, US

Assignee:

Intermolecular, Inc. - San Jose CA

International Classification:

H01L 21/44

US Classification:

438678, 438689, 438745, 438761, 438765, 438769, 257E21295

Abstract:

Techniques to improve characteristics of processed semiconductor substrates are described, including cleaning a substrate using a preclean process, the substrate comprising a dielectric region and a conductive region, introducing a hydroquinone to the substrate after cleaning the substrate using the preclean operation, and forming a capping layer over the conductive region of the substrate after introducing the hydroquinone.

US Patent:

8252685, Aug 28, 2012

Filed:

Nov 4, 2011

Appl. No.:

13/289279

Inventors:

Anh Ngoc Duong - Fremont CA, US
Chi-I Lang - Cupertino CA, US

Assignee:

Intermolecular, Inc. - San Jose CA

International Classification:

H01L 21/44

US Classification:

438678, 438689, 438745, 438761, 438765, 438769, 257E21029

Abstract:

Techniques to improve characteristics of processed semiconductor substrates are described, including cleaning a substrate using a preclean process, the substrate comprising a dielectric region and a conductive region, introducing a hydroquinone to the substrate after cleaning the substrate using the preclean operation, and forming a capping layer over the conductive region of the substrate after introducing the hydroquinone.

US Patent:

8426970, Apr 23, 2013

Filed:

Dec 28, 2010

Appl. No.:

12/979627

Inventors:

Zachary Fresco - San Jose CA, US
Chi-I Lang - Cupertino CA, US
Sandra G. Malhotra - San Jose CA, US
Tony P. Chiang - Campbell CA, US
Thomas R. Boussie - Menlo Park CA, US
Nitin Kumar - Fremont CA, US
Jinhong Tong - Santa Clara CA, US
Anh Duong - Union City CA, US

Assignee:

Intermolecular, Inc. - San Jose CA

International Classification:

H01L 23/52
H01L 23/532

US Classification:

257760, 257759, 257E23142, 257E23167, 438624

Abstract:

Methods for substrate processing are described. The methods include forming a material layer on a substrate. The methods include selecting constituents of a molecular masking layer (MML) to remove an effect of variations in the material layer as a result of substrate processing. The methods include normalizing the surface characteristics of the material layer by selectively depositing the MML on the material layer.

US Patent:

8449681, May 28, 2013

Filed:

Dec 16, 2010

Appl. No.:

12/970421

Inventors:

Anh Duong - Fremont CA, US
Indranil De - Mountain View CA, US

Assignee:

Intermolecular, Inc. - San Jose CA

International Classification:

C11D 7/50
C11D 11/00

US Classification:

134 13, 510175, 510176

Abstract:

A composition for removing photoresist and bottom anti-reflective coating from a semiconductor substrate is disclosed. The composition may comprise a nontoxic solvent, the nontoxic solvent having a flash point above 80 degrees Celsius and being capable of dissolving acrylic polymer and phenolic polymer. The composition may further comprise Tetramethylammonium Hydroxide (TMAH) mixed with the nontoxic solvent.